JPS5577132A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5577132A
JPS5577132A JP15163178A JP15163178A JPS5577132A JP S5577132 A JPS5577132 A JP S5577132A JP 15163178 A JP15163178 A JP 15163178A JP 15163178 A JP15163178 A JP 15163178A JP S5577132 A JPS5577132 A JP S5577132A
Authority
JP
Japan
Prior art keywords
film
substrate
sio
impurity
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15163178A
Other languages
Japanese (ja)
Other versions
JPS6255292B2 (en
Inventor
Mototaka Kamoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15163178A priority Critical patent/JPS5577132A/en
Publication of JPS5577132A publication Critical patent/JPS5577132A/en
Publication of JPS6255292B2 publication Critical patent/JPS6255292B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a FET with a high junction dielectric strength by positioning the PN junction end in a concave portion provided at the central part of the surface of a semiconductor substrate wherein a gate insulator film and a gate electrode are arranged along with source and drain regions formed employing a silica film containing impurity.
CONSTITUTION: Ax SiO2 film 202 and Si3N4 film 203 are formed at the central area of a p-type Si substrate 201 with a thick SiO2 film 204 at both end thereof. With a resist film 20 having an opening arranged on the entire surface as mask, a plasma etching is made to remove the films 203 and 204 and a part 206 of the substrate 201. Thus, a concave part is formed. Subsequently, the surface of the substrate 201 surrounded by the film 204 is exposed to form an SiO2 film 207 serving as the gate insulator film of FET and a gate electrode 208 made of a polycrystal Si in the concave part, and entirely coated with a silica film 209 containing n-type impurity. Then, the impurity is made to diffuse by a heat treatment to form n-type source and drain regions 210 having a PN junction 211 exposed to the wall surface of the concave part.
COPYRIGHT: (C)1980,JPO&Japio
JP15163178A 1978-12-07 1978-12-07 Manufacture of semiconductor device Granted JPS5577132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15163178A JPS5577132A (en) 1978-12-07 1978-12-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15163178A JPS5577132A (en) 1978-12-07 1978-12-07 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5577132A true JPS5577132A (en) 1980-06-10
JPS6255292B2 JPS6255292B2 (en) 1987-11-19

Family

ID=15522754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15163178A Granted JPS5577132A (en) 1978-12-07 1978-12-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5577132A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5246784A (en) * 1975-10-11 1977-04-13 Hitachi Ltd Process for production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5246784A (en) * 1975-10-11 1977-04-13 Hitachi Ltd Process for production of semiconductor device

Also Published As

Publication number Publication date
JPS6255292B2 (en) 1987-11-19

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