JPS57117283A - 3-5 group compound semiconductor device - Google Patents

3-5 group compound semiconductor device

Info

Publication number
JPS57117283A
JPS57117283A JP449481A JP449481A JPS57117283A JP S57117283 A JPS57117283 A JP S57117283A JP 449481 A JP449481 A JP 449481A JP 449481 A JP449481 A JP 449481A JP S57117283 A JPS57117283 A JP S57117283A
Authority
JP
Japan
Prior art keywords
layer
film
tin
ohmic contact
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP449481A
Other languages
Japanese (ja)
Other versions
JPS6244836B2 (en
Inventor
Katsumi Tsujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP449481A priority Critical patent/JPS57117283A/en
Priority to NLAANVRAGE8200038,A priority patent/NL186354C/en
Priority to DE19823200788 priority patent/DE3200788A1/en
Publication of JPS57117283A publication Critical patent/JPS57117283A/en
Priority to US06/681,710 priority patent/US4553154A/en
Publication of JPS6244836B2 publication Critical patent/JPS6244836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

PURPOSE:To make better the ohmic contact and wire bonding property by a method wherein an Au-Be layer is provided as an electrode, and an Al layer is provided on the layer thereof interposing middle layers of a TiN layer, etc., between them. CONSTITUTION:An N type GaP layer 11, P type GaP layer 12 are made to grow on an N type GaP substrate 10 by liquid phase epitaxial growth method to form a P-N junction 13. Then Au-Si films 19 are formed on the rear as the electrodes on the N side, and an Au-Be film 14, a TiN film 15, a Ti film 16, a TiN film 17 and the Al film 18 are accumulated in order on the surface of the P type layer by the sputtering method. Accordingly because the middle layers of the TiN-Ti-TiN layers act as the barrier to prevent diffusion of Au, Be to be generated when the heat treatment to obtain ohmic contact is to be performed and Ga in the GaP substrate into the surface of electrode, mixing of impurities into the Al film on the surface is not generated, and alloying of GaP and Au-Be being necessary to obtain favorable ohmic contact can be performed stably.
JP449481A 1981-01-13 1981-01-13 3-5 group compound semiconductor device Granted JPS57117283A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP449481A JPS57117283A (en) 1981-01-13 1981-01-13 3-5 group compound semiconductor device
NLAANVRAGE8200038,A NL186354C (en) 1981-01-13 1982-01-07 SEMICONDUCTOR DEVICE COMPRISING III-V CONNECTIONS WITH A COMPOSITE ELECTRODE.
DE19823200788 DE3200788A1 (en) 1981-01-13 1982-01-13 ELECTRODE FOR SEMICONDUCTOR COMPONENTS
US06/681,710 US4553154A (en) 1981-01-13 1984-12-13 Light emitting diode electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP449481A JPS57117283A (en) 1981-01-13 1981-01-13 3-5 group compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS57117283A true JPS57117283A (en) 1982-07-21
JPS6244836B2 JPS6244836B2 (en) 1987-09-22

Family

ID=11585622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP449481A Granted JPS57117283A (en) 1981-01-13 1981-01-13 3-5 group compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS57117283A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0463480A (en) * 1990-07-02 1992-02-28 Sharp Corp Group iii-v compound semiconductor device
JP2008098336A (en) * 2006-10-11 2008-04-24 Stanley Electric Co Ltd Semiconductor light emitting element, and its manufacturing method
JP2020202350A (en) * 2019-06-13 2020-12-17 ローム株式会社 Semiconductor light emitting device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411689A (en) * 1977-06-28 1979-01-27 Toshiba Corp Light emitting element of gallium phosphide
JPS5575276A (en) * 1978-12-02 1980-06-06 Sharp Corp 3[5 group compound semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411689A (en) * 1977-06-28 1979-01-27 Toshiba Corp Light emitting element of gallium phosphide
JPS5575276A (en) * 1978-12-02 1980-06-06 Sharp Corp 3[5 group compound semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0463480A (en) * 1990-07-02 1992-02-28 Sharp Corp Group iii-v compound semiconductor device
JP2008098336A (en) * 2006-10-11 2008-04-24 Stanley Electric Co Ltd Semiconductor light emitting element, and its manufacturing method
JP2020202350A (en) * 2019-06-13 2020-12-17 ローム株式会社 Semiconductor light emitting device

Also Published As

Publication number Publication date
JPS6244836B2 (en) 1987-09-22

Similar Documents

Publication Publication Date Title
CH628463A5 (en) LIGHT-EMITTING SEMICONDUCTOR DEVICE.
ATE161361T1 (en) EPITACTIC OHMS CONTACT FOR INTEGRATED HETEROSTRUCTURE OF II-VI SEMICONDUCTOR MATERIALS AND METHOD FOR PRODUCING IT
JPS57117283A (en) 3-5 group compound semiconductor device
JPS57117284A (en) 3-5 group compound semiconductor device
JPS54146984A (en) Luminous element
GB1197315A (en) Semiconductor Device
JPS5348670A (en) Electrode structure of semiconductor element
JPS54156493A (en) Forming method of compound semiconductor light emitting element electrode
JPS56112761A (en) Manufacture of 3-5 group element semiconductor device
JPS54152483A (en) Forming method for electrode of compound semiconductor light-emitting element
JPS5790979A (en) Fabrication of semiconductor device
JPS5571080A (en) Preparation of electrode for compound semiconductor luminous element
JPS54162457A (en) Electrode forming method for semiconductor element
JPS56144559A (en) Compound semiconductor element
JPS5553466A (en) Photoelectricity transformer
JPS5575276A (en) 3[5 group compound semiconductor device
JPS57157591A (en) Semiconductor laser element
JPS56120174A (en) Semiconductor luminous element of 3-5 group compound and its preparing method
JPS54152876A (en) Manufacture of optical semiconductor device
JPS574155A (en) Semiconductor device
JPS551146A (en) Method of forming electrode in semiconductor crystal of 3-5 group compound
JPS5615086A (en) Photoelectric converting device
JPS5712564A (en) Semiconductor device
JPS54152486A (en) Electrode forming method for gallium phosphide light- emitting diode
JPS54134586A (en) Production of solar battery using compound semiconductor crystal