JPS54152483A - Forming method for electrode of compound semiconductor light-emitting element - Google Patents
Forming method for electrode of compound semiconductor light-emitting elementInfo
- Publication number
- JPS54152483A JPS54152483A JP6057178A JP6057178A JPS54152483A JP S54152483 A JPS54152483 A JP S54152483A JP 6057178 A JP6057178 A JP 6057178A JP 6057178 A JP6057178 A JP 6057178A JP S54152483 A JPS54152483 A JP S54152483A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- vapor
- alloy
- type gap
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain excellent ohmic contact and bond-ability by vapor-depositing Au and an Au-Zn alloy and by stacking an Au layer on them when forming an Au- Zn alloy film as the ohmic electrode of a N-type GaP layer.
CONSTITUTION: On N-type GaP substrate 11, N-type GaP layer 11a and P-type GaP layer 12 are stacked and after liquid-crystal epitaxial growth, it is fitted to support 22 inside of vacuum vapor-deposition device 2 evacuated to a degree of vacuum of about 10-5 Torr. Then, Au vaporing source 23, vaporing source 24 for an Au-Zn alloy and Au vaporing source 25 are arranged in device 21 and W heaters 23a and 24a surrounding them vapor Au 23 and Au-Zn alloy 24 to adhere an Au-Zn layer of fixed density onto layer 12 heated up to 200°C. Then, heaters 23a and 24a are turned off to fix the temperature of layer 12 between 50 and 600°C, and heater 25 is put to work to vapor Au 25, so that a thick Au layer will be formed on the Au-Zn layer by adhering. Consequently, Au-Zn electode 14 can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6057178A JPS54152483A (en) | 1978-05-23 | 1978-05-23 | Forming method for electrode of compound semiconductor light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6057178A JPS54152483A (en) | 1978-05-23 | 1978-05-23 | Forming method for electrode of compound semiconductor light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54152483A true JPS54152483A (en) | 1979-11-30 |
Family
ID=13146069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6057178A Pending JPS54152483A (en) | 1978-05-23 | 1978-05-23 | Forming method for electrode of compound semiconductor light-emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54152483A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142633A (en) * | 1980-04-08 | 1981-11-07 | Mitsubishi Electric Corp | Forming method for back electrode of semiconductor wafer |
| JPS57114229A (en) * | 1981-01-07 | 1982-07-16 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of ohmic electrode |
| DE4401858A1 (en) * | 1994-01-22 | 1995-07-27 | Telefunken Microelectron | Forming ohmic contact on p-conductive semiconductor layer |
-
1978
- 1978-05-23 JP JP6057178A patent/JPS54152483A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142633A (en) * | 1980-04-08 | 1981-11-07 | Mitsubishi Electric Corp | Forming method for back electrode of semiconductor wafer |
| JPS57114229A (en) * | 1981-01-07 | 1982-07-16 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of ohmic electrode |
| JPS632135B2 (en) * | 1981-01-07 | 1988-01-18 | Nippon Telegraph & Telephone | |
| DE4401858A1 (en) * | 1994-01-22 | 1995-07-27 | Telefunken Microelectron | Forming ohmic contact on p-conductive semiconductor layer |
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