JPS546476A - Manufacture for schottky barrier field effect transistor - Google Patents

Manufacture for schottky barrier field effect transistor

Info

Publication number
JPS546476A
JPS546476A JP7259577A JP7259577A JPS546476A JP S546476 A JPS546476 A JP S546476A JP 7259577 A JP7259577 A JP 7259577A JP 7259577 A JP7259577 A JP 7259577A JP S546476 A JPS546476 A JP S546476A
Authority
JP
Japan
Prior art keywords
schottky barrier
manufacture
field effect
effect transistor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7259577A
Other languages
Japanese (ja)
Inventor
Hisashi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP7259577A priority Critical patent/JPS546476A/en
Publication of JPS546476A publication Critical patent/JPS546476A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To extremely reduce the electrode distance and to increase the oscillated frequency, by growing epitaxial layer on a semi-insulation semiconductor substrate, providing a schottky barrier metallic layer on it, shallowering the opitaxial layer not covered with the metallic layer with etching and producing step, and providing ohmic electrodes on the metallic layer and the epitaxial layer respectively.
COPYRIGHT: (C)1979,JPO&Japio
JP7259577A 1977-06-16 1977-06-16 Manufacture for schottky barrier field effect transistor Pending JPS546476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7259577A JPS546476A (en) 1977-06-16 1977-06-16 Manufacture for schottky barrier field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7259577A JPS546476A (en) 1977-06-16 1977-06-16 Manufacture for schottky barrier field effect transistor

Publications (1)

Publication Number Publication Date
JPS546476A true JPS546476A (en) 1979-01-18

Family

ID=13493901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7259577A Pending JPS546476A (en) 1977-06-16 1977-06-16 Manufacture for schottky barrier field effect transistor

Country Status (1)

Country Link
JP (1) JPS546476A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031225A (en) * 1983-08-01 1985-02-18 Nippon Telegr & Teleph Corp <Ntt> Charged beam exposure device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031225A (en) * 1983-08-01 1985-02-18 Nippon Telegr & Teleph Corp <Ntt> Charged beam exposure device
JPH0542808B2 (en) * 1983-08-01 1993-06-29 Nippon Telegraph & Telephone

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