JPS57149751A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57149751A
JPS57149751A JP3488681A JP3488681A JPS57149751A JP S57149751 A JPS57149751 A JP S57149751A JP 3488681 A JP3488681 A JP 3488681A JP 3488681 A JP3488681 A JP 3488681A JP S57149751 A JPS57149751 A JP S57149751A
Authority
JP
Japan
Prior art keywords
film
onto
electrode
wiring
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3488681A
Other languages
Japanese (ja)
Inventor
Kohei Higuchi
Hidekazu Okabayashi
Eiji Nagasawa
Mitsutaka Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3488681A priority Critical patent/JPS57149751A/en
Publication of JPS57149751A publication Critical patent/JPS57149751A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain stable wiring or electrode having low resistance by using the two layer thin-film of polycrystal Si and a high-melting point metallic nitride or using a multilayer thin-film formed by laminating a high-melting point metallic layer onto the two layer thin-film when the wiring or the electrode is shaped to the semiconductor device. CONSTITUTION:An SiO2 film 11 is formed onto an Si substrate, the polycrystal Si film 12 is deposited onto the film 11 through a CVD method, the Mo2N film 13 is coated onto the film 12 through sputtering in the mixed gas of N2 and Ar, and the whole is used as the wiring or the electrode. The Mo film 14 is further shaped onto the film 13, and the laminate consisting of the films 12, 13, 14 is formed in a desired shape through dry etching. Accordingly, a silicide reaction is not generated between the polycrystal Si and the high-melting point metallic layer, and the stable wiring or electrode having low resistance is obtained.
JP3488681A 1981-03-11 1981-03-11 Semiconductor device Pending JPS57149751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3488681A JPS57149751A (en) 1981-03-11 1981-03-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3488681A JPS57149751A (en) 1981-03-11 1981-03-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57149751A true JPS57149751A (en) 1982-09-16

Family

ID=12426622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3488681A Pending JPS57149751A (en) 1981-03-11 1981-03-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57149751A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177968A (en) * 1983-03-07 1984-10-08 モトロ−ラ・インコ−ポレ−テツド Titanium nitride mos device gate electrode
JPS62200747A (en) * 1986-02-28 1987-09-04 Toshiba Corp Manufacture of semiconductor device
US4935804A (en) * 1984-03-19 1990-06-19 Fujitsu Limited Semiconductor device
JP2002085486A (en) * 2000-09-14 2002-03-26 Leben Co Ltd Nursing care grip

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507430A (en) * 1973-05-18 1975-01-25
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507430A (en) * 1973-05-18 1975-01-25
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177968A (en) * 1983-03-07 1984-10-08 モトロ−ラ・インコ−ポレ−テツド Titanium nitride mos device gate electrode
US4935804A (en) * 1984-03-19 1990-06-19 Fujitsu Limited Semiconductor device
JPS62200747A (en) * 1986-02-28 1987-09-04 Toshiba Corp Manufacture of semiconductor device
JP2002085486A (en) * 2000-09-14 2002-03-26 Leben Co Ltd Nursing care grip

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