NL7510586A - PROCEDURE FOR MANUFACTURING A CARGO TRANSFER DEVICE AND CARGO TRANSFER DEVICE MANUFACTURED USING THE PROCEDURE. - Google Patents

PROCEDURE FOR MANUFACTURING A CARGO TRANSFER DEVICE AND CARGO TRANSFER DEVICE MANUFACTURED USING THE PROCEDURE.

Info

Publication number
NL7510586A
NL7510586A NL7510586A NL7510586A NL7510586A NL 7510586 A NL7510586 A NL 7510586A NL 7510586 A NL7510586 A NL 7510586A NL 7510586 A NL7510586 A NL 7510586A NL 7510586 A NL7510586 A NL 7510586A
Authority
NL
Netherlands
Prior art keywords
procedure
transfer device
cargo transfer
manufacturing
device manufactured
Prior art date
Application number
NL7510586A
Other languages
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7510586A priority Critical patent/NL7510586A/en
Priority to CA260,320A priority patent/CA1061471A/en
Priority to DE19762639479 priority patent/DE2639479A1/en
Priority to GB3682976A priority patent/GB1495377A/en
Priority to IT2691776A priority patent/IT1063690B/en
Priority to JP10633176A priority patent/JPS5233487A/en
Priority to FR7627116A priority patent/FR2324124A1/en
Publication of NL7510586A publication Critical patent/NL7510586A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
NL7510586A 1975-09-09 1975-09-09 PROCEDURE FOR MANUFACTURING A CARGO TRANSFER DEVICE AND CARGO TRANSFER DEVICE MANUFACTURED USING THE PROCEDURE. NL7510586A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL7510586A NL7510586A (en) 1975-09-09 1975-09-09 PROCEDURE FOR MANUFACTURING A CARGO TRANSFER DEVICE AND CARGO TRANSFER DEVICE MANUFACTURED USING THE PROCEDURE.
CA260,320A CA1061471A (en) 1975-09-09 1976-09-01 Controlled thickness of dielectric films on conductor edges
DE19762639479 DE2639479A1 (en) 1975-09-09 1976-09-02 METHOD OF PRODUCING A CHARGE TRANSFER ARRANGEMENT AND CHARGE TRANSFER ARRANGEMENT PRODUCED BY THIS METHOD
GB3682976A GB1495377A (en) 1975-09-09 1976-09-06 Method of manufacturing a charge transfer device
IT2691776A IT1063690B (en) 1975-09-09 1976-09-06 METHOD OF MANUFACTURE OF A CHARGE-TRANSFER DEVICE AND CHARGE-TRANSFER DEVICE MANUFACTURED WITH THE AID OF THIS METHOD
JP10633176A JPS5233487A (en) 1975-09-09 1976-09-07 Method of producing charge transfer device
FR7627116A FR2324124A1 (en) 1975-09-09 1976-09-09 PROCESS FOR THE REALIZATION OF A CHARGE TRANSMISSION DEVICE AND CHARGING DEVICE THUS REALIZED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7510586A NL7510586A (en) 1975-09-09 1975-09-09 PROCEDURE FOR MANUFACTURING A CARGO TRANSFER DEVICE AND CARGO TRANSFER DEVICE MANUFACTURED USING THE PROCEDURE.

Publications (1)

Publication Number Publication Date
NL7510586A true NL7510586A (en) 1977-03-11

Family

ID=19824439

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7510586A NL7510586A (en) 1975-09-09 1975-09-09 PROCEDURE FOR MANUFACTURING A CARGO TRANSFER DEVICE AND CARGO TRANSFER DEVICE MANUFACTURED USING THE PROCEDURE.

Country Status (7)

Country Link
JP (1) JPS5233487A (en)
CA (1) CA1061471A (en)
DE (1) DE2639479A1 (en)
FR (1) FR2324124A1 (en)
GB (1) GB1495377A (en)
IT (1) IT1063690B (en)
NL (1) NL7510586A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4215156A (en) * 1977-08-26 1980-07-29 International Business Machines Corporation Method for fabricating tantalum semiconductor contacts
NL186886C (en) * 1980-11-28 1992-03-16 Philips Nv SEMICONDUCTOR DEVICE.
JP4739703B2 (en) * 2004-07-14 2011-08-03 富士フイルム株式会社 Manufacturing method of solid-state imaging device
TWI701768B (en) * 2019-08-28 2020-08-11 力晶積成電子製造股份有限公司 Method of manufacturing interconnect structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1444047A (en) * 1973-02-28 1976-07-28 Hitachi Ltd Charge transfer semiconductor devices and methods of fabricating such devices
JPS579227B2 (en) * 1973-02-28 1982-02-20
US3911560A (en) * 1974-02-25 1975-10-14 Fairchild Camera Instr Co Method for manufacturing a semiconductor device having self-aligned implanted barriers with narrow gaps between electrodes

Also Published As

Publication number Publication date
JPS5233487A (en) 1977-03-14
DE2639479A1 (en) 1977-04-14
CA1061471A (en) 1979-08-28
FR2324124A1 (en) 1977-04-08
IT1063690B (en) 1985-02-11
GB1495377A (en) 1977-12-14

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Legal Events

Date Code Title Description
BV The patent application has lapsed