JPS53108767A - Growth method of polycrystalline silicon - Google Patents
Growth method of polycrystalline siliconInfo
- Publication number
- JPS53108767A JPS53108767A JP2362577A JP2362577A JPS53108767A JP S53108767 A JPS53108767 A JP S53108767A JP 2362577 A JP2362577 A JP 2362577A JP 2362577 A JP2362577 A JP 2362577A JP S53108767 A JPS53108767 A JP S53108767A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- growth method
- growth
- microcrystals
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To evenly obtain non-directional microcrystals even in the growth of thick films by repeating vapor phase growth and stopping until a desired thickness is obtained at the time of forming polycrystalline layers containing an impurity at a high concentration on Si substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2362577A JPS53108767A (en) | 1977-03-04 | 1977-03-04 | Growth method of polycrystalline silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2362577A JPS53108767A (en) | 1977-03-04 | 1977-03-04 | Growth method of polycrystalline silicon |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53108767A true JPS53108767A (en) | 1978-09-21 |
JPS6223451B2 JPS6223451B2 (en) | 1987-05-22 |
Family
ID=12115768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2362577A Granted JPS53108767A (en) | 1977-03-04 | 1977-03-04 | Growth method of polycrystalline silicon |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53108767A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62229931A (en) * | 1986-03-19 | 1987-10-08 | ザ ゼネラル エレクトリツク カンパニ−,ピ−.エル.シ− | Evaporation |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0289349A (en) * | 1988-09-27 | 1990-03-29 | Toshiba Corp | Film carrier tape for tab |
JPH0371649U (en) * | 1989-11-15 | 1991-07-19 |
-
1977
- 1977-03-04 JP JP2362577A patent/JPS53108767A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62229931A (en) * | 1986-03-19 | 1987-10-08 | ザ ゼネラル エレクトリツク カンパニ−,ピ−.エル.シ− | Evaporation |
JP2565329B2 (en) * | 1986-03-19 | 1996-12-18 | ザ ゼネラル エレクトリツク カンパニ−,ピ−.エル.シ− | Deposition method |
Also Published As
Publication number | Publication date |
---|---|
JPS6223451B2 (en) | 1987-05-22 |
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