JPS5469977A - Forming method of electrodes for compound semiconducror light emitting elements - Google Patents

Forming method of electrodes for compound semiconducror light emitting elements

Info

Publication number
JPS5469977A
JPS5469977A JP13660477A JP13660477A JPS5469977A JP S5469977 A JPS5469977 A JP S5469977A JP 13660477 A JP13660477 A JP 13660477A JP 13660477 A JP13660477 A JP 13660477A JP S5469977 A JPS5469977 A JP S5469977A
Authority
JP
Japan
Prior art keywords
light emitting
layer
electrodes
semiconducror
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13660477A
Other languages
Japanese (ja)
Inventor
Katsuhiko Kawakita
Masako Nakabashi
Yoshiyasu Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13660477A priority Critical patent/JPS5469977A/en
Publication of JPS5469977A publication Critical patent/JPS5469977A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Abstract

PURPOSE: To improve the ohmic contact between a light emitting element body and a metal by making the temperature of the body 100°C to 250°C at the time of e vaporating the metal and gold-zinc alloy layer on the required portions of the p type compound semiconductor layer of the light emitting element body.
CONSTITUTION: An n type GaP 11a and p type GaP layer 12 are subsequently formed on an n type GaP crystal substrate 11 to form a p-n junction 13, whereby the element body is obtained. An Au thin layer 24 is evaporated on said p type layer 13 side, and an Au-Zu alloy layer 24a is evaporated thereon. At this time, the body is made within a temperature range of 100°C to 250°C. The electrodes 24, 24a having been obtained in this way provide good ohmic contact and yet the bondability of the lead wire 14b is stable.
COPYRIGHT: (C)1979,JPO&Japio
JP13660477A 1977-11-16 1977-11-16 Forming method of electrodes for compound semiconducror light emitting elements Pending JPS5469977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13660477A JPS5469977A (en) 1977-11-16 1977-11-16 Forming method of electrodes for compound semiconducror light emitting elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13660477A JPS5469977A (en) 1977-11-16 1977-11-16 Forming method of electrodes for compound semiconducror light emitting elements

Publications (1)

Publication Number Publication Date
JPS5469977A true JPS5469977A (en) 1979-06-05

Family

ID=15179172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13660477A Pending JPS5469977A (en) 1977-11-16 1977-11-16 Forming method of electrodes for compound semiconducror light emitting elements

Country Status (1)

Country Link
JP (1) JPS5469977A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100446284C (en) * 1993-04-28 2008-12-24 日亚化学工业株式会社 Method for producing gallium nitride based III-V group compound semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100446284C (en) * 1993-04-28 2008-12-24 日亚化学工业株式会社 Method for producing gallium nitride based III-V group compound semiconductor device

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