JPS5762528A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5762528A JPS5762528A JP13576680A JP13576680A JPS5762528A JP S5762528 A JPS5762528 A JP S5762528A JP 13576680 A JP13576680 A JP 13576680A JP 13576680 A JP13576680 A JP 13576680A JP S5762528 A JPS5762528 A JP S5762528A
- Authority
- JP
- Japan
- Prior art keywords
- laser beams
- silicon substrate
- onto
- annealed
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To prevent the generation of a lattice defect due to the irradiation of laser beams onto a boundary surface, etc. of an oxide film and a silicon substrate when a diffusion region formed by implanting impurity ions onto the silicon substrate is annealed by the laser beams. CONSTITUTION:When the diffusion regions 15 are formed to the silicon substrate 11 through the implantation of impurity ions, a mask 16 consisting of glass 17 and chrome films 18 and the like is arranged onto the regions and the laser beams are irradiated from an upper section of the figure, the diffusion regions 15 are subject to the irradiation of the laser beams and annealed, but the field oxide films 14 and the boundary surface of the gate oxide film 12 and the silicon substrate 11 are not irradiated because the laser beams are shielded by the chrome 18, and the generation of damage such as the lattice defect is prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13576680A JPS5762528A (en) | 1980-10-01 | 1980-10-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13576680A JPS5762528A (en) | 1980-10-01 | 1980-10-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5762528A true JPS5762528A (en) | 1982-04-15 |
Family
ID=15159357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13576680A Pending JPS5762528A (en) | 1980-10-01 | 1980-10-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5762528A (en) |
-
1980
- 1980-10-01 JP JP13576680A patent/JPS5762528A/en active Pending
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