GB1312464A - Method of preventing a chemical reaction between aluminium and silicon dioxide in a semiconductor device - Google Patents
Method of preventing a chemical reaction between aluminium and silicon dioxide in a semiconductor deviceInfo
- Publication number
- GB1312464A GB1312464A GB4318570A GB4318570A GB1312464A GB 1312464 A GB1312464 A GB 1312464A GB 4318570 A GB4318570 A GB 4318570A GB 4318570 A GB4318570 A GB 4318570A GB 1312464 A GB1312464 A GB 1312464A
- Authority
- GB
- United Kingdom
- Prior art keywords
- aluminium
- alumina
- reaction
- silica
- preventing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1312464 Semi-conductor devices MOTOROLA Inc 9 Sept 1970 [25 Sept 1969] 43185/70 Heading H1K Problems associated with the reaction between aluminium contacts or tracks and silica passivation on semi-conductor devices are avoided by preventing such reaction. An alumina layer between the materials is used for this purpose. The structure of Fig. 1d has a silicon substrate with silica passivation 12 over which runs on aluminium track 18 which is isolated from the silica (both underneath and at edge 24) by alumina layers 20, 22. The underlying alumina layer 20 may be formed by direct evaporative deposition or during the initial stage of evaporative deposition of the aluminium 18, the aluminium being deposited at relatively low temperature and in an atmosphere of relatively high pressure so that alumina is formed by reaction between aluminium vapour and residual water vapour in the system. Fig. 4f, shows the contact region of an emitter electrode 86 in the formation of which an overall deposit of alumina 80 has been provided over the apertured silica passivation 76, a contact aperture has been etched in the alumina, and an aluminium film has been deposited overall and etched to the desired portion 86 with similar etching of the alumina which however is left as a complete film to provide a barrier against interaction at this edge of the electrode. Variants of these structures use different combinations of the same features.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US86098369A | 1969-09-25 | 1969-09-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1312464A true GB1312464A (en) | 1973-04-04 |
Family
ID=25334551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4318570A Expired GB1312464A (en) | 1969-09-25 | 1970-09-09 | Method of preventing a chemical reaction between aluminium and silicon dioxide in a semiconductor device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS4814633B1 (en) |
BE (1) | BE756685A (en) |
DE (1) | DE2045633A1 (en) |
FR (1) | FR2062559A5 (en) |
GB (1) | GB1312464A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5027447U (en) * | 1973-07-03 | 1975-03-29 | ||
JPS50134041U (en) * | 1974-04-18 | 1975-11-05 | ||
JPS50134040U (en) * | 1974-04-18 | 1975-11-05 | ||
US4433004A (en) * | 1979-07-11 | 1984-02-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and a method for manufacturing the same |
JPS5643742A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Manufacture of semiconductor |
US4381595A (en) * | 1979-10-09 | 1983-05-03 | Mitsubishi Denki Kabushiki Kaisha | Process for preparing multilayer interconnection |
-
0
- BE BE756685D patent/BE756685A/en unknown
-
1970
- 1970-08-31 JP JP7564970A patent/JPS4814633B1/ja active Pending
- 1970-09-09 GB GB4318570A patent/GB1312464A/en not_active Expired
- 1970-09-15 DE DE19702045633 patent/DE2045633A1/en active Pending
- 1970-09-23 FR FR7034504A patent/FR2062559A5/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2062559A5 (en) | 1971-06-25 |
BE756685A (en) | 1971-03-25 |
JPS4814633B1 (en) | 1973-05-09 |
DE2045633A1 (en) | 1971-05-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CSNS | Application of which complete specification have been accepted and published, but patent is not sealed |