JPS56144559A - Compound semiconductor element - Google Patents

Compound semiconductor element

Info

Publication number
JPS56144559A
JPS56144559A JP4705680A JP4705680A JPS56144559A JP S56144559 A JPS56144559 A JP S56144559A JP 4705680 A JP4705680 A JP 4705680A JP 4705680 A JP4705680 A JP 4705680A JP S56144559 A JPS56144559 A JP S56144559A
Authority
JP
Japan
Prior art keywords
layer
alloy
film
main body
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4705680A
Other languages
Japanese (ja)
Inventor
Hirohisa Abe
Yasuo Josa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4705680A priority Critical patent/JPS56144559A/en
Publication of JPS56144559A publication Critical patent/JPS56144559A/en
Pending legal-status Critical Current

Links

Classifications

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain an electrode suitable for bonding by laminating on the main body surface of a compound semiconductor element, an Au alloy film which is brought into ohmic contact therewith, a barrier metal layer and an Al film. CONSTITUTION:On an N type GaP11, an N layer 12 is laminated by adding Te and thereon, a P layer 13 is laminated by adding Zn and O to form a main body 14. An AuZu alloy 16 is formed on the layer 13, and an AuGe alloy 15 on the layer 11. Then, on the alloy film 16, Ta17 and Al18 are piled to form an electrode pattern 19, and this is treated in Ar at 520 deg.C for approximately five minutes in order to bring the Au alloy films 16 and 15 into ohmic contact with the main body 14. Then, the alloy film 15 is secured to a lead frame 22 by using a conductive resin 21, and an Au wire 20 is bonded to the Al film 18. Then, this is properly sealed with resin. In the electrode 19 formed by said constitution, the barrier metal layer 17 restrains the diffusion into the Au alloy 16 and moreover, the Al18 restrains the Zn and Ga having diffused into the layer 17, so that the deterioration of the bonding efficiency is prevented. W, Ti, Mo, Ni and alloys thereof are effective for the layer 17, besides Ta.
JP4705680A 1980-04-10 1980-04-10 Compound semiconductor element Pending JPS56144559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4705680A JPS56144559A (en) 1980-04-10 1980-04-10 Compound semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4705680A JPS56144559A (en) 1980-04-10 1980-04-10 Compound semiconductor element

Publications (1)

Publication Number Publication Date
JPS56144559A true JPS56144559A (en) 1981-11-10

Family

ID=12764493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4705680A Pending JPS56144559A (en) 1980-04-10 1980-04-10 Compound semiconductor element

Country Status (1)

Country Link
JP (1) JPS56144559A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941867A (en) * 1982-03-31 1984-03-08 Anritsu Corp Electrode and forming method thereof
KR100327060B1 (en) * 1998-01-16 2002-08-21 미쓰비시덴키 가부시키가이샤 Electrode for dielectric thin film element and its manufacturing method and ultrasonic vibrator using same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110460A (en) * 1977-03-09 1978-09-27 Toshiba Corp Electrode of compound semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110460A (en) * 1977-03-09 1978-09-27 Toshiba Corp Electrode of compound semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941867A (en) * 1982-03-31 1984-03-08 Anritsu Corp Electrode and forming method thereof
KR100327060B1 (en) * 1998-01-16 2002-08-21 미쓰비시덴키 가부시키가이샤 Electrode for dielectric thin film element and its manufacturing method and ultrasonic vibrator using same

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