JPS5577132A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5577132A JPS5577132A JP15163178A JP15163178A JPS5577132A JP S5577132 A JPS5577132 A JP S5577132A JP 15163178 A JP15163178 A JP 15163178A JP 15163178 A JP15163178 A JP 15163178A JP S5577132 A JPS5577132 A JP S5577132A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- sio
- impurity
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain a FET with a high junction dielectric strength by positioning the PN junction end in a concave portion provided at the central part of the surface of a semiconductor substrate wherein a gate insulator film and a gate electrode are arranged along with source and drain regions formed employing a silica film containing impurity.
CONSTITUTION: Ax SiO2 film 202 and Si3N4 film 203 are formed at the central area of a p-type Si substrate 201 with a thick SiO2 film 204 at both end thereof. With a resist film 20 having an opening arranged on the entire surface as mask, a plasma etching is made to remove the films 203 and 204 and a part 206 of the substrate 201. Thus, a concave part is formed. Subsequently, the surface of the substrate 201 surrounded by the film 204 is exposed to form an SiO2 film 207 serving as the gate insulator film of FET and a gate electrode 208 made of a polycrystal Si in the concave part, and entirely coated with a silica film 209 containing n-type impurity. Then, the impurity is made to diffuse by a heat treatment to form n-type source and drain regions 210 having a PN junction 211 exposed to the wall surface of the concave part.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15163178A JPS5577132A (en) | 1978-12-07 | 1978-12-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15163178A JPS5577132A (en) | 1978-12-07 | 1978-12-07 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5577132A true JPS5577132A (en) | 1980-06-10 |
JPS6255292B2 JPS6255292B2 (en) | 1987-11-19 |
Family
ID=15522754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15163178A Granted JPS5577132A (en) | 1978-12-07 | 1978-12-07 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5577132A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5246784A (en) * | 1975-10-11 | 1977-04-13 | Hitachi Ltd | Process for production of semiconductor device |
-
1978
- 1978-12-07 JP JP15163178A patent/JPS5577132A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5246784A (en) * | 1975-10-11 | 1977-04-13 | Hitachi Ltd | Process for production of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6255292B2 (en) | 1987-11-19 |
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