FR2238249A1 - Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrate - Google Patents
Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrateInfo
- Publication number
- FR2238249A1 FR2238249A1 FR7411074A FR7411074A FR2238249A1 FR 2238249 A1 FR2238249 A1 FR 2238249A1 FR 7411074 A FR7411074 A FR 7411074A FR 7411074 A FR7411074 A FR 7411074A FR 2238249 A1 FR2238249 A1 FR 2238249A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor
- compat
- ability
- substrate
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Conductive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Contacts are made to semiconductor devices using a contact layer a conductive refractory nitride of Ti, Zn, Hf, V, Vb, or Ta, the layer being formed as a thin film by deposition in a reduced pressure atmosphere of inert gas and N2. The process is for beam had devices IGFET's etc. esp. gate electrode; and the product being less subject to corrosion. The contacts are run as a conductive grid across the face of the dielectric layer.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37963173A | 1973-07-16 | 1973-07-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2238249A1 true FR2238249A1 (en) | 1975-02-14 |
FR2238249B1 FR2238249B1 (en) | 1978-11-17 |
Family
ID=23498032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7411074A Granted FR2238249A1 (en) | 1973-07-16 | 1974-03-29 | Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrate |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5040085A (en) |
BE (1) | BE817616A (en) |
DE (1) | DE2433299A1 (en) |
FR (1) | FR2238249A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0194950A2 (en) | 1985-03-15 | 1986-09-17 | Fairchild Semiconductor Corporation | High temperature interconnect system for an integrated circuit |
US4920071A (en) * | 1985-03-15 | 1990-04-24 | Fairchild Camera And Instrument Corporation | High temperature interconnect system for an integrated circuit |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57150349U (en) * | 1981-03-11 | 1982-09-21 | ||
JPS5830147A (en) * | 1981-08-18 | 1983-02-22 | Toshiba Corp | Semiconductor device |
US4829363A (en) * | 1984-04-13 | 1989-05-09 | Fairchild Camera And Instrument Corp. | Structure for inhibiting dopant out-diffusion |
-
1974
- 1974-03-29 FR FR7411074A patent/FR2238249A1/en active Granted
- 1974-07-11 DE DE19742433299 patent/DE2433299A1/en active Pending
- 1974-07-12 BE BE146527A patent/BE817616A/en unknown
- 1974-07-15 JP JP8028574A patent/JPS5040085A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0194950A2 (en) | 1985-03-15 | 1986-09-17 | Fairchild Semiconductor Corporation | High temperature interconnect system for an integrated circuit |
EP0194950A3 (en) * | 1985-03-15 | 1988-08-10 | Fairchild Semiconductor Corporation | High temperature interconnect system for an integrated circuit |
US4920071A (en) * | 1985-03-15 | 1990-04-24 | Fairchild Camera And Instrument Corporation | High temperature interconnect system for an integrated circuit |
US5414301A (en) * | 1985-03-15 | 1995-05-09 | National Semiconductor Corporation | High temperature interconnect system for an integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
BE817616A (en) | 1974-11-04 |
DE2433299A1 (en) | 1975-02-06 |
FR2238249B1 (en) | 1978-11-17 |
JPS5040085A (en) | 1975-04-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |