JPS5365671A - Schottky barrier semiconductor device and its manufacture - Google Patents

Schottky barrier semiconductor device and its manufacture

Info

Publication number
JPS5365671A
JPS5365671A JP14165876A JP14165876A JPS5365671A JP S5365671 A JPS5365671 A JP S5365671A JP 14165876 A JP14165876 A JP 14165876A JP 14165876 A JP14165876 A JP 14165876A JP S5365671 A JPS5365671 A JP S5365671A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
schottky barrier
shielding film
barrier semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14165876A
Other languages
Japanese (ja)
Other versions
JPS5931866B2 (en
Inventor
Aiichiro Nara
Hisao Kondo
Masao Sumiyoshi
Hideaki Ikegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14165876A priority Critical patent/JPS5931866B2/en
Publication of JPS5365671A publication Critical patent/JPS5365671A/en
Publication of JPS5931866B2 publication Critical patent/JPS5931866B2/en
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To decrease the backward leak current by providing a barrier metal which has no contact with a shielding film under the eaves part by utilizing positively the fact that an eaves part is produced to the shielding film through an under cutting of the semiconductor substrate on which the surface shielding film is formed if the substrate is etched partially.
COPYRIGHT: (C)1978,JPO&Japio
JP14165876A 1976-11-24 1976-11-24 Method for manufacturing Schottky barrier semiconductor device Expired JPS5931866B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14165876A JPS5931866B2 (en) 1976-11-24 1976-11-24 Method for manufacturing Schottky barrier semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14165876A JPS5931866B2 (en) 1976-11-24 1976-11-24 Method for manufacturing Schottky barrier semiconductor device

Publications (2)

Publication Number Publication Date
JPS5365671A true JPS5365671A (en) 1978-06-12
JPS5931866B2 JPS5931866B2 (en) 1984-08-04

Family

ID=15297153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14165876A Expired JPS5931866B2 (en) 1976-11-24 1976-11-24 Method for manufacturing Schottky barrier semiconductor device

Country Status (1)

Country Link
JP (1) JPS5931866B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134780A (en) * 1980-03-26 1981-10-21 Sanyo Electric Co Ltd Manufacture of beam lead type schottky diode
WO2008057179A2 (en) * 2006-11-07 2008-05-15 Raytheon Company Atomic layer deposition in the formation of gate structures for iii-v semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134780A (en) * 1980-03-26 1981-10-21 Sanyo Electric Co Ltd Manufacture of beam lead type schottky diode
WO2008057179A2 (en) * 2006-11-07 2008-05-15 Raytheon Company Atomic layer deposition in the formation of gate structures for iii-v semiconductor
WO2008057179A3 (en) * 2006-11-07 2008-07-31 Raytheon Co Atomic layer deposition in the formation of gate structures for iii-v semiconductor

Also Published As

Publication number Publication date
JPS5931866B2 (en) 1984-08-04

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