JPS5469975A - Production of compound semiconductor light emitting elements - Google Patents
Production of compound semiconductor light emitting elementsInfo
- Publication number
- JPS5469975A JPS5469975A JP13660277A JP13660277A JPS5469975A JP S5469975 A JPS5469975 A JP S5469975A JP 13660277 A JP13660277 A JP 13660277A JP 13660277 A JP13660277 A JP 13660277A JP S5469975 A JPS5469975 A JP S5469975A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gap
- compound semiconductor
- gold
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain ohmic contact with P type layer with good reliability by forming a metal mainly composed of Au on the P type layer of a compound semiconductor crystal then laminating a gold-zinc alloy layer thereon.
CONSTITUTION: A metal layer 22 composed of Au or a gold alloy mainly composed of Au is formed on the P type layer of a compound semiconductor crystal 21 such as GaP crysta 1, and a gold-zinc alloy layer 23 is laminated on the layer 22, after which the entire part is heat-treated. The layer 22 causes Au and GaP to react to form an AuGa alloy, producing holes in the Ga lattice points in the GaP crystal lattice. Thereafter, Au-Zn is laminated and further heat treatment is performed, whereby Zn is diffused in GaP, at which time the diffusion becomes easy owing to the presence of the holes. Further, positioning of Zn in these holes enables ohmic contact to be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13660277A JPS5469975A (en) | 1977-11-16 | 1977-11-16 | Production of compound semiconductor light emitting elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13660277A JPS5469975A (en) | 1977-11-16 | 1977-11-16 | Production of compound semiconductor light emitting elements |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5469975A true JPS5469975A (en) | 1979-06-05 |
Family
ID=15179127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13660277A Pending JPS5469975A (en) | 1977-11-16 | 1977-11-16 | Production of compound semiconductor light emitting elements |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5469975A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4471005A (en) * | 1983-01-24 | 1984-09-11 | At&T Bell Laboratories | Ohmic contact to p-type Group III-V semiconductors |
US4816881A (en) * | 1985-06-27 | 1989-03-28 | United State Of America As Represented By The Secretary Of The Navy | A TiW diffusion barrier for AuZn ohmic contacts to p-type InP |
EP0584599A1 (en) * | 1992-08-28 | 1994-03-02 | Siemens Aktiengesellschaft | Light-emitting diode |
-
1977
- 1977-11-16 JP JP13660277A patent/JPS5469975A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4471005A (en) * | 1983-01-24 | 1984-09-11 | At&T Bell Laboratories | Ohmic contact to p-type Group III-V semiconductors |
US4816881A (en) * | 1985-06-27 | 1989-03-28 | United State Of America As Represented By The Secretary Of The Navy | A TiW diffusion barrier for AuZn ohmic contacts to p-type InP |
EP0584599A1 (en) * | 1992-08-28 | 1994-03-02 | Siemens Aktiengesellschaft | Light-emitting diode |
US5614736A (en) * | 1992-08-28 | 1997-03-25 | Siemens Aktiengesellschaft | Gallium phosphate light emitting diode with zinc-doped contact |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56160034A (en) | Impurity diffusion | |
JPS559442A (en) | Light emission element and its manufacturing method | |
JPS5469975A (en) | Production of compound semiconductor light emitting elements | |
JPS5411689A (en) | Light emitting element of gallium phosphide | |
JPS5493380A (en) | Semiconductor light emitting device | |
JPS5578580A (en) | Manufacture of semiconductor light-emitting diode | |
JPS53148394A (en) | Manufacture of semiconductor device | |
JPS5469978A (en) | Production of compound semiconductor light emitting elements | |
JPS5296878A (en) | Manufacture of semiconductor laser element | |
JPS5376688A (en) | Production of semiconductor device | |
JPS5469977A (en) | Forming method of electrodes for compound semiconducror light emitting elements | |
JPS52129390A (en) | Production of semiconductor light emitting element | |
JPS5456766A (en) | Semiconductor device | |
JPS5263088A (en) | Production of gaas light emitting diode | |
JPS5437098A (en) | Method of producing gallium phosphide greenish luminous element | |
JPS577982A (en) | Manufacture of light emitting element | |
JPS5555526A (en) | Method of manufacturing electrode | |
JPS5469980A (en) | Production of compound semiconductor light emitting elements | |
JPS57166088A (en) | Electrode of luminus diode | |
JPS5361274A (en) | Production of high frequency semiconductor devce | |
JPS5263067A (en) | Production of semiconductor device | |
JPS539492A (en) | Gallium phosphide light emitting diode device | |
JPS52122080A (en) | Forming methods of ohmic electrodes | |
JPS5367392A (en) | Semiconductor light emitting device | |
JPS51117888A (en) | Manufacturing method of gallium phosphide green led |