JPS57136368A - Manufacture of mis transistor - Google Patents
Manufacture of mis transistorInfo
- Publication number
- JPS57136368A JPS57136368A JP2200481A JP2200481A JPS57136368A JP S57136368 A JPS57136368 A JP S57136368A JP 2200481 A JP2200481 A JP 2200481A JP 2200481 A JP2200481 A JP 2200481A JP S57136368 A JPS57136368 A JP S57136368A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- drain regions
- regions
- junction
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000005468 ion implantation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000006378 damage Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To prevent destructuion of junction of an MIS transistor by a method wherein energy rays are irradiated selectively on a part of shallow source and drain regions formed by ion implantation in a semiconductor substrate to form deep regions. CONSTITUTION:Field oxide films 2 and a gate oxide film 4 are formed on a P type Si substrate 1, and after the shallow source and drain regions 6 are formed by As ion implantation using a polycrystalline Si gate electrode 5' as the mask, a PSG film 8 and an Al layer 9 are laminated in order, openings are formed at a part of the source and drain regions, and the energy rays of laser beam, etc., are irradiated to make As in the opening parts to be diffused deeply to form the regions 10. Then after the Al layer 9 is removed, the PSG film 8 is heat treated to make it to reflow and form electrodes at the opening parts. Accordingly destruction of junction is prevented, and efficiency of manufacture and yield of manufacture of the high integrated MISIC are enhanced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2200481A JPS57136368A (en) | 1981-02-17 | 1981-02-17 | Manufacture of mis transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2200481A JPS57136368A (en) | 1981-02-17 | 1981-02-17 | Manufacture of mis transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57136368A true JPS57136368A (en) | 1982-08-23 |
Family
ID=12070854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2200481A Pending JPS57136368A (en) | 1981-02-17 | 1981-02-17 | Manufacture of mis transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57136368A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528434A (en) * | 1978-08-21 | 1980-02-29 | Showa Denko Kk | Tunnel kiln |
| JPS5615035A (en) * | 1979-07-17 | 1981-02-13 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
-
1981
- 1981-02-17 JP JP2200481A patent/JPS57136368A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528434A (en) * | 1978-08-21 | 1980-02-29 | Showa Denko Kk | Tunnel kiln |
| JPS5615035A (en) * | 1979-07-17 | 1981-02-13 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
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