GB1179069A - Method for manufacturing semiconductor devices. - Google Patents

Method for manufacturing semiconductor devices.

Info

Publication number
GB1179069A
GB1179069A GB5056168A GB5056168A GB1179069A GB 1179069 A GB1179069 A GB 1179069A GB 5056168 A GB5056168 A GB 5056168A GB 5056168 A GB5056168 A GB 5056168A GB 1179069 A GB1179069 A GB 1179069A
Authority
GB
United Kingdom
Prior art keywords
semi
layer
window
conductor
conductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5056168A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1179069A publication Critical patent/GB1179069A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Abstract

1,179,069. Semi-conductor devices. HITACHI Ltd. 24 Oct., 1968 [6 Nov., 1967], No. 50561/68. Heading H1K. To provide a good waterproof stable coating on the surface of a semi-conductor device, a silicon oxide film 12 is formed on the surface of a semi-conductor substrate 11 and doped with phosphorus to produce a layer 13 of a phosphorus oxide, a relatively thin layer 14 containing mainly alumina is formed on this layer, a window is formed through the layers by etching with a hydrofluoric acid based etchant to expose the substrate surface, and finally a relatively thick insulating layer 18 containing mainly alumina, silicon nitride or tantalum oxide is formed over the whole. The films are formed by evaporation methods or chemical vapour deposition methods. A window is finally etched in the insulating layers in the position of the first window to allow contact to be made to the semi-conductor device. A photo-resist film 16b is applied for this purpose. In a further embodiment, Fig. 6, not shown, a metal electrode film is deposited prior to the relatively thick final insulating layer to contact the semi-conductor device and is exposed by etching where required.
GB5056168A 1967-11-06 1968-10-24 Method for manufacturing semiconductor devices. Expired GB1179069A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7096967A JPS4830786B1 (en) 1967-11-06 1967-11-06

Publications (1)

Publication Number Publication Date
GB1179069A true GB1179069A (en) 1970-01-28

Family

ID=13446844

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5056168A Expired GB1179069A (en) 1967-11-06 1968-10-24 Method for manufacturing semiconductor devices.

Country Status (5)

Country Link
JP (1) JPS4830786B1 (en)
DE (1) DE1807106B2 (en)
FR (1) FR1590530A (en)
GB (1) GB1179069A (en)
NL (1) NL151214B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2077628A1 (en) * 1970-01-30 1971-10-29 Hitachi Ltd

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2077628A1 (en) * 1970-01-30 1971-10-29 Hitachi Ltd

Also Published As

Publication number Publication date
DE1807106A1 (en) 1969-06-19
FR1590530A (en) 1970-04-13
NL6815728A (en) 1969-05-08
NL151214B (en) 1976-10-15
JPS4830786B1 (en) 1973-09-22
DE1807106B2 (en) 1970-06-25

Similar Documents

Publication Publication Date Title
US3740280A (en) Method of making semiconductor device
JPS55163860A (en) Manufacture of semiconductor device
US4261095A (en) Self aligned schottky guard ring
GB1523677A (en) Semiconductor device and a method for manufacturing the same
US4684435A (en) Method of manufacturing thin film transistor
US3920861A (en) Method of making a semiconductor device
GB1291683A (en) Semiconductor device having a passivating film
US3849270A (en) Process of manufacturing semiconductor devices
GB1095413A (en)
US4174252A (en) Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes
GB1453270A (en) Field effect devices
US3447235A (en) Isolated cathode array semiconductor
US4123300A (en) Integrated circuit process utilizing lift-off techniques
JPS6430272A (en) Thin film transistor
GB1179069A (en) Method for manufacturing semiconductor devices.
US3566457A (en) Buried metallic film devices and method of making the same
JPS57204165A (en) Manufacture of charge coupling element
US3658610A (en) Manufacturing method of semiconductor device
JPS5759359A (en) Manufacture of semiconductor device
GB1312464A (en) Method of preventing a chemical reaction between aluminium and silicon dioxide in a semiconductor device
ES365276A1 (en) Metal etching process for semiconductor devices
GB1495377A (en) Method of manufacturing a charge transfer device
GB1348811A (en) Production of schottky contacts
GB1260544A (en) Method for manufacturing semiconductor device
JPS56130940A (en) Manufacture of semiconductor device