JPS57162416A - Fabrication of amorphous silicon schottky junction element - Google Patents

Fabrication of amorphous silicon schottky junction element

Info

Publication number
JPS57162416A
JPS57162416A JP56048036A JP4803681A JPS57162416A JP S57162416 A JPS57162416 A JP S57162416A JP 56048036 A JP56048036 A JP 56048036A JP 4803681 A JP4803681 A JP 4803681A JP S57162416 A JPS57162416 A JP S57162416A
Authority
JP
Japan
Prior art keywords
amorphous silicon
film
impurity
schottky junction
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56048036A
Other languages
Japanese (ja)
Inventor
Mitsuhiko Tashiro
Nobuki Ibaraki
Yoshiko Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56048036A priority Critical patent/JPS57162416A/en
Publication of JPS57162416A publication Critical patent/JPS57162416A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Abstract

PURPOSE:To fabricate amorphous silicon Schottky elements with high reproducibility by a method wherein an amorphous silicon film is deposited on a conductive substrate or film by sputtering with use of a silicon target in which an impurity concentration is gradually faded out and thereon a metal film is deposited. CONSTITUTION:The first amorphous silicon film is formed on a conductive substrate or film by sputtering in an atmosphere containing Ar and H with use of a silicon target containing an impurity with high concentration to constitute an ohmic contact. Next, the second amorphous silicon film is thereon deposited by sputtering with use of a silicon target containing an impurity of the same conductive type in low concentration or no impurity, and further a metal film thereon is laid to constitute a Schottky junction. With this construction, conductivity and conduction-type activating energy of amorphous silicon can be controlled with high reproducibility by an impurity concentration in the target, and further Schottky junction amorphous silicon elements can be fabricated with no use of poisonous gas.
JP56048036A 1981-03-31 1981-03-31 Fabrication of amorphous silicon schottky junction element Pending JPS57162416A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56048036A JPS57162416A (en) 1981-03-31 1981-03-31 Fabrication of amorphous silicon schottky junction element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56048036A JPS57162416A (en) 1981-03-31 1981-03-31 Fabrication of amorphous silicon schottky junction element

Publications (1)

Publication Number Publication Date
JPS57162416A true JPS57162416A (en) 1982-10-06

Family

ID=12792079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56048036A Pending JPS57162416A (en) 1981-03-31 1981-03-31 Fabrication of amorphous silicon schottky junction element

Country Status (1)

Country Link
JP (1) JPS57162416A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5231047A (en) * 1991-12-19 1993-07-27 Energy Conversion Devices, Inc. High quality photovoltaic semiconductor material and laser ablation method of fabrication same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5231047A (en) * 1991-12-19 1993-07-27 Energy Conversion Devices, Inc. High quality photovoltaic semiconductor material and laser ablation method of fabrication same

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