JPS5365671A - Schottky barrier semiconductor device and its manufacture - Google Patents
Schottky barrier semiconductor device and its manufactureInfo
- Publication number
- JPS5365671A JPS5365671A JP14165876A JP14165876A JPS5365671A JP S5365671 A JPS5365671 A JP S5365671A JP 14165876 A JP14165876 A JP 14165876A JP 14165876 A JP14165876 A JP 14165876A JP S5365671 A JPS5365671 A JP S5365671A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- schottky barrier
- shielding film
- barrier semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To decrease the backward leak current by providing a barrier metal which has no contact with a shielding film under the eaves part by utilizing positively the fact that an eaves part is produced to the shielding film through an under cutting of the semiconductor substrate on which the surface shielding film is formed if the substrate is etched partially.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14165876A JPS5931866B2 (en) | 1976-11-24 | 1976-11-24 | Method for manufacturing Schottky barrier semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14165876A JPS5931866B2 (en) | 1976-11-24 | 1976-11-24 | Method for manufacturing Schottky barrier semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5365671A true JPS5365671A (en) | 1978-06-12 |
JPS5931866B2 JPS5931866B2 (en) | 1984-08-04 |
Family
ID=15297153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14165876A Expired JPS5931866B2 (en) | 1976-11-24 | 1976-11-24 | Method for manufacturing Schottky barrier semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5931866B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56134780A (en) * | 1980-03-26 | 1981-10-21 | Sanyo Electric Co Ltd | Manufacture of beam lead type schottky diode |
WO2008057179A2 (en) * | 2006-11-07 | 2008-05-15 | Raytheon Company | Atomic layer deposition in the formation of gate structures for iii-v semiconductor |
-
1976
- 1976-11-24 JP JP14165876A patent/JPS5931866B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56134780A (en) * | 1980-03-26 | 1981-10-21 | Sanyo Electric Co Ltd | Manufacture of beam lead type schottky diode |
WO2008057179A2 (en) * | 2006-11-07 | 2008-05-15 | Raytheon Company | Atomic layer deposition in the formation of gate structures for iii-v semiconductor |
WO2008057179A3 (en) * | 2006-11-07 | 2008-07-31 | Raytheon Co | Atomic layer deposition in the formation of gate structures for iii-v semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPS5931866B2 (en) | 1984-08-04 |
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