GB1444047A - Charge transfer semiconductor devices and methods of fabricating such devices - Google Patents

Charge transfer semiconductor devices and methods of fabricating such devices

Info

Publication number
GB1444047A
GB1444047A GB870774A GB870774A GB1444047A GB 1444047 A GB1444047 A GB 1444047A GB 870774 A GB870774 A GB 870774A GB 870774 A GB870774 A GB 870774A GB 1444047 A GB1444047 A GB 1444047A
Authority
GB
United Kingdom
Prior art keywords
electrodes
series
layer
insulating layer
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB870774A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2316173A external-priority patent/JPS49114374A/ja
Priority claimed from JP7171373A external-priority patent/JPS57662B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1444047A publication Critical patent/GB1444047A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H01L29/4991—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material comprising an air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1444047 Charge transfer devices HITACHI Ltd 26 Feb 1974 [28 Feb 1973 27 June 1973] 8707/74 Heading H1K A charge transfer semi-conductor device, e.g. a charge-coupled device, comprises a first series of electrodes 24, 25, Fig. 4, disposed on an insulating layer 21, and a second series of electrodes 22, 23 coplanar with the first series and disposed on the insulating layer 21 only between pairs of electrodes of the first series, wherein oxidized regions 26, 27, 28 formed by oxidation of electrode material of the first series are disposed on the insulating layer 21 in the gap between each of the adjacent electrodes. As shown in Fig. 4 the oxide may completely fill the gaps between the electrodes. Alternatively, Fig. 11f, an air gap 78 may also be present between the electrodes. The provision of the second series of electrodes enables the efficient transfer of trapped charges between successive electrodes of the first series by controlling the potential well in the semi-conductor between the first electrodes. The device may be formed by providing a 1000 Š thick SiO 2 layer on an N-type Si body, forming thereover a 5000 Š A1 layer and a photo-resist layer. By photolithographic etching the A1 layer is etched to provide a pattern of the first series of electrodes, and the etching may be continued to remove some of the A1 under the edge of the photoresist if an air gap is to be provided. The exposed side surfaces of the Al electrodes are then anodically oxidized to form oxidized regions about 2000 Š thick. Additionally at this stage if required boron ions 74 can be implanted in the semi-conductor body between the first series of electrodes, Fig. 11f. Thereafter the second series of electrodes is formed by evaporation of A1 or Au to a thickness of 5000 Š, still using the original photoresist as a mask. The photoresist may then be removed and respective adjacent electrodes, one from each series forming the components of a composite electrode 73, 75, may be interconnected in pairs by conductive layers 77, Fig. 11f. The electrode gap is between 100 Š and 1 Á, preferably 200- 5000 Š. In an alternative embodiment the first series of electrodes is formed of polycrystalline silicon doped with phosphorus and the mask layer formed thereover is a phosphosilicate glass. Alternatively the first and second series of electrodes could be formed by Ta, W or Mo, and the second series of electrodes could be formed of a conductive oxide such as SnO 2 or InO 2 . The insulating layer formed in the semiconductor body may alternatively comprise Al 2 O 3 or Si 3 N 4 , and these materials or Al could be used as the mask material.
GB870774A 1973-02-28 1974-02-26 Charge transfer semiconductor devices and methods of fabricating such devices Expired GB1444047A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2316173A JPS49114374A (en) 1973-02-28 1973-02-28
JP7171373A JPS57662B2 (en) 1973-06-27 1973-06-27

Publications (1)

Publication Number Publication Date
GB1444047A true GB1444047A (en) 1976-07-28

Family

ID=26360477

Family Applications (1)

Application Number Title Priority Date Filing Date
GB870774A Expired GB1444047A (en) 1973-02-28 1974-02-26 Charge transfer semiconductor devices and methods of fabricating such devices

Country Status (3)

Country Link
DE (1) DE2409664C2 (en)
GB (1) GB1444047A (en)
NL (1) NL163901C (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7510586A (en) * 1975-09-09 1977-03-11 Philips Nv PROCEDURE FOR MANUFACTURING A CARGO TRANSFER DEVICE AND CARGO TRANSFER DEVICE MANUFACTURED USING THE PROCEDURE.
GB1527894A (en) * 1975-10-15 1978-10-11 Mullard Ltd Methods of manufacturing electronic devices
US4123300A (en) * 1977-05-02 1978-10-31 International Business Machines Corporation Integrated circuit process utilizing lift-off techniques
DE2939456A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED SEMICONDUCTOR CIRCUITS, IN PARTICULAR CCD CIRCUITS, WITH SELF-ADJUSTED, NON-OVERLAPPING POLY-SILICON ELECTRODES
DE2939488A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED SEMICONDUCTOR CIRCUITS, IN PARTICULAR CCD CIRCUITS, WITH SELF-ADJUSTED, NON-OVERLAPPING POLY-SILICON ELECTRODES
NL8202777A (en) * 1982-07-09 1984-02-01 Philips Nv SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THEREOF

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1075811A (en) * 1970-10-29 1980-04-15 George E. Smith Charge coupled device
US3756924A (en) * 1971-04-01 1973-09-04 Texas Instruments Inc Method of fabricating a semiconductor device

Also Published As

Publication number Publication date
DE2409664A1 (en) 1974-10-17
DE2409664C2 (en) 1983-09-15
NL163901C (en) 1980-10-15
NL163901B (en) 1980-05-16
NL7402772A (en) 1974-08-30

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19940225