JPS5615035A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5615035A JPS5615035A JP8991779A JP8991779A JPS5615035A JP S5615035 A JPS5615035 A JP S5615035A JP 8991779 A JP8991779 A JP 8991779A JP 8991779 A JP8991779 A JP 8991779A JP S5615035 A JPS5615035 A JP S5615035A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- layer
- junction
- laser light
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To readily form a deep P-N junction at a part of a shallow P-N junction for short time in a semiconductor device by irradiating a laser light to the limited region of an impurity doped layer on the surface of a semiconductor substrate to deeply diffuse it in the limited region. CONSTITUTION:An impurity doped layer is fromed on the surface of a P-type Si substrate 1, and laser light 3 is irradiated thereto to from an N-type Si layer 4. After forming a mask thereon, a laser light 7 is irradiated to deeply diffuse only the portion of the N-type Si layer 4 exposed with an opening 5 of the mask 6 to form a deep P-N junction 8. Then, electrode metal is evaporated in the state that the mask 6 is carried thereon, the mask 6 is then removed to form an electrode metal layer 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8991779A JPS5615035A (en) | 1979-07-17 | 1979-07-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8991779A JPS5615035A (en) | 1979-07-17 | 1979-07-17 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5615035A true JPS5615035A (en) | 1981-02-13 |
JPS633447B2 JPS633447B2 (en) | 1988-01-23 |
Family
ID=13984051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8991779A Granted JPS5615035A (en) | 1979-07-17 | 1979-07-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5615035A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57136368A (en) * | 1981-02-17 | 1982-08-23 | Fujitsu Ltd | Manufacture of mis transistor |
JPS57138157A (en) * | 1981-02-20 | 1982-08-26 | Fujitsu Ltd | Manufacture of semiconductor device |
US4542580A (en) * | 1983-02-14 | 1985-09-24 | Prime Computer, Inc. | Method of fabricating n-type silicon regions and associated contacts |
JP2011512041A (en) * | 2008-04-17 | 2011-04-14 | エルジー エレクトロニクス インコーポレイティド | Solar cell, method for forming emitter layer of solar cell, and method for manufacturing solar cell |
CN102447004A (en) * | 2010-09-30 | 2012-05-09 | Snt能源技术有限公司 | Mask, method and apparatus for forming selective emitter of solar cell |
JP2014072474A (en) * | 2012-10-01 | 2014-04-21 | Sharp Corp | Method of manufacturing photoelectric conversion element and photoelectric conversion element |
JP2015515747A (en) * | 2012-03-14 | 2015-05-28 | アイメック・ヴェーゼットウェーImec Vzw | Method for manufacturing a solar cell having plated contacts |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4926456A (en) * | 1972-07-11 | 1974-03-08 |
-
1979
- 1979-07-17 JP JP8991779A patent/JPS5615035A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4926456A (en) * | 1972-07-11 | 1974-03-08 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57136368A (en) * | 1981-02-17 | 1982-08-23 | Fujitsu Ltd | Manufacture of mis transistor |
JPS57138157A (en) * | 1981-02-20 | 1982-08-26 | Fujitsu Ltd | Manufacture of semiconductor device |
US4542580A (en) * | 1983-02-14 | 1985-09-24 | Prime Computer, Inc. | Method of fabricating n-type silicon regions and associated contacts |
JP2011512041A (en) * | 2008-04-17 | 2011-04-14 | エルジー エレクトロニクス インコーポレイティド | Solar cell, method for forming emitter layer of solar cell, and method for manufacturing solar cell |
US8513754B2 (en) | 2008-04-17 | 2013-08-20 | Lg Electronics Inc. | Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell |
CN102447004A (en) * | 2010-09-30 | 2012-05-09 | Snt能源技术有限公司 | Mask, method and apparatus for forming selective emitter of solar cell |
JP2015515747A (en) * | 2012-03-14 | 2015-05-28 | アイメック・ヴェーゼットウェーImec Vzw | Method for manufacturing a solar cell having plated contacts |
JP2014072474A (en) * | 2012-10-01 | 2014-04-21 | Sharp Corp | Method of manufacturing photoelectric conversion element and photoelectric conversion element |
Also Published As
Publication number | Publication date |
---|---|
JPS633447B2 (en) | 1988-01-23 |
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