JPS6481325A - Manufacture of multilayer semiconductor wafer - Google Patents

Manufacture of multilayer semiconductor wafer

Info

Publication number
JPS6481325A
JPS6481325A JP24009087A JP24009087A JPS6481325A JP S6481325 A JPS6481325 A JP S6481325A JP 24009087 A JP24009087 A JP 24009087A JP 24009087 A JP24009087 A JP 24009087A JP S6481325 A JPS6481325 A JP S6481325A
Authority
JP
Japan
Prior art keywords
layer
thin film
nitriding
gaas
nitride layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24009087A
Other languages
Japanese (ja)
Other versions
JP2674759B2 (en
Inventor
Yoshinari Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62240090A priority Critical patent/JP2674759B2/en
Publication of JPS6481325A publication Critical patent/JPS6481325A/en
Application granted granted Critical
Publication of JP2674759B2 publication Critical patent/JP2674759B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To allow effective control of an interfacial material while reducing an interfacial level by forming an Al thin film on the surface of a III-V compound semiconductor, and then nitriding the Al thin film. CONSTITUTION:First, a GaAs layer 12 is formed on the surface of a GaAs substrate 11, and an Al layer 13 is successively formed. Then a wafer is placed on a low pressure plasma vapor phase deposition device of capacitance coupling type, wherein NH3 is introduced and the pressure thereof is adjusted to be at approximately 10torr for generating a plasma for 20 minutes. Then the Al thin film 13 which is 500Angstrom thick is nitrided, and the Al thin film 13 is modified into a nitride layer 14. The fact that the nitriding has been spread to the surface of the GaAs layer 12 can easily be observed visually. The maximum thickness of such nitriding on the Al layer 13 would be 3000Angstrom . The voltage capacitance characteristic of a MIS diode, wherein a metal is vapor-deposited on an insulating film which has such nitride layer 14 therein with a diameter of 500mumPHI, does not present any hysteresis, whereby the minimum interfacial level density which is as low as 10<11>cm<-2>V<-1> can be obtained with excellent reproducibility.
JP62240090A 1987-09-24 1987-09-24 Method for manufacturing multi-layer semiconductor wafer Expired - Fee Related JP2674759B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62240090A JP2674759B2 (en) 1987-09-24 1987-09-24 Method for manufacturing multi-layer semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62240090A JP2674759B2 (en) 1987-09-24 1987-09-24 Method for manufacturing multi-layer semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS6481325A true JPS6481325A (en) 1989-03-27
JP2674759B2 JP2674759B2 (en) 1997-11-12

Family

ID=17054340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62240090A Expired - Fee Related JP2674759B2 (en) 1987-09-24 1987-09-24 Method for manufacturing multi-layer semiconductor wafer

Country Status (1)

Country Link
JP (1) JP2674759B2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57102075A (en) * 1980-12-17 1982-06-24 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS58212139A (en) * 1983-02-22 1983-12-09 Semiconductor Res Found Iii-v group compound semiconductor element
JPS5984553A (en) * 1982-11-08 1984-05-16 Fujitsu Ltd Manufacture of semiconductor device
JPS59181678A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Manufacture of semiconductor device
JPS6271236A (en) * 1985-09-25 1987-04-01 Hitachi Ltd Manufacture of compound semiconductor integrated circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57102075A (en) * 1980-12-17 1982-06-24 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS5984553A (en) * 1982-11-08 1984-05-16 Fujitsu Ltd Manufacture of semiconductor device
JPS58212139A (en) * 1983-02-22 1983-12-09 Semiconductor Res Found Iii-v group compound semiconductor element
JPS59181678A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Manufacture of semiconductor device
JPS6271236A (en) * 1985-09-25 1987-04-01 Hitachi Ltd Manufacture of compound semiconductor integrated circuit

Also Published As

Publication number Publication date
JP2674759B2 (en) 1997-11-12

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees