JPS5728367A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5728367A JPS5728367A JP10385380A JP10385380A JPS5728367A JP S5728367 A JPS5728367 A JP S5728367A JP 10385380 A JP10385380 A JP 10385380A JP 10385380 A JP10385380 A JP 10385380A JP S5728367 A JPS5728367 A JP S5728367A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- high resistance
- metallic electrode
- diffusion
- injected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To prepare an element with PIN structure by a method wherein opposite conduction type impurities are introduced selectively onto the surface of a substrate with high resistance, a metallic electrode is formed, the back is ground and removed, the same conduction type impurites are injected to the removed surface and the removed surface is annealed by radiation. CONSTITUTION:An N<+> guard ring layer 3 is diffused and shaped to the N<-> type substrate 1 with high resistance, using an oxide film 2 as a mask, an exposed surface is oxidized again, and a predetermined position of the oxide film 2 is opened and a P<+> diffusion layer 5 is formed. The metallic electrode 6 contacting with the diffusion layer 5 in an ohmic shape is molded, and the back side is removed so that the N<-> layer 1 is formed in fixed thickness through etching. The ions of N type impurities are injected to the removed surface, and changed into an N<+> layer 4a through a method such as annealing by a lasre, a metallic electrode 7 is shaped and a PIN diode is manufactured. Accordingly, since most manufacturing processes of the element containing an I layer (a layer with high resistance) with thickness, which is difficult to be formed through the methods of epitaxial growth or diffusion or the like, can be executed under a condition of a thick water, the semiconductor device can easily be prepared, and a high acceptable ratio can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10385380A JPS5728367A (en) | 1980-07-29 | 1980-07-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10385380A JPS5728367A (en) | 1980-07-29 | 1980-07-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5728367A true JPS5728367A (en) | 1982-02-16 |
Family
ID=14364994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10385380A Pending JPS5728367A (en) | 1980-07-29 | 1980-07-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5728367A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227739A (en) * | 1983-05-21 | 1984-12-21 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Manufacture of optical fiber |
JPS60148113A (en) * | 1984-01-12 | 1985-08-05 | Nec Corp | Manufacture of semiconductor device |
JPS60208868A (en) * | 1984-03-12 | 1985-10-21 | モトローラ・インコーポレーテツド | Low noise zener diode unit and method |
JPS62195180A (en) * | 1986-02-21 | 1987-08-27 | Nec Corp | Manufacture of semiconductor device |
JPH01258476A (en) * | 1988-04-08 | 1989-10-16 | Toshiba Corp | High breakdown voltage semiconductor device and manufacture thereof |
EP0869559A2 (en) * | 1997-04-04 | 1998-10-07 | Siemens Aktiengesellschaft | Leistungsdiode |
US6504178B2 (en) * | 1999-07-02 | 2003-01-07 | Digirad Corporation | Indirect back surface contact to semiconductor devices |
JP2010118674A (en) * | 2010-01-08 | 2010-05-27 | Fuji Electric Systems Co Ltd | Semiconductor device and method of manufacturing the same |
-
1980
- 1980-07-29 JP JP10385380A patent/JPS5728367A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227739A (en) * | 1983-05-21 | 1984-12-21 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Manufacture of optical fiber |
JPH0476936B2 (en) * | 1983-05-21 | 1992-12-07 | Fuiritsupusu Furuuiranpenfuaburiken Nv | |
JPS60148113A (en) * | 1984-01-12 | 1985-08-05 | Nec Corp | Manufacture of semiconductor device |
JPS60208868A (en) * | 1984-03-12 | 1985-10-21 | モトローラ・インコーポレーテツド | Low noise zener diode unit and method |
JPS62195180A (en) * | 1986-02-21 | 1987-08-27 | Nec Corp | Manufacture of semiconductor device |
JPH01258476A (en) * | 1988-04-08 | 1989-10-16 | Toshiba Corp | High breakdown voltage semiconductor device and manufacture thereof |
EP0869559A2 (en) * | 1997-04-04 | 1998-10-07 | Siemens Aktiengesellschaft | Leistungsdiode |
EP0869559A3 (en) * | 1997-04-04 | 1999-01-13 | Siemens Aktiengesellschaft | Leistungsdiode |
US6504178B2 (en) * | 1999-07-02 | 2003-01-07 | Digirad Corporation | Indirect back surface contact to semiconductor devices |
JP2010118674A (en) * | 2010-01-08 | 2010-05-27 | Fuji Electric Systems Co Ltd | Semiconductor device and method of manufacturing the same |
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