JPS5550629A - Manufacture of mesa-type semiconductor device - Google Patents

Manufacture of mesa-type semiconductor device

Info

Publication number
JPS5550629A
JPS5550629A JP12384078A JP12384078A JPS5550629A JP S5550629 A JPS5550629 A JP S5550629A JP 12384078 A JP12384078 A JP 12384078A JP 12384078 A JP12384078 A JP 12384078A JP S5550629 A JPS5550629 A JP S5550629A
Authority
JP
Japan
Prior art keywords
substrate
glass films
mask
film
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12384078A
Other languages
Japanese (ja)
Inventor
Yoshimi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP12384078A priority Critical patent/JPS5550629A/en
Publication of JPS5550629A publication Critical patent/JPS5550629A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To accomplish highly accurate opening of holes and forming of electrodes by preventing the swell of a glass film over an insnlating film of a substrate in forming the glass films on the mesa grooves of the substrate by the eletro-cataphoresis method.
CONSTITUTION: A p-layer 7 is placed on an n-type Si substrate 1 and an n-layer 8 is formed. Thus, a pn junction which is practically in parallel with the main surface of the substrate is constituted. Then, electrode openings are made through an SiO2 film 9 that covers the substrate 1, and mesa grooves 11 are provided by a resist mask 10. Furthermore, glass films 12 are formed on the mesa grooves by the electrocataphoresis method without removing the mask 10. After the treatment of several minutes at about 900°C and sintering of the glass films, portions of the glass films shrink and retreat to the portion of the glass films that are located inside the mesa grooves, as the mask 10 is burned and disappeared. Since rise-up of the glass films over the film 9 is very small, poor contact of an electrode-forming resist mask and poor contact of a light illumination mask are eliminated, thereby the openigs for electrodes 13 and 14 are formed quite accurately.
COPYRIGHT: (C)1980,JPO&Japio
JP12384078A 1978-10-06 1978-10-06 Manufacture of mesa-type semiconductor device Pending JPS5550629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12384078A JPS5550629A (en) 1978-10-06 1978-10-06 Manufacture of mesa-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12384078A JPS5550629A (en) 1978-10-06 1978-10-06 Manufacture of mesa-type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5550629A true JPS5550629A (en) 1980-04-12

Family

ID=14870677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12384078A Pending JPS5550629A (en) 1978-10-06 1978-10-06 Manufacture of mesa-type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5550629A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4681667A (en) * 1982-12-22 1987-07-21 Nec Corporation Method of producing electrostrictive effect element
JPS6476220A (en) * 1987-09-17 1989-03-22 Ibm Bit mask generation circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4681667A (en) * 1982-12-22 1987-07-21 Nec Corporation Method of producing electrostrictive effect element
JPS6476220A (en) * 1987-09-17 1989-03-22 Ibm Bit mask generation circuit

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