JPS5681973A - Manufacture of mos type semiconductor device - Google Patents
Manufacture of mos type semiconductor deviceInfo
- Publication number
- JPS5681973A JPS5681973A JP15834179A JP15834179A JPS5681973A JP S5681973 A JPS5681973 A JP S5681973A JP 15834179 A JP15834179 A JP 15834179A JP 15834179 A JP15834179 A JP 15834179A JP S5681973 A JPS5681973 A JP S5681973A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mos transistor
- subsequently
- insular
- sio2 film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- -1 phosphorus ions Chemical class 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To compensate the deterioration in the characteristics of an MOS transistor due to the crystal defect by irradiating beforehand energy beam in parallel with the longitudinal channel direction of the transistor in the semiconductor layer when providing the MOS transistor in the semiconductor layer formed on an insulating substrate. CONSTITUTION:An n<-> type monocrystalline Si layer 2 is epitaxially grown on a sapphire substrate 1, is etched to form the layer in an insular state. Subsequently, phosphorus ions are implanted to the insular layer 2 to the extent of dosage of 5X 10<11>cm<-2>, and subsequently Nd: YAG laser beam is scanned and irradiated thereto along the channel longitudinal direction of the MOS transistor formed later with energy density of 500mJ/cm. Thereafter, a gate electrode 4 is formed through a gate SiO2 film 3 at the center on the surface of the layer 2, and with the electrode as a mask, n<+> type source and drain regions 5 and 6 are diffused in self-matching manner. Then, an SiO2 film 7 is accumulated in an ordinalry manner, a window is opened thereat, and aluminum electrodes 8, 9 are mounted thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15834179A JPS5681973A (en) | 1979-12-06 | 1979-12-06 | Manufacture of mos type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15834179A JPS5681973A (en) | 1979-12-06 | 1979-12-06 | Manufacture of mos type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5681973A true JPS5681973A (en) | 1981-07-04 |
Family
ID=15669515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15834179A Pending JPS5681973A (en) | 1979-12-06 | 1979-12-06 | Manufacture of mos type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5681973A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS595624A (en) * | 1982-07-01 | 1984-01-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| US6544825B1 (en) | 1992-12-26 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
| US6835607B2 (en) | 1993-10-01 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
| US8835271B2 (en) | 2002-04-09 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US9105727B2 (en) | 2002-04-09 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US10133139B2 (en) | 2002-05-17 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
-
1979
- 1979-12-06 JP JP15834179A patent/JPS5681973A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS595624A (en) * | 1982-07-01 | 1984-01-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| US6544825B1 (en) | 1992-12-26 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
| US7351615B2 (en) | 1992-12-26 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
| US6835607B2 (en) | 1993-10-01 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
| US7170138B2 (en) | 1993-10-01 | 2007-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7301209B2 (en) | 1993-10-01 | 2007-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9406806B2 (en) | 2002-04-09 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US9105727B2 (en) | 2002-04-09 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US8835271B2 (en) | 2002-04-09 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US9666614B2 (en) | 2002-04-09 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US10050065B2 (en) | 2002-04-09 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US10083995B2 (en) | 2002-04-09 | 2018-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US10700106B2 (en) | 2002-04-09 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US10854642B2 (en) | 2002-04-09 | 2020-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
| US11101299B2 (en) | 2002-04-09 | 2021-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
| US10133139B2 (en) | 2002-05-17 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US10527903B2 (en) | 2002-05-17 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US11422423B2 (en) | 2002-05-17 | 2022-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
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