JPS5469975A - Production of compound semiconductor light emitting elements - Google Patents

Production of compound semiconductor light emitting elements

Info

Publication number
JPS5469975A
JPS5469975A JP13660277A JP13660277A JPS5469975A JP S5469975 A JPS5469975 A JP S5469975A JP 13660277 A JP13660277 A JP 13660277A JP 13660277 A JP13660277 A JP 13660277A JP S5469975 A JPS5469975 A JP S5469975A
Authority
JP
Japan
Prior art keywords
layer
gap
compound semiconductor
gold
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13660277A
Other languages
Japanese (ja)
Inventor
Yoshiyasu Koike
Kisaku Nakamura
Noburo Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13660277A priority Critical patent/JPS5469975A/en
Publication of JPS5469975A publication Critical patent/JPS5469975A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain ohmic contact with P type layer with good reliability by forming a metal mainly composed of Au on the P type layer of a compound semiconductor crystal then laminating a gold-zinc alloy layer thereon.
CONSTITUTION: A metal layer 22 composed of Au or a gold alloy mainly composed of Au is formed on the P type layer of a compound semiconductor crystal 21 such as GaP crysta 1, and a gold-zinc alloy layer 23 is laminated on the layer 22, after which the entire part is heat-treated. The layer 22 causes Au and GaP to react to form an AuGa alloy, producing holes in the Ga lattice points in the GaP crystal lattice. Thereafter, Au-Zn is laminated and further heat treatment is performed, whereby Zn is diffused in GaP, at which time the diffusion becomes easy owing to the presence of the holes. Further, positioning of Zn in these holes enables ohmic contact to be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP13660277A 1977-11-16 1977-11-16 Production of compound semiconductor light emitting elements Pending JPS5469975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13660277A JPS5469975A (en) 1977-11-16 1977-11-16 Production of compound semiconductor light emitting elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13660277A JPS5469975A (en) 1977-11-16 1977-11-16 Production of compound semiconductor light emitting elements

Publications (1)

Publication Number Publication Date
JPS5469975A true JPS5469975A (en) 1979-06-05

Family

ID=15179127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13660277A Pending JPS5469975A (en) 1977-11-16 1977-11-16 Production of compound semiconductor light emitting elements

Country Status (1)

Country Link
JP (1) JPS5469975A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471005A (en) * 1983-01-24 1984-09-11 At&T Bell Laboratories Ohmic contact to p-type Group III-V semiconductors
US4816881A (en) * 1985-06-27 1989-03-28 United State Of America As Represented By The Secretary Of The Navy A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
EP0584599A1 (en) * 1992-08-28 1994-03-02 Siemens Aktiengesellschaft Light-emitting diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471005A (en) * 1983-01-24 1984-09-11 At&T Bell Laboratories Ohmic contact to p-type Group III-V semiconductors
US4816881A (en) * 1985-06-27 1989-03-28 United State Of America As Represented By The Secretary Of The Navy A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
EP0584599A1 (en) * 1992-08-28 1994-03-02 Siemens Aktiengesellschaft Light-emitting diode
US5614736A (en) * 1992-08-28 1997-03-25 Siemens Aktiengesellschaft Gallium phosphate light emitting diode with zinc-doped contact

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