JPS5671942A - Oxide film coating of compound semiconductor device - Google Patents
Oxide film coating of compound semiconductor deviceInfo
- Publication number
- JPS5671942A JPS5671942A JP14762979A JP14762979A JPS5671942A JP S5671942 A JPS5671942 A JP S5671942A JP 14762979 A JP14762979 A JP 14762979A JP 14762979 A JP14762979 A JP 14762979A JP S5671942 A JPS5671942 A JP S5671942A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- as2o3
- layer
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Abstract
PURPOSE:To obtain a quality insulating film with a small surface level density through a process consisting of, when an oxide film is formed on a GaAs substrare, prebiously, providing an additional layer of thin metallic-As film or a low-class As oxide layer and feeding an As component to the substrate in substrate heat-oxidation process. CONSTITUTION:A thin metallic-As film 2 is vacuum-deposited or As is deposited in the low vacuum whose O2 pressure is set to 10<-4>-10<-3> Torr on the surface of a GaAs substrate 1. A thin low-class oxide film 2 is deposited thereon. Next, thus- obtained work is heat-treated in O2 gas or the mixture gas of O2 and N2 through two-step reaction. Namely, in the first step, the film 2 is oxidized to generate a quality As2O3 layer at the atmospheric temperatures of 230-350 deg.C and, in the second step, the base material of the substrate 1 is oxidized using the As2O3 film as protective film. Thereby, the Ga2O3 layer generated on the base material by the As2O3 layer generated at the surface of the substrate 1 is prevented to transfer for obtaining an insulating film with an As2O3/Ga2O3 ratio of 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54147629A JPS5846168B2 (en) | 1979-11-16 | 1979-11-16 | Method for manufacturing oxide film coating for compound semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54147629A JPS5846168B2 (en) | 1979-11-16 | 1979-11-16 | Method for manufacturing oxide film coating for compound semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5671942A true JPS5671942A (en) | 1981-06-15 |
| JPS5846168B2 JPS5846168B2 (en) | 1983-10-14 |
Family
ID=15434642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54147629A Expired JPS5846168B2 (en) | 1979-11-16 | 1979-11-16 | Method for manufacturing oxide film coating for compound semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5846168B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141524A (en) * | 1982-02-17 | 1983-08-22 | Hitachi Ltd | Formation of diffusion mask |
| EP0108910A2 (en) * | 1982-11-10 | 1984-05-23 | International Business Machines Corporation | Method of forming a passivated compound semiconductor substrate |
-
1979
- 1979-11-16 JP JP54147629A patent/JPS5846168B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141524A (en) * | 1982-02-17 | 1983-08-22 | Hitachi Ltd | Formation of diffusion mask |
| EP0108910A2 (en) * | 1982-11-10 | 1984-05-23 | International Business Machines Corporation | Method of forming a passivated compound semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5846168B2 (en) | 1983-10-14 |
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