JPS53108767A - Growth method of polycrystalline silicon - Google Patents

Growth method of polycrystalline silicon

Info

Publication number
JPS53108767A
JPS53108767A JP2362577A JP2362577A JPS53108767A JP S53108767 A JPS53108767 A JP S53108767A JP 2362577 A JP2362577 A JP 2362577A JP 2362577 A JP2362577 A JP 2362577A JP S53108767 A JPS53108767 A JP S53108767A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
growth method
growth
microcrystals
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2362577A
Other languages
Japanese (ja)
Other versions
JPS6223451B2 (en
Inventor
Tadahiko Murata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2362577A priority Critical patent/JPS53108767A/en
Publication of JPS53108767A publication Critical patent/JPS53108767A/en
Publication of JPS6223451B2 publication Critical patent/JPS6223451B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To evenly obtain non-directional microcrystals even in the growth of thick films by repeating vapor phase growth and stopping until a desired thickness is obtained at the time of forming polycrystalline layers containing an impurity at a high concentration on Si substrate.
JP2362577A 1977-03-04 1977-03-04 Growth method of polycrystalline silicon Granted JPS53108767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2362577A JPS53108767A (en) 1977-03-04 1977-03-04 Growth method of polycrystalline silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2362577A JPS53108767A (en) 1977-03-04 1977-03-04 Growth method of polycrystalline silicon

Publications (2)

Publication Number Publication Date
JPS53108767A true JPS53108767A (en) 1978-09-21
JPS6223451B2 JPS6223451B2 (en) 1987-05-22

Family

ID=12115768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2362577A Granted JPS53108767A (en) 1977-03-04 1977-03-04 Growth method of polycrystalline silicon

Country Status (1)

Country Link
JP (1) JPS53108767A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229931A (en) * 1986-03-19 1987-10-08 ザ　ゼネラル　エレクトリツク　カンパニ−，ピ−．エル．シ− Evaporation

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0289349A (en) * 1988-09-27 1990-03-29 Toshiba Corp Film carrier tape for tab
JPH0371649U (en) * 1989-11-15 1991-07-19

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229931A (en) * 1986-03-19 1987-10-08 ザ　ゼネラル　エレクトリツク　カンパニ−，ピ−．エル．シ− Evaporation
JP2565329B2 (en) * 1986-03-19 1996-12-18 ザ ゼネラル エレクトリツク カンパニ−，ピ−．エル．シ− Deposition method

Also Published As

Publication number Publication date
JPS6223451B2 (en) 1987-05-22

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