JPS55165689A - Preparation of light emission semiconductor device - Google Patents
Preparation of light emission semiconductor deviceInfo
- Publication number
- JPS55165689A JPS55165689A JP7336979A JP7336979A JPS55165689A JP S55165689 A JPS55165689 A JP S55165689A JP 7336979 A JP7336979 A JP 7336979A JP 7336979 A JP7336979 A JP 7336979A JP S55165689 A JPS55165689 A JP S55165689A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emission
- grown
- region
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000007791 liquid phase Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To improve the efficiency of the light emission by a method wherein a conductivity type compound layer is epitaxially grown on the same conductivity type compound semiconductor substrate in a liquid phase, the supporting layer is laminated on it, the substrate is removed from the element and a reverse conductivity type layer is diffused in the exposed layer in the first stage of the growth to make it a light emission region. CONSTITUTION:When the N-type Ga1-XAlXAs layer 22 is grown on the N-type GaAs substrate 21 in a liquid phase, it is grown to a layer of about 50mum thickness, temperature of the melt is regulated to 900 deg.C, X value to 0.3, and temperature is gradually reduced so that the X value may become 0.1. Next the N-type Ga1-XAlXAs layer 23 that is a mere supporter layer to be the electrode contact is grown to the -100mum thickness, the substrate 21 is removed from the element by the etching method. After this, Zn is diffused in the exposed surface of the layer 22 to form the P-type regions 24 of several mum depth, the light emission region is composed of the layer 22 and the region 24, the surface of region 24 is coated with SiO2 film 25, and the light emission window 25A is opened in the film 25. In this way, the layer in the first stage of the growth, the thickness and X value of which can easily be controlled, is used for the light emission region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7336979A JPS55165689A (en) | 1979-06-11 | 1979-06-11 | Preparation of light emission semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7336979A JPS55165689A (en) | 1979-06-11 | 1979-06-11 | Preparation of light emission semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55165689A true JPS55165689A (en) | 1980-12-24 |
Family
ID=13516187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7336979A Pending JPS55165689A (en) | 1979-06-11 | 1979-06-11 | Preparation of light emission semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55165689A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61141121A (en) * | 1984-12-14 | 1986-06-28 | Showa Denko Kk | Formation of p-n junction |
| JPH01244674A (en) * | 1988-03-26 | 1989-09-29 | Mitsubishi Kasei Corp | Manufacture of blue-light emitting diode |
-
1979
- 1979-06-11 JP JP7336979A patent/JPS55165689A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61141121A (en) * | 1984-12-14 | 1986-06-28 | Showa Denko Kk | Formation of p-n junction |
| JPH01244674A (en) * | 1988-03-26 | 1989-09-29 | Mitsubishi Kasei Corp | Manufacture of blue-light emitting diode |
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