JPS57104218A - Fabrication of semiconductor device - Google Patents
Fabrication of semiconductor deviceInfo
- Publication number
- JPS57104218A JPS57104218A JP18113380A JP18113380A JPS57104218A JP S57104218 A JPS57104218 A JP S57104218A JP 18113380 A JP18113380 A JP 18113380A JP 18113380 A JP18113380 A JP 18113380A JP S57104218 A JPS57104218 A JP S57104218A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- contamination
- irradiating
- light
- field oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000011109 contamination Methods 0.000 abstract 3
- 238000005468 ion implantation Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
PURPOSE:To remove effectively contamination of the surface of a semiconductor substrate accruing from ion implantation by irradiating a light or electron beam onto a semiconductor substrate after ion implantation. CONSTITUTION:A semiconductor substrate 10 in which N-conduction type source and drain regions 3 and 3 are formed by implanting ions into a P-conduction type silicon substrate 1 through a field oxide layer 4, a gate electrode 5 and a window opened in the field oxide layer 4 is covered, with implantation of ions, by a contamination layer 7, affecting a characteristic of the device. Therefore, the contamination layer 7 can be removed by irradiating a laser beam 6 of, for example, an Nd:YAG laser. The similar effect can be also achieved by using the second harmonic wave of an Nd:YAG laser or light from a high-luminance flash lamp.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18113380A JPS57104218A (en) | 1980-12-19 | 1980-12-19 | Fabrication of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18113380A JPS57104218A (en) | 1980-12-19 | 1980-12-19 | Fabrication of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57104218A true JPS57104218A (en) | 1982-06-29 |
Family
ID=16095447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18113380A Pending JPS57104218A (en) | 1980-12-19 | 1980-12-19 | Fabrication of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57104218A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5492862A (en) * | 1993-01-12 | 1996-02-20 | Tokyo Electron Limited | Vacuum change neutralization method |
US6092299A (en) * | 1997-09-05 | 2000-07-25 | Tokyo Electron Limited | Vacuum processing apparatus |
US6207006B1 (en) | 1997-09-18 | 2001-03-27 | Tokyo Electron Limited | Vacuum processing apparatus |
US6544825B1 (en) | 1992-12-26 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
US6835607B2 (en) | 1993-10-01 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
US8835271B2 (en) | 2002-04-09 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US9105727B2 (en) | 2002-04-09 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US10133139B2 (en) | 2002-05-17 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
-
1980
- 1980-12-19 JP JP18113380A patent/JPS57104218A/en active Pending
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6544825B1 (en) | 1992-12-26 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
US7351615B2 (en) | 1992-12-26 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
US5492862A (en) * | 1993-01-12 | 1996-02-20 | Tokyo Electron Limited | Vacuum change neutralization method |
US6835607B2 (en) | 1993-10-01 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
US7170138B2 (en) | 1993-10-01 | 2007-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7301209B2 (en) | 1993-10-01 | 2007-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6092299A (en) * | 1997-09-05 | 2000-07-25 | Tokyo Electron Limited | Vacuum processing apparatus |
US6207006B1 (en) | 1997-09-18 | 2001-03-27 | Tokyo Electron Limited | Vacuum processing apparatus |
US9406806B2 (en) | 2002-04-09 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US9105727B2 (en) | 2002-04-09 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US8835271B2 (en) | 2002-04-09 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US9666614B2 (en) | 2002-04-09 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US10050065B2 (en) | 2002-04-09 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US10083995B2 (en) | 2002-04-09 | 2018-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US10700106B2 (en) | 2002-04-09 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US10854642B2 (en) | 2002-04-09 | 2020-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US11101299B2 (en) | 2002-04-09 | 2021-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US10133139B2 (en) | 2002-05-17 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US10527903B2 (en) | 2002-05-17 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US11422423B2 (en) | 2002-05-17 | 2022-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
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