JPS5419662A - Forming method of plasma cvd film - Google Patents

Forming method of plasma cvd film

Info

Publication number
JPS5419662A
JPS5419662A JP8425177A JP8425177A JPS5419662A JP S5419662 A JPS5419662 A JP S5419662A JP 8425177 A JP8425177 A JP 8425177A JP 8425177 A JP8425177 A JP 8425177A JP S5419662 A JPS5419662 A JP S5419662A
Authority
JP
Japan
Prior art keywords
forming method
plasma cvd
cvd film
films
beforehand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8425177A
Other languages
Japanese (ja)
Inventor
Katsuo Sugawara
Hideo Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8425177A priority Critical patent/JPS5419662A/en
Publication of JPS5419662A publication Critical patent/JPS5419662A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain CVD films of good stability by performing pretreatment of wafer surfaces withinthe same bell-jar to beforehand activate the surfaces, and in succession growing Si3N4 films continuously.
JP8425177A 1977-07-15 1977-07-15 Forming method of plasma cvd film Pending JPS5419662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8425177A JPS5419662A (en) 1977-07-15 1977-07-15 Forming method of plasma cvd film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8425177A JPS5419662A (en) 1977-07-15 1977-07-15 Forming method of plasma cvd film

Publications (1)

Publication Number Publication Date
JPS5419662A true JPS5419662A (en) 1979-02-14

Family

ID=13825233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8425177A Pending JPS5419662A (en) 1977-07-15 1977-07-15 Forming method of plasma cvd film

Country Status (1)

Country Link
JP (1) JPS5419662A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54104160A (en) * 1978-02-03 1979-08-16 Tsubakimoto Chain Co Duplex drop lifter
JPS56146876A (en) * 1980-01-16 1981-11-14 Nat Res Dev Adhering method and apparatus
JPS5713512U (en) * 1980-06-28 1982-01-23
JPS57131625A (en) * 1981-02-03 1982-08-14 Mitsubishi Heavy Ind Ltd Automatic conveyor
JPS584528U (en) * 1981-06-30 1983-01-12 株式会社ダイフク Device for transferring transported objects between transport lines
JPS5845226U (en) * 1981-09-18 1983-03-26 日産自動車株式会社 Transfer equipment
JPS5892221U (en) * 1981-12-17 1983-06-22 株式会社ダイフク Load transfer device between conveyors
JPS58194342A (en) * 1982-05-10 1983-11-12 Toshiba Corp Preparation of plasma cvd semiconductor device
JPS5939623A (en) * 1982-08-31 1984-03-05 Tsubakimoto Chain Co Hanger engaging apparatus to transfer carrier
JPS59115561A (en) * 1982-12-23 1984-07-04 Stanley Electric Co Ltd Manufacture of thin film transistor
JPS60140726A (en) * 1983-12-27 1985-07-25 Fujitsu Ltd Plasma vapor growth device
JPS61113074U (en) * 1984-12-28 1986-07-17
JPS61162420A (en) * 1985-01-09 1986-07-23 Daifuku Co Ltd Transfer device
JPS62180086A (en) * 1986-01-31 1987-08-07 Kyocera Corp Glow dicharge decomposition device
JPS62205916A (en) * 1986-03-07 1987-09-10 Honda Motor Co Ltd Relocating device for automobile body
JPS62178887U (en) * 1986-05-02 1987-11-13
JPS6322425A (en) * 1986-07-11 1988-01-29 Honda Motor Co Ltd Transport equipment
JPH02190472A (en) * 1989-01-18 1990-07-26 Iwatani Internatl Corp Method for removing contamination after cleaning by fluorine-based gas in film forming operation system
JPH05339737A (en) * 1992-06-11 1993-12-21 Sakae Denshi Kogyo Kk Method for working dry process coating thereof

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54104160A (en) * 1978-02-03 1979-08-16 Tsubakimoto Chain Co Duplex drop lifter
JPS56146876A (en) * 1980-01-16 1981-11-14 Nat Res Dev Adhering method and apparatus
JPH036223B2 (en) * 1980-01-16 1991-01-29 Nat Res Dev
JPS5713512U (en) * 1980-06-28 1982-01-23
JPS57131625A (en) * 1981-02-03 1982-08-14 Mitsubishi Heavy Ind Ltd Automatic conveyor
JPS584528U (en) * 1981-06-30 1983-01-12 株式会社ダイフク Device for transferring transported objects between transport lines
JPS5845226U (en) * 1981-09-18 1983-03-26 日産自動車株式会社 Transfer equipment
JPS5892221U (en) * 1981-12-17 1983-06-22 株式会社ダイフク Load transfer device between conveyors
JPS58194342A (en) * 1982-05-10 1983-11-12 Toshiba Corp Preparation of plasma cvd semiconductor device
JPH024488B2 (en) * 1982-08-31 1990-01-29 Tsubakimoto Chain Co
JPS5939623A (en) * 1982-08-31 1984-03-05 Tsubakimoto Chain Co Hanger engaging apparatus to transfer carrier
JPS59115561A (en) * 1982-12-23 1984-07-04 Stanley Electric Co Ltd Manufacture of thin film transistor
JPH0454992B2 (en) * 1982-12-23 1992-09-01 Stanley Electric Co Ltd
JPS60140726A (en) * 1983-12-27 1985-07-25 Fujitsu Ltd Plasma vapor growth device
JPH0224372B2 (en) * 1983-12-27 1990-05-29 Fujitsu Ltd
JPS61113074U (en) * 1984-12-28 1986-07-17
JPS61162420A (en) * 1985-01-09 1986-07-23 Daifuku Co Ltd Transfer device
JPS62180086A (en) * 1986-01-31 1987-08-07 Kyocera Corp Glow dicharge decomposition device
JPS62205916A (en) * 1986-03-07 1987-09-10 Honda Motor Co Ltd Relocating device for automobile body
JPH0122474Y2 (en) * 1986-05-02 1989-07-04
JPS62178887U (en) * 1986-05-02 1987-11-13
JPS6322425A (en) * 1986-07-11 1988-01-29 Honda Motor Co Ltd Transport equipment
JPH02190472A (en) * 1989-01-18 1990-07-26 Iwatani Internatl Corp Method for removing contamination after cleaning by fluorine-based gas in film forming operation system
JPH0663097B2 (en) * 1989-01-18 1994-08-17 岩谷産業株式会社 Decontamination method after cleaning with fluoride gas in film forming operation system
JPH05339737A (en) * 1992-06-11 1993-12-21 Sakae Denshi Kogyo Kk Method for working dry process coating thereof

Similar Documents

Publication Publication Date Title
JPS5419662A (en) Forming method of plasma cvd film
JPS52143980A (en) Equipment for plasma deposition
JPS5391665A (en) Plasma cvd device
JPS5358490A (en) Forming method for film
IT1061594B (en) PROCEDURE FOR THE APPLICATION OF AN ANTI-REFLECTION COATING ON PLASTIC SUBSTRATES, IN PARTICULAR LENSES
JPS5391664A (en) Plasma cvd device
JPS5391663A (en) Plasma cvd device
JPS52136574A (en) Cvd apparatus
JPS5235775A (en) Method of forming sliding surface in vacuum apparatus
JPS52132675A (en) Vapor-phase growth method of thin film
JPS5228870A (en) Method for production of thin membrane
JPS52136234A (en) Decorative metal plates
JPS52144961A (en) Vapor growth method
JPS52140274A (en) Pressure-reduction vapor growth method
JPS5433879A (en) Boron film forming process
JPS53108767A (en) Growth method of polycrystalline silicon
JPS5435179A (en) Forming method for boron film
JPS5225086A (en) Light source tube in a chlorella culturing apparatus
JPS5216989A (en) Process of semiconductor thin film
JPS5438106A (en) Mirror making method
JPS53106571A (en) Testing method of galllium aresenide semi-insulating substrate
JPS5393788A (en) Production of semiconductor device
JPS5424976A (en) Plated polyacetal
JPS5667925A (en) Plasma etching method
JPS53135274A (en) Vapour phase growth method