JPS5563880A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS5563880A JPS5563880A JP13695478A JP13695478A JPS5563880A JP S5563880 A JPS5563880 A JP S5563880A JP 13695478 A JP13695478 A JP 13695478A JP 13695478 A JP13695478 A JP 13695478A JP S5563880 A JPS5563880 A JP S5563880A
- Authority
- JP
- Japan
- Prior art keywords
- schottky
- metal
- evaporated
- insulating layer
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To raise the yield of bonding of a wire on a Schottky metal electrode of a semiconductor device having a Schottky barrier, by using a titanium layer as a mask to plate gold on the Schottky metal electrode.
CONSTITUTION: To manufacture a GaAs Schottky varactor diode, an insulating layer 12 is firstly produced on the entire surface of a semiconductor substrate of one electroconductive type. A part of the insulating layer 12 is selectively removed. A metal 13 for making a Schottky barrier in cooperation with the semiconductor substrate is evaporated in the removal opening of the insulating layer. Gold 14 is evaporated on the metal 13. Another part of the insulating layer 12 is removed to a prescribed thickness. A metal is evaporated in the latter removal opening. Titanium 17 is evaporated except on the Schottky metal 13. The titanium 17 is used as a mask to plate gold 18. The titanium layer is then removed. The thickness of the Schottky electrode is thus increased. This prevents the contact of a bonded wire with the semiconductor substrate.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13695478A JPS5563880A (en) | 1978-11-07 | 1978-11-07 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13695478A JPS5563880A (en) | 1978-11-07 | 1978-11-07 | Manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5563880A true JPS5563880A (en) | 1980-05-14 |
Family
ID=15187381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13695478A Pending JPS5563880A (en) | 1978-11-07 | 1978-11-07 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5563880A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408987A (en) * | 1992-02-12 | 1995-04-25 | Tokai Corporation | Portable heater |
-
1978
- 1978-11-07 JP JP13695478A patent/JPS5563880A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408987A (en) * | 1992-02-12 | 1995-04-25 | Tokai Corporation | Portable heater |
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