JPS5664467A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS5664467A JPS5664467A JP14064379A JP14064379A JPS5664467A JP S5664467 A JPS5664467 A JP S5664467A JP 14064379 A JP14064379 A JP 14064379A JP 14064379 A JP14064379 A JP 14064379A JP S5664467 A JPS5664467 A JP S5664467A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline
- electrode
- films
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To decrease the resistance of source and drain regions by a method wherein electrode patterns with two layer structure consisting of a polycrystalline Si film and a metallic film or a polycrystalline Si film and a metallic silicide film are each formed on the source and drain regions electrically separating the patterns in the MOS type semiconductor device. CONSTITUTION:A thick field oxide film 12 is made up to a fringe section of a p type Si substrate 11, a polycrystalline Si gate electrode 14 by phosphor dope is built up at a center section of the substrate 11 exposing being surrounded by the oxide film through a gate oxide film 16, and the electrode 14 is surrounded by an SiO2 film 15. The whole surface is coated with a polycrystalline Si film 17, impurities are diffused through the film 17, n<+> type source and drain regions 18, 19 are formed into the substrate 11 at both sides of the electrode 14 while the film 17 is also provided with conductivity, the whole surface is covered with an MoSi2 film, a section on the electrode 14 is removed by means of plasma etching, and electrode patterns 21, 22 are obtained which consist of films 171, 201 and 172, 202 in which the polycrystalline films and the MoSi2 films are laminated and each separated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14064379A JPS5664467A (en) | 1979-10-31 | 1979-10-31 | Mos type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14064379A JPS5664467A (en) | 1979-10-31 | 1979-10-31 | Mos type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5664467A true JPS5664467A (en) | 1981-06-01 |
Family
ID=15273434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14064379A Pending JPS5664467A (en) | 1979-10-31 | 1979-10-31 | Mos type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5664467A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62117368A (en) * | 1985-11-15 | 1987-05-28 | Mitsubishi Electric Corp | Semiconductor device |
| JPS63115376A (en) * | 1985-10-30 | 1988-05-19 | ハリス コーポレイション | Mos field effect transistor and manufacture of the same |
| JPH07254701A (en) * | 1994-03-15 | 1995-10-03 | Nec Corp | Semiconductor device and its manufacturing |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5248477A (en) * | 1975-10-16 | 1977-04-18 | Fujitsu Ltd | Process for production of semiconductor device |
| JPS5255379A (en) * | 1975-10-31 | 1977-05-06 | Toshiba Corp | Semiconductor device |
| JPS5286779A (en) * | 1976-01-14 | 1977-07-19 | Hitachi Ltd | Semiconductor device |
| JPS5289464A (en) * | 1976-01-21 | 1977-07-27 | Hitachi Ltd | Semiconductor device |
-
1979
- 1979-10-31 JP JP14064379A patent/JPS5664467A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5248477A (en) * | 1975-10-16 | 1977-04-18 | Fujitsu Ltd | Process for production of semiconductor device |
| JPS5255379A (en) * | 1975-10-31 | 1977-05-06 | Toshiba Corp | Semiconductor device |
| JPS5286779A (en) * | 1976-01-14 | 1977-07-19 | Hitachi Ltd | Semiconductor device |
| JPS5289464A (en) * | 1976-01-21 | 1977-07-27 | Hitachi Ltd | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63115376A (en) * | 1985-10-30 | 1988-05-19 | ハリス コーポレイション | Mos field effect transistor and manufacture of the same |
| JPS62117368A (en) * | 1985-11-15 | 1987-05-28 | Mitsubishi Electric Corp | Semiconductor device |
| JPH07254701A (en) * | 1994-03-15 | 1995-10-03 | Nec Corp | Semiconductor device and its manufacturing |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5688354A (en) | Semiconductor integrated circuit device | |
| JPS5562771A (en) | Integrated circuit device | |
| JPS55154762A (en) | Semiconductor memory | |
| JPS5664467A (en) | Mos type semiconductor device | |
| JPS54161282A (en) | Manufacture of mos semiconductor device | |
| JPS5688358A (en) | Manufacture of semiconductor device | |
| JPS56111264A (en) | Manufacture of semiconductor device | |
| JPS5617039A (en) | Semiconductor device | |
| JPS5632757A (en) | Insulated gate type transistor and integrated circuit | |
| JPS57149774A (en) | Semiconductor device | |
| JPS57194583A (en) | Mos semiconductor device and manufacture thereof | |
| JPS57190362A (en) | Semiconductor device | |
| JPS5513953A (en) | Complementary integrated circuit | |
| JPS5583268A (en) | Complementary mos semiconductor device and method of fabricating the same | |
| JPS5642373A (en) | Manufacture of semiconductor device | |
| JPS5642372A (en) | Manufacture of semiconductor device | |
| JPS57114274A (en) | Electrode for semiconductor device and manufacture thereof | |
| JPS55120170A (en) | Mos type semiconductor device | |
| JPS57170814A (en) | Formation of metallic silicide layer with high melting point | |
| JPS55162270A (en) | Semiconductor device | |
| JPS5645066A (en) | Semiconductor device and manufacture therefor | |
| JPS5466089A (en) | Semiconductor capacitor device | |
| JPS5459875A (en) | Semiconductor device | |
| JPS55158648A (en) | Manufacture of semiconductor device | |
| JPS57103347A (en) | Manufacture of integrated circuit |