JPS5469977A - Forming method of electrodes for compound semiconducror light emitting elements - Google Patents
Forming method of electrodes for compound semiconducror light emitting elementsInfo
- Publication number
- JPS5469977A JPS5469977A JP13660477A JP13660477A JPS5469977A JP S5469977 A JPS5469977 A JP S5469977A JP 13660477 A JP13660477 A JP 13660477A JP 13660477 A JP13660477 A JP 13660477A JP S5469977 A JPS5469977 A JP S5469977A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- electrodes
- semiconducror
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To improve the ohmic contact between a light emitting element body and a metal by making the temperature of the body 100°C to 250°C at the time of e vaporating the metal and gold-zinc alloy layer on the required portions of the p type compound semiconductor layer of the light emitting element body.
CONSTITUTION: An n type GaP 11a and p type GaP layer 12 are subsequently formed on an n type GaP crystal substrate 11 to form a p-n junction 13, whereby the element body is obtained. An Au thin layer 24 is evaporated on said p type layer 13 side, and an Au-Zu alloy layer 24a is evaporated thereon. At this time, the body is made within a temperature range of 100°C to 250°C. The electrodes 24, 24a having been obtained in this way provide good ohmic contact and yet the bondability of the lead wire 14b is stable.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13660477A JPS5469977A (en) | 1977-11-16 | 1977-11-16 | Forming method of electrodes for compound semiconducror light emitting elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13660477A JPS5469977A (en) | 1977-11-16 | 1977-11-16 | Forming method of electrodes for compound semiconducror light emitting elements |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5469977A true JPS5469977A (en) | 1979-06-05 |
Family
ID=15179172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13660477A Pending JPS5469977A (en) | 1977-11-16 | 1977-11-16 | Forming method of electrodes for compound semiconducror light emitting elements |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5469977A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100446284C (en) * | 1993-04-28 | 2008-12-24 | 日亚化学工业株式会社 | Method for producing gallium nitride based III-V group compound semiconductor device |
-
1977
- 1977-11-16 JP JP13660477A patent/JPS5469977A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100446284C (en) * | 1993-04-28 | 2008-12-24 | 日亚化学工业株式会社 | Method for producing gallium nitride based III-V group compound semiconductor device |
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