GB1267975A - Thin film electronic components on flexible substrates and the apparatus and process for producing same - Google Patents
Thin film electronic components on flexible substrates and the apparatus and process for producing sameInfo
- Publication number
- GB1267975A GB1267975A GB23269/69A GB2326969A GB1267975A GB 1267975 A GB1267975 A GB 1267975A GB 23269/69 A GB23269/69 A GB 23269/69A GB 2326969 A GB2326969 A GB 2326969A GB 1267975 A GB1267975 A GB 1267975A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- layer
- aluminium
- tin
- alloys
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- RWNKSTSCBHKHTB-UHFFFAOYSA-N Hexachloro-1,3-butadiene Chemical compound ClC(Cl)=C(Cl)C(Cl)=C(Cl)Cl RWNKSTSCBHKHTB-UHFFFAOYSA-N 0.000 abstract 2
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- 239000011135 tin Substances 0.000 abstract 2
- 229910052718 tin Inorganic materials 0.000 abstract 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 abstract 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract 1
- 239000004593 Epoxy Substances 0.000 abstract 1
- 229910000640 Fe alloy Inorganic materials 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 125000003342 alkenyl group Chemical group 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 239000002585 base Substances 0.000 abstract 1
- 239000005385 borate glass Substances 0.000 abstract 1
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 239000011575 calcium Substances 0.000 abstract 1
- 229920002678 cellulose Polymers 0.000 abstract 1
- 239000001913 cellulose Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical class [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0317—Thin film conductor layer; Thin film passive component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10166—Transistor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1545—Continuous processing, i.e. involving rolls moving a band-like or solid carrier along a continuous production path
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Abstract
1,267,975. Semi-conductor device manufacture. WESTINGHOUSE ELECTRIC CORP. 7 May, 1969 [24 June, 1968], No. 23269/69. Heading H1K. [Also in Division C7] A semi-conductor device comprises a flexible metal substrate with an insulating layer on one face, a pair of electrodes and a semi-conductor layer extending between them disposed on said layer, and a further insulating layer carrying a third electrode where it overlies the semiconductor. Suitable substrates are ribbons of nickel, copper, aluminium, tin, tantalum, alloys thereof and ferrous alloys such as stainless steel, coated with insulation such as epoxy and epoxypolyamide-imide resin mixes. In the preferred method the film, precleaned by specified processes, is passed in a vacuum chamber beneath a source of the various vapours required and layers are deposited on it successively through appropriately shaped metal masks mounted on a common rotatable holder. Alternatively, the various vapour sources and their associated masks are spatially separated and the tape is stepped forward from one to the next. Finally the tape passes to a testing station and a station where the devices are sealed under a cellulose tape before being wound on to a storage drum. In the first deposition step source and drain electrodes 80-500 thick of gold, silver, aluminium, nickel or base alloys thereof are provided. Then a semi-conductor layer of any crystalline form and having a thickness between 40 and 5000 and varying with the band gap of the material is deposited, sometimes with the ribbon heated, followed by the gate insulation, preferably >300 thick, and finally a 300- 1000 gate electrode layer and possibly a passivating layer of silicon oxide. Semiconductor materials specified are silicon, tellurium, tin oxide, lead telluride, cadmium sulphide and selenide, and the arsenides of indium and gallium. Silicon monoxide and dioxide, alumina, calcium and magnesium fluorides, lead silicate, borate and borosilicate glasses and polymers of hexachlorobutadiene, divinyl benzene, aryl sulphones, fluorinated alkenyls and para-xylene, are suitable as gate insulation and aluminium, copper, tin, gold, silver and platinum as gate electrode material.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74706468A | 1968-06-24 | 1968-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1267975A true GB1267975A (en) | 1972-03-22 |
Family
ID=25003519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB23269/69A Expired GB1267975A (en) | 1968-06-24 | 1969-05-07 | Thin film electronic components on flexible substrates and the apparatus and process for producing same |
Country Status (4)
| Country | Link |
|---|---|
| CA (1) | CA937683A (en) |
| DE (1) | DE1931295A1 (en) |
| FR (1) | FR2011597A1 (en) |
| GB (1) | GB1267975A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2118365A (en) * | 1982-04-13 | 1983-10-26 | Suwa Seikosha Kk | A thin film MOS transistor and an active matrix liquid crystal display device |
| GB2122646A (en) * | 1980-08-22 | 1984-01-18 | Gen Electric | Transfer lamination of vapor deposited foils method and product |
| US5554861A (en) * | 1982-04-13 | 1996-09-10 | Seiko Epson Corporation | Thin film transistors and active matrices including the same |
| US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
| US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10329262B3 (en) | 2003-06-23 | 2004-12-16 | Infineon Technologies Ag | Coating a paper substrate with a polymer, useful for producing semiconductor substrates, comprises contacting the surface with a solution of a phenol-functional (co)polymer |
-
1969
- 1969-05-07 GB GB23269/69A patent/GB1267975A/en not_active Expired
- 1969-05-22 CA CA052178A patent/CA937683A/en not_active Expired
- 1969-06-20 DE DE19691931295 patent/DE1931295A1/en active Pending
- 1969-06-24 FR FR6921107A patent/FR2011597A1/fr not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2122646A (en) * | 1980-08-22 | 1984-01-18 | Gen Electric | Transfer lamination of vapor deposited foils method and product |
| GB2118365A (en) * | 1982-04-13 | 1983-10-26 | Suwa Seikosha Kk | A thin film MOS transistor and an active matrix liquid crystal display device |
| US5124768A (en) * | 1982-04-13 | 1992-06-23 | Seiko Epson Corporation | Thin film transistor and active matrix assembly including same |
| US5294555A (en) * | 1982-04-13 | 1994-03-15 | Seiko Epson Corporation | Method of manufacturing thin film transistor and active matrix assembly including same |
| US5554861A (en) * | 1982-04-13 | 1996-09-10 | Seiko Epson Corporation | Thin film transistors and active matrices including the same |
| US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
| US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
| US6242777B1 (en) | 1982-04-13 | 2001-06-05 | Seiko Epson Corporation | Field effect transistor and liquid crystal devices including the same |
| US6294796B1 (en) | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
Also Published As
| Publication number | Publication date |
|---|---|
| CA937683A (en) | 1973-11-27 |
| DE1931295A1 (en) | 1970-01-02 |
| FR2011597A1 (en) | 1970-03-06 |
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