JPS55151334A - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device

Info

Publication number
JPS55151334A
JPS55151334A JP6018279A JP6018279A JPS55151334A JP S55151334 A JPS55151334 A JP S55151334A JP 6018279 A JP6018279 A JP 6018279A JP 6018279 A JP6018279 A JP 6018279A JP S55151334 A JPS55151334 A JP S55151334A
Authority
JP
Japan
Prior art keywords
film
substrate
region
approx
annealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6018279A
Other languages
Japanese (ja)
Other versions
JPS5950214B2 (en
Inventor
Masanori Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP54060182A priority Critical patent/JPS5950214B2/en
Publication of JPS55151334A publication Critical patent/JPS55151334A/en
Publication of JPS5950214B2 publication Critical patent/JPS5950214B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current

Abstract

PURPOSE:To obtain an electrode wire having less leakage with low contact resistance by irradiating ion on the metallic layer formed on the substrate when ohmic contacting the metallic layer in the region on the semiconductor substrate. CONSTITUTION:After forming reverse conducting type shallow diffusion region 2 to a silicon substrate 1, an SiO2 film 3 is formed, and an opening is partly formed in the film 3 on the diffused region 2. Then, an Mo film 4 is coated in a thickness of approx. 500Angstrom on the entire surface of the substrate 1, ion is then implanted with Ar to form an Mo-Si alloy layer 5 in the boundary of the Mo and the silicon. Thereafter, the Mo film 6 is further coated in a thickness of approx. 1mum thereon, and photoetched to form a wiring pattern thereon. Finally, it is annealed at 400-600 deg.C to form an electrode thereon. Since the alloy layer is not grown even if the Mo is annealed, no leakage occurs in case of shallow diffusion region 2.
JP54060182A 1979-05-16 1979-05-16 Manufacturing method of semiconductor device Expired JPS5950214B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54060182A JPS5950214B2 (en) 1979-05-16 1979-05-16 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54060182A JPS5950214B2 (en) 1979-05-16 1979-05-16 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55151334A true JPS55151334A (en) 1980-11-25
JPS5950214B2 JPS5950214B2 (en) 1984-12-07

Family

ID=13134753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54060182A Expired JPS5950214B2 (en) 1979-05-16 1979-05-16 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5950214B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832415A (en) * 1981-08-20 1983-02-25 Sanyo Electric Co Ltd Reducing method of contact resistance
US4643777A (en) * 1983-12-20 1987-02-17 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device comprising resistors of high and low resistances
US4699690A (en) * 1985-03-01 1987-10-13 Fujitsu Limited Method of producing semiconductor memory device
US5210042A (en) * 1983-09-26 1993-05-11 Fujitsu Limited Method of producing semiconductor device
US5444024A (en) * 1994-06-10 1995-08-22 Advanced Micro Devices, Inc. Method for low energy implantation of argon to control titanium silicide formation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836981A (en) * 1971-09-13 1973-05-31
JPS5141957A (en) * 1974-10-07 1976-04-08 Nippon Electric Co Handotaisochino denkyokukeiseihoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836981A (en) * 1971-09-13 1973-05-31
JPS5141957A (en) * 1974-10-07 1976-04-08 Nippon Electric Co Handotaisochino denkyokukeiseihoho

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832415A (en) * 1981-08-20 1983-02-25 Sanyo Electric Co Ltd Reducing method of contact resistance
US5210042A (en) * 1983-09-26 1993-05-11 Fujitsu Limited Method of producing semiconductor device
US4643777A (en) * 1983-12-20 1987-02-17 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device comprising resistors of high and low resistances
US4699690A (en) * 1985-03-01 1987-10-13 Fujitsu Limited Method of producing semiconductor memory device
US5444024A (en) * 1994-06-10 1995-08-22 Advanced Micro Devices, Inc. Method for low energy implantation of argon to control titanium silicide formation

Also Published As

Publication number Publication date
JPS5950214B2 (en) 1984-12-07

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