JPS571241A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS571241A
JPS571241A JP7371980A JP7371980A JPS571241A JP S571241 A JPS571241 A JP S571241A JP 7371980 A JP7371980 A JP 7371980A JP 7371980 A JP7371980 A JP 7371980A JP S571241 A JPS571241 A JP S571241A
Authority
JP
Japan
Prior art keywords
si
alloy
metal
used
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7371980A
Inventor
Norio Iida
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP7371980A priority Critical patent/JPS571241A/en
Publication of JPS571241A publication Critical patent/JPS571241A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE:To prevent disconnection to be caused by electrolytic corrosion and to enhance reliability of an integrated circuit device having a shallow junction by a method wherein an Al alloy being added with a metal having smaller ionizing tendency than Al and Si is used for a metal wiring region between elements or in the elements of a semiconductor substrate. CONSTITUTION:For example, at the device having a transistor being formed shallow with an emitter diffusion layer 7, the Al alloy is used for the electrode and wiring regions 10. This alloy is consisted of Al containing at least 0.1wt% of a metal having smaller ionizing tendency than Al and 10wt% or less of Si. As the metal to be added other than Si, one of Zn, ti, Zr, Mn, Cr, Fe, Cd, In, Co, Ni, Mo, Pb, Cu, Ag, Pd, Pt, Au, or assembling thereof, is used to form the alloy. Accordingly cathodic corrosion can be prevented, corrosion resistance can be enhanced, and short-circuit to be caused by thrusting through junction can be prevented by addition of Si, and reliability can be enhanced.
JP7371980A 1980-06-03 1980-06-03 Integrated circuit device Pending JPS571241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7371980A JPS571241A (en) 1980-06-03 1980-06-03 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7371980A JPS571241A (en) 1980-06-03 1980-06-03 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPS571241A true JPS571241A (en) 1982-01-06

Family

ID=13526307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7371980A Pending JPS571241A (en) 1980-06-03 1980-06-03 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS571241A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108348A (en) * 1982-12-01 1984-06-22 Siemens Ag Integrated semiconductor circuit
JPS6039866A (en) * 1983-07-20 1985-03-01 Siemens Ag Integrated semiconductor circuit
JPS6132444A (en) * 1984-07-24 1986-02-15 Hitachi Ltd Ic device
JPS62114241A (en) * 1985-11-14 1987-05-26 Fujitsu Ltd Semiconductor device
JPS62281354A (en) * 1986-05-29 1987-12-07 Mitsubishi Electric Corp Semiconductor device
JPS63263744A (en) * 1987-04-22 1988-10-31 Nec Corp Aluminum alloy thin film wiring
JPH01134426A (en) * 1987-11-20 1989-05-26 Hitachi Ltd Thin film transistor for driving liquid crystal display
JPH01140768A (en) * 1987-11-27 1989-06-01 Sony Corp Semiconductor device
EP0425162A2 (en) * 1989-10-25 1991-05-02 AT&T Corp. Improved aluminum metallization for semiconductor devices
US6146579A (en) * 1997-05-27 2000-11-14 Sumitomo Chemical Co., Ltd. Process for producing thermoplastic resin hollow molded article
EP1138076A4 (en) * 1999-05-12 2005-01-26 Koninkl Philips Electronics Nv Methods and compositions for improving interconnect metallization performance in integrated circuits

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108348A (en) * 1982-12-01 1984-06-22 Siemens Ag Integrated semiconductor circuit
JPS6039866A (en) * 1983-07-20 1985-03-01 Siemens Ag Integrated semiconductor circuit
JPS6132444A (en) * 1984-07-24 1986-02-15 Hitachi Ltd Ic device
JPS62114241A (en) * 1985-11-14 1987-05-26 Fujitsu Ltd Semiconductor device
JPS62281354A (en) * 1986-05-29 1987-12-07 Mitsubishi Electric Corp Semiconductor device
JPS63263744A (en) * 1987-04-22 1988-10-31 Nec Corp Aluminum alloy thin film wiring
JPH01134426A (en) * 1987-11-20 1989-05-26 Hitachi Ltd Thin film transistor for driving liquid crystal display
JPH01140768A (en) * 1987-11-27 1989-06-01 Sony Corp Semiconductor device
EP0425162A2 (en) * 1989-10-25 1991-05-02 AT&T Corp. Improved aluminum metallization for semiconductor devices
US6146579A (en) * 1997-05-27 2000-11-14 Sumitomo Chemical Co., Ltd. Process for producing thermoplastic resin hollow molded article
EP1138076A4 (en) * 1999-05-12 2005-01-26 Koninkl Philips Electronics Nv Methods and compositions for improving interconnect metallization performance in integrated circuits

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