JPS6481325A - Manufacture of multilayer semiconductor wafer - Google Patents
Manufacture of multilayer semiconductor waferInfo
- Publication number
- JPS6481325A JPS6481325A JP24009087A JP24009087A JPS6481325A JP S6481325 A JPS6481325 A JP S6481325A JP 24009087 A JP24009087 A JP 24009087A JP 24009087 A JP24009087 A JP 24009087A JP S6481325 A JPS6481325 A JP S6481325A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- nitriding
- gaas
- nitride layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To allow effective control of an interfacial material while reducing an interfacial level by forming an Al thin film on the surface of a III-V compound semiconductor, and then nitriding the Al thin film. CONSTITUTION:First, a GaAs layer 12 is formed on the surface of a GaAs substrate 11, and an Al layer 13 is successively formed. Then a wafer is placed on a low pressure plasma vapor phase deposition device of capacitance coupling type, wherein NH3 is introduced and the pressure thereof is adjusted to be at approximately 10torr for generating a plasma for 20 minutes. Then the Al thin film 13 which is 500Angstrom thick is nitrided, and the Al thin film 13 is modified into a nitride layer 14. The fact that the nitriding has been spread to the surface of the GaAs layer 12 can easily be observed visually. The maximum thickness of such nitriding on the Al layer 13 would be 3000Angstrom . The voltage capacitance characteristic of a MIS diode, wherein a metal is vapor-deposited on an insulating film which has such nitride layer 14 therein with a diameter of 500mumPHI, does not present any hysteresis, whereby the minimum interfacial level density which is as low as 10<11>cm<-2>V<-1> can be obtained with excellent reproducibility.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62240090A JP2674759B2 (en) | 1987-09-24 | 1987-09-24 | Method for manufacturing multi-layer semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62240090A JP2674759B2 (en) | 1987-09-24 | 1987-09-24 | Method for manufacturing multi-layer semiconductor wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6481325A true JPS6481325A (en) | 1989-03-27 |
JP2674759B2 JP2674759B2 (en) | 1997-11-12 |
Family
ID=17054340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62240090A Expired - Fee Related JP2674759B2 (en) | 1987-09-24 | 1987-09-24 | Method for manufacturing multi-layer semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2674759B2 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57102075A (en) * | 1980-12-17 | 1982-06-24 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPS58212139A (en) * | 1983-02-22 | 1983-12-09 | Semiconductor Res Found | Iii-v group compound semiconductor element |
JPS5984553A (en) * | 1982-11-08 | 1984-05-16 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS59181678A (en) * | 1983-03-31 | 1984-10-16 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6271236A (en) * | 1985-09-25 | 1987-04-01 | Hitachi Ltd | Manufacture of compound semiconductor integrated circuit |
-
1987
- 1987-09-24 JP JP62240090A patent/JP2674759B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57102075A (en) * | 1980-12-17 | 1982-06-24 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPS5984553A (en) * | 1982-11-08 | 1984-05-16 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58212139A (en) * | 1983-02-22 | 1983-12-09 | Semiconductor Res Found | Iii-v group compound semiconductor element |
JPS59181678A (en) * | 1983-03-31 | 1984-10-16 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6271236A (en) * | 1985-09-25 | 1987-04-01 | Hitachi Ltd | Manufacture of compound semiconductor integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
JP2674759B2 (en) | 1997-11-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |