JPS57180173A - Mis transistor and manufacture thereof - Google Patents
Mis transistor and manufacture thereofInfo
- Publication number
- JPS57180173A JPS57180173A JP6553981A JP6553981A JPS57180173A JP S57180173 A JPS57180173 A JP S57180173A JP 6553981 A JP6553981 A JP 6553981A JP 6553981 A JP6553981 A JP 6553981A JP S57180173 A JPS57180173 A JP S57180173A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- ion
- laser
- gate
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005224 laser annealing Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To improve the performance of MOSFET by a method wherein the poly Si gate, the source and the drain are separately annealed using laser under the respective optimum conditions. CONSTITUTION:The field oxide film 2', the gate oxide film 2'' and the P<+> channel cut P'' are provided on the P type Si substrate and the surface is covered with the poly Si 3' and implanted with the B<+> ion to control the threshold level. Next after annealing the surface with the rectangular laser beam L, the poly Si gate electrode 3 is formed by means of patterning while the exposed substrate is covered with the SiO2 2. Then the surface is implanted with the P<+> ion and further radiated by the laser pulse to activate the P<+> ion in the n<+> source, the drain and the poly Si gate. The characteristics of the gate electrode 3 are subject to no change after the two times radiation, because each laser annealing is selectively performed meeting the optimum requirements in terms of respective wavelength, output, waveform and the like. The beams of ion, electron or the like in addn. to laser may be effective.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6553981A JPS57180173A (en) | 1981-04-30 | 1981-04-30 | Mis transistor and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6553981A JPS57180173A (en) | 1981-04-30 | 1981-04-30 | Mis transistor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57180173A true JPS57180173A (en) | 1982-11-06 |
Family
ID=13289915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6553981A Pending JPS57180173A (en) | 1981-04-30 | 1981-04-30 | Mis transistor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57180173A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6274885B1 (en) | 1994-12-16 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device with TFTs of different refractive index |
| US6808974B2 (en) | 2001-05-15 | 2004-10-26 | International Business Machines Corporation | CMOS structure with maximized polysilicon gate activation and a method for selectively maximizing doping activation in gate, extension, and source/drain regions |
-
1981
- 1981-04-30 JP JP6553981A patent/JPS57180173A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6274885B1 (en) | 1994-12-16 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device with TFTs of different refractive index |
| KR100393949B1 (en) * | 1994-12-16 | 2003-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and active matrix display device |
| US6808974B2 (en) | 2001-05-15 | 2004-10-26 | International Business Machines Corporation | CMOS structure with maximized polysilicon gate activation and a method for selectively maximizing doping activation in gate, extension, and source/drain regions |
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