JPS5768022A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS5768022A
JPS5768022A JP14288480A JP14288480A JPS5768022A JP S5768022 A JPS5768022 A JP S5768022A JP 14288480 A JP14288480 A JP 14288480A JP 14288480 A JP14288480 A JP 14288480A JP S5768022 A JPS5768022 A JP S5768022A
Authority
JP
Japan
Prior art keywords
layer
thin layer
thick
crystal
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14288480A
Other languages
Japanese (ja)
Inventor
Yoshimoto Fujita
Yasuhiro Ishii
Noriyuki Shimano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP14288480A priority Critical patent/JPS5768022A/en
Publication of JPS5768022A publication Critical patent/JPS5768022A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain an electrode having microminiature pattern without lateral expansion by forming a laminar structure in which an Ni thin layer and an Au-Ge eutectic alloy thin layer as well as an Ni thin layer are laminated when an electrode is provided on the N type or N<+> type GaAs crystalline surface, and then heat treating it as ohmic contact part. CONSTITUTION:An Ni thin film 12 of 30-150Angstrom thick, an Au-Ge eutectic alloy thin layer 13 of 1,000-2,000Angstrom thick and 88:12 of Au:Ge and an Ni thin layer 14 of 200-400Angstrom thick are sequentially laminated and deposited in vaccum on the surface of N type or N<+> type GaAs crystal 11. Thereafter, it is heat treated at 350- 425 deg.C for 5min, thereby producing a preferably ohmic contact with the crystal 11. In this manner, when the layer 13 is in molten state, the layer 12 prevents the contact of the layer 13 with the crystal 11, a part of the Ni of the layers 12, 14 is dissolved in the layer 13 to raise the melting point of the layer 13, and the solution reaction of the Ni can be suppressed.
JP14288480A 1980-10-15 1980-10-15 Manufacture of compound semiconductor device Pending JPS5768022A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14288480A JPS5768022A (en) 1980-10-15 1980-10-15 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14288480A JPS5768022A (en) 1980-10-15 1980-10-15 Manufacture of compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5768022A true JPS5768022A (en) 1982-04-26

Family

ID=15325827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14288480A Pending JPS5768022A (en) 1980-10-15 1980-10-15 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5768022A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS641230A (en) * 1987-06-23 1989-01-05 Mitsubishi Electric Corp Formation of ohmic electrode
US5358899A (en) * 1991-10-25 1994-10-25 International Business Machines Corporation Oxygen assisted ohmic contact formation to n-type gallium arsenide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS641230A (en) * 1987-06-23 1989-01-05 Mitsubishi Electric Corp Formation of ohmic electrode
US5358899A (en) * 1991-10-25 1994-10-25 International Business Machines Corporation Oxygen assisted ohmic contact formation to n-type gallium arsenide

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