JPS57133626A - Manufacture of semiconductor thin film - Google Patents

Manufacture of semiconductor thin film

Info

Publication number
JPS57133626A
JPS57133626A JP1901081A JP1901081A JPS57133626A JP S57133626 A JPS57133626 A JP S57133626A JP 1901081 A JP1901081 A JP 1901081A JP 1901081 A JP1901081 A JP 1901081A JP S57133626 A JPS57133626 A JP S57133626A
Authority
JP
Japan
Prior art keywords
ion
implanted
irradiated
film
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1901081A
Other languages
Japanese (ja)
Inventor
Kazumichi Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1901081A priority Critical patent/JPS57133626A/en
Publication of JPS57133626A publication Critical patent/JPS57133626A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To perform uniform annealing for the subject semiconductor film even when there is a difference in doping by a method wherein, when a film having an excellent carrier mobility by having crystal grain increased in size, beams of light having high energy density such as electron and laser beams are irradiated. CONSTITUTION:A thick SiO2 film is grown on the surface of a single crystal Si substrate by performing wet oxidation, and a thin polycrystalline Si layer is deposited on the SiO2 film. Then, the above is divided into square-shaped islands by etching, and using an ion implantation mask, a B-ion is implanted on every other island and a P-ion is implanted on the every other island which are pinched between the B-ion implanted islands, the ion implantation mask is removed, an electron beam is irradiated and then the Ar laser of high energy density beam is irradiated. Through these procedures, the average diameter of the crystal grain is increased to 8mum or thereabouts for both B and P ion implanted sections, and the MOS transistor with N and P channels are formed on the abovementioned thin films.
JP1901081A 1981-02-13 1981-02-13 Manufacture of semiconductor thin film Pending JPS57133626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1901081A JPS57133626A (en) 1981-02-13 1981-02-13 Manufacture of semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1901081A JPS57133626A (en) 1981-02-13 1981-02-13 Manufacture of semiconductor thin film

Publications (1)

Publication Number Publication Date
JPS57133626A true JPS57133626A (en) 1982-08-18

Family

ID=11987527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1901081A Pending JPS57133626A (en) 1981-02-13 1981-02-13 Manufacture of semiconductor thin film

Country Status (1)

Country Link
JP (1) JPS57133626A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175116A (en) * 1983-03-24 1984-10-03 Agency Of Ind Science & Technol Manufacture of single crystal semiconductor thin film
JPS59178719A (en) * 1983-03-30 1984-10-11 Agency Of Ind Science & Technol Electron beam annealing method and the apparatus therefor
JPS60245124A (en) * 1984-05-18 1985-12-04 Sony Corp Manufacture of semiconductor device
JPH01160037A (en) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175116A (en) * 1983-03-24 1984-10-03 Agency Of Ind Science & Technol Manufacture of single crystal semiconductor thin film
JPH0449250B2 (en) * 1983-03-24 1992-08-11 Kogyo Gijutsuin
JPS59178719A (en) * 1983-03-30 1984-10-11 Agency Of Ind Science & Technol Electron beam annealing method and the apparatus therefor
JPH0136970B2 (en) * 1983-03-30 1989-08-03 Kogyo Gijutsuin
JPS60245124A (en) * 1984-05-18 1985-12-04 Sony Corp Manufacture of semiconductor device
JPH01160037A (en) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JP2558765B2 (en) * 1987-12-17 1996-11-27 松下電器産業株式会社 Method for manufacturing semiconductor device

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