GB1495377A - Method of manufacturing a charge transfer device - Google Patents

Method of manufacturing a charge transfer device

Info

Publication number
GB1495377A
GB1495377A GB3682976A GB3682976A GB1495377A GB 1495377 A GB1495377 A GB 1495377A GB 3682976 A GB3682976 A GB 3682976A GB 3682976 A GB3682976 A GB 3682976A GB 1495377 A GB1495377 A GB 1495377A
Authority
GB
United Kingdom
Prior art keywords
layer
insulating layer
conductive layer
pattern
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3682976A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1495377A publication Critical patent/GB1495377A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

1495377 Charge coupled devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 6 Sept 1976 [9 Sept 1975] 36829/76 Heading H1K A charge coupled device is manufactured by providing on a semi-conductor substrate 1 a first insulating layer 2, a first conductive layer 3 and a second insulating layer 4, forming a first pattern in the layers 3 and 4, oxidizing the thus exposed edges 6 of the first conductive layer 3 to form there oxide thinner than the second insulating layer 4, depositing a second conductive layer 5 and forming therein a second pattern which partly overlaps the first pattern. The conductive layers 3, 5 may be of Al or Ta, optionally containing small amounts of Si or Cu, or of polycrystalline Si, the second insulating layer 4 and the oxide on the edge 6 being formed by anodic oxidation (using a lower applied voltage on the edge 6 than for the layer 4) or thermal oxidation, which may also be employed to form the first insulating layer 2. The layer 4 may alternatively be vapour deposited. The second conductive layer 5 may contact the first conductive layer 3 through windows etched in the second insulating layer 4.
GB3682976A 1975-09-09 1976-09-06 Method of manufacturing a charge transfer device Expired GB1495377A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7510586A NL7510586A (en) 1975-09-09 1975-09-09 PROCEDURE FOR MANUFACTURING A CARGO TRANSFER DEVICE AND CARGO TRANSFER DEVICE MANUFACTURED USING THE PROCEDURE.

Publications (1)

Publication Number Publication Date
GB1495377A true GB1495377A (en) 1977-12-14

Family

ID=19824439

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3682976A Expired GB1495377A (en) 1975-09-09 1976-09-06 Method of manufacturing a charge transfer device

Country Status (7)

Country Link
JP (1) JPS5233487A (en)
CA (1) CA1061471A (en)
DE (1) DE2639479A1 (en)
FR (1) FR2324124A1 (en)
GB (1) GB1495377A (en)
IT (1) IT1063690B (en)
NL (1) NL7510586A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006006341A1 (en) * 2004-07-14 2006-01-19 Fuji Photo Film Co., Ltd. Solid state image pickup device and its manufacture
CN112447587A (en) * 2019-08-28 2021-03-05 力晶积成电子制造股份有限公司 Method for manufacturing interconnect structure

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4215156A (en) * 1977-08-26 1980-07-29 International Business Machines Corporation Method for fabricating tantalum semiconductor contacts
NL186886C (en) * 1980-11-28 1992-03-16 Philips Nv SEMICONDUCTOR DEVICE.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1444047A (en) * 1973-02-28 1976-07-28 Hitachi Ltd Charge transfer semiconductor devices and methods of fabricating such devices
JPS579227B2 (en) * 1973-02-28 1982-02-20
US3911560A (en) * 1974-02-25 1975-10-14 Fairchild Camera Instr Co Method for manufacturing a semiconductor device having self-aligned implanted barriers with narrow gaps between electrodes

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006006341A1 (en) * 2004-07-14 2006-01-19 Fuji Photo Film Co., Ltd. Solid state image pickup device and its manufacture
US7679668B2 (en) 2004-07-14 2010-03-16 Fujifilm Corporation Solid state image pickup device and its manufacture
CN112447587A (en) * 2019-08-28 2021-03-05 力晶积成电子制造股份有限公司 Method for manufacturing interconnect structure
CN112447587B (en) * 2019-08-28 2023-09-26 力晶积成电子制造股份有限公司 Method for manufacturing interconnect structure

Also Published As

Publication number Publication date
JPS5233487A (en) 1977-03-14
NL7510586A (en) 1977-03-11
DE2639479A1 (en) 1977-04-14
CA1061471A (en) 1979-08-28
FR2324124A1 (en) 1977-04-08
IT1063690B (en) 1985-02-11

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee