JPS5563880A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5563880A
JPS5563880A JP13695478A JP13695478A JPS5563880A JP S5563880 A JPS5563880 A JP S5563880A JP 13695478 A JP13695478 A JP 13695478A JP 13695478 A JP13695478 A JP 13695478A JP S5563880 A JPS5563880 A JP S5563880A
Authority
JP
Japan
Prior art keywords
schottky
metal
evaporated
insulating layer
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13695478A
Other languages
Japanese (ja)
Inventor
Noboru Deguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13695478A priority Critical patent/JPS5563880A/en
Publication of JPS5563880A publication Critical patent/JPS5563880A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To raise the yield of bonding of a wire on a Schottky metal electrode of a semiconductor device having a Schottky barrier, by using a titanium layer as a mask to plate gold on the Schottky metal electrode.
CONSTITUTION: To manufacture a GaAs Schottky varactor diode, an insulating layer 12 is firstly produced on the entire surface of a semiconductor substrate of one electroconductive type. A part of the insulating layer 12 is selectively removed. A metal 13 for making a Schottky barrier in cooperation with the semiconductor substrate is evaporated in the removal opening of the insulating layer. Gold 14 is evaporated on the metal 13. Another part of the insulating layer 12 is removed to a prescribed thickness. A metal is evaporated in the latter removal opening. Titanium 17 is evaporated except on the Schottky metal 13. The titanium 17 is used as a mask to plate gold 18. The titanium layer is then removed. The thickness of the Schottky electrode is thus increased. This prevents the contact of a bonded wire with the semiconductor substrate.
COPYRIGHT: (C)1980,JPO&Japio
JP13695478A 1978-11-07 1978-11-07 Manufacturing method of semiconductor device Pending JPS5563880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13695478A JPS5563880A (en) 1978-11-07 1978-11-07 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13695478A JPS5563880A (en) 1978-11-07 1978-11-07 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5563880A true JPS5563880A (en) 1980-05-14

Family

ID=15187381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13695478A Pending JPS5563880A (en) 1978-11-07 1978-11-07 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5563880A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5408987A (en) * 1992-02-12 1995-04-25 Tokai Corporation Portable heater

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5408987A (en) * 1992-02-12 1995-04-25 Tokai Corporation Portable heater

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