JPS57124429A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57124429A
JPS57124429A JP918881A JP918881A JPS57124429A JP S57124429 A JPS57124429 A JP S57124429A JP 918881 A JP918881 A JP 918881A JP 918881 A JP918881 A JP 918881A JP S57124429 A JPS57124429 A JP S57124429A
Authority
JP
Japan
Prior art keywords
impurities
polycrystalline
polycrystalline layer
insulating film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP918881A
Other languages
Japanese (ja)
Inventor
Masafumi Shinpo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP918881A priority Critical patent/JPS57124429A/en
Publication of JPS57124429A publication Critical patent/JPS57124429A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To increase the withstand voltage of the insulating film for the subject semiconductor device by a method wherein a low impurity density polycrystalline thin film is formed on the surface of a polycrystalline thin film containing impurities, and then an insulating film is formed by performing a thermal oxidation. CONSTITUTION:An aperture is opened on the insulating film 4 corresponding to the region 11 on a substrate 10, and a polycrystalline layer 1 containing impurities on the whole surface and a polycrystalline layer 101 containing almost no impurities are deposited. Polycrystalline layers 1 and 101 are remained making a prescribed shape by performing a selective etching, and whole the surface is coated by an oxide film 2 by performing thermal oxidation. The high resistive polycrystalline layer 101 is turned to low resistive by the impurities diffused from the polycrystalline layer 1 in the course of oxidation processing, an aperture is opened on the oxide film 2, and a metal wiring 21 is provided. Accordingly, as the oxide film 2 is formed by a high resistance polycrystalline layer 101 containing almost no impurities, the withstand voltage of the insulating film is increased and the leak current thereon is reduced.
JP918881A 1981-01-23 1981-01-23 Manufacture of semiconductor device Pending JPS57124429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP918881A JPS57124429A (en) 1981-01-23 1981-01-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP918881A JPS57124429A (en) 1981-01-23 1981-01-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57124429A true JPS57124429A (en) 1982-08-03

Family

ID=11713545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP918881A Pending JPS57124429A (en) 1981-01-23 1981-01-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57124429A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6367786A (en) * 1986-09-09 1988-03-26 Fujitsu Ltd Manufacture of semiconductor device
JPS63244685A (en) * 1987-03-30 1988-10-12 Nec Corp Manufacture of semiconductor nonvolatile memory
JPS6459869A (en) * 1987-08-31 1989-03-07 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6367786A (en) * 1986-09-09 1988-03-26 Fujitsu Ltd Manufacture of semiconductor device
JPS63244685A (en) * 1987-03-30 1988-10-12 Nec Corp Manufacture of semiconductor nonvolatile memory
JPS6459869A (en) * 1987-08-31 1989-03-07 Matsushita Electronics Corp Manufacture of semiconductor device

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