JPS57102075A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57102075A
JPS57102075A JP17837780A JP17837780A JPS57102075A JP S57102075 A JPS57102075 A JP S57102075A JP 17837780 A JP17837780 A JP 17837780A JP 17837780 A JP17837780 A JP 17837780A JP S57102075 A JPS57102075 A JP S57102075A
Authority
JP
Japan
Prior art keywords
photo resist
film
resist layer
ion
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17837780A
Other languages
Japanese (ja)
Inventor
Shigeru Okamura
Hidetoshi Nishi
Tsuguo Inada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17837780A priority Critical patent/JPS57102075A/en
Publication of JPS57102075A publication Critical patent/JPS57102075A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To remove the residue of a resist by a method wherein an AlN is for common use with a protection film at an ion implatation and a protection film at a thermal treatment. CONSTITUTION:An AlN film 10 is formed on a GaAs semiconductive substrate 1, and a photo resist layer 2 is formed on a film 10. Si, Se or the like is implanted by an ion implantation through windows 3 in the photo resist 2 and a channel region 5 is formed. The photo resist 2 is removed with a chemical solvent, the photo resist layer 2 is formed on the AlN film 10 again, and an impurity ion is implanted through the windows 3 in the photo resist layer 2 sourse and drain regions 6a, 6b are formed. The resist layer 2, cured by ion implantation, is removed by a plasma asher or the like, and after the implanted ion is activated by a thermal treatment, each electrode window is formed in the AlN film 10 to place an electaode therein.
JP17837780A 1980-12-17 1980-12-17 Semiconductor device and manufacture thereof Pending JPS57102075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17837780A JPS57102075A (en) 1980-12-17 1980-12-17 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17837780A JPS57102075A (en) 1980-12-17 1980-12-17 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57102075A true JPS57102075A (en) 1982-06-24

Family

ID=16047419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17837780A Pending JPS57102075A (en) 1980-12-17 1980-12-17 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57102075A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61246382A (en) * 1985-04-24 1986-11-01 Nec Corp Dry etching device
JPS6481325A (en) * 1987-09-24 1989-03-27 Nec Corp Manufacture of multilayer semiconductor wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140775A (en) * 1974-07-26 1976-04-05 Thomson Csf
JPS5310284A (en) * 1976-07-15 1978-01-30 Siemens Ag Semiconductor device with schottky barrier electrode and method of producing same
JPS5461462A (en) * 1977-10-25 1979-05-17 Sharp Corp Introduction method of impurity
JPS54162960A (en) * 1978-06-14 1979-12-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140775A (en) * 1974-07-26 1976-04-05 Thomson Csf
JPS5310284A (en) * 1976-07-15 1978-01-30 Siemens Ag Semiconductor device with schottky barrier electrode and method of producing same
JPS5461462A (en) * 1977-10-25 1979-05-17 Sharp Corp Introduction method of impurity
JPS54162960A (en) * 1978-06-14 1979-12-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61246382A (en) * 1985-04-24 1986-11-01 Nec Corp Dry etching device
JPS6481325A (en) * 1987-09-24 1989-03-27 Nec Corp Manufacture of multilayer semiconductor wafer

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