JPS5771131A - Formation of conductor for aluminum electrode - Google Patents

Formation of conductor for aluminum electrode

Info

Publication number
JPS5771131A
JPS5771131A JP14869080A JP14869080A JPS5771131A JP S5771131 A JPS5771131 A JP S5771131A JP 14869080 A JP14869080 A JP 14869080A JP 14869080 A JP14869080 A JP 14869080A JP S5771131 A JPS5771131 A JP S5771131A
Authority
JP
Japan
Prior art keywords
film
electrode
repeated
al2o3
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14869080A
Other languages
Japanese (ja)
Inventor
Manabu Watase
Michihiro Kobiki
Kazuaki Segawa
Takeshi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14869080A priority Critical patent/JPS5771131A/en
Publication of JPS5771131A publication Critical patent/JPS5771131A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To suppress the progress with the passage of time of heat or electricity caused changes by a method wherein a process of vapor depositing 1/n of a prescribed thickness t of Al and of exposing the resultant thin film to air is repeated n times so that the Al layer is intentionally provided with oxide films. CONSTITUTION:A semiconductor substrate upon which Al is vapor deposited and exposed to air to provide a thin film of Al2O3. This process is repeated n times to acquire a film of prescribed thickness. Then photoetching is performed to complete an Al electrode. The Al2O3 film, constituting a barrier to migration, prevents the Al from recrystalizing into larger grains. The result is a highly reliable Al electrode that is thermally, electrically stable.
JP14869080A 1980-10-22 1980-10-22 Formation of conductor for aluminum electrode Pending JPS5771131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14869080A JPS5771131A (en) 1980-10-22 1980-10-22 Formation of conductor for aluminum electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14869080A JPS5771131A (en) 1980-10-22 1980-10-22 Formation of conductor for aluminum electrode

Publications (1)

Publication Number Publication Date
JPS5771131A true JPS5771131A (en) 1982-05-01

Family

ID=15458415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14869080A Pending JPS5771131A (en) 1980-10-22 1980-10-22 Formation of conductor for aluminum electrode

Country Status (1)

Country Link
JP (1) JPS5771131A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61193441A (en) * 1985-02-20 1986-08-27 Mitsubishi Electric Corp Method of forming metal thin film and therefor device
JPS62133735A (en) * 1985-12-05 1987-06-16 Nec Corp Manufacture of semiconductor device
JPS6413740A (en) * 1987-03-23 1989-01-18 Toshiba Corp Formation of wiring layer in semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61193441A (en) * 1985-02-20 1986-08-27 Mitsubishi Electric Corp Method of forming metal thin film and therefor device
JPS62133735A (en) * 1985-12-05 1987-06-16 Nec Corp Manufacture of semiconductor device
JPS6413740A (en) * 1987-03-23 1989-01-18 Toshiba Corp Formation of wiring layer in semiconductor device

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