JPS5329081A - Superhigh frequency semiconductor diode device - Google Patents

Superhigh frequency semiconductor diode device

Info

Publication number
JPS5329081A
JPS5329081A JP10330276A JP10330276A JPS5329081A JP S5329081 A JPS5329081 A JP S5329081A JP 10330276 A JP10330276 A JP 10330276A JP 10330276 A JP10330276 A JP 10330276A JP S5329081 A JPS5329081 A JP S5329081A
Authority
JP
Japan
Prior art keywords
diode device
semiconductor diode
frequency semiconductor
superhigh frequency
type substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10330276A
Other languages
Japanese (ja)
Inventor
Nobuhiko Fujine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10330276A priority Critical patent/JPS5329081A/en
Publication of JPS5329081A publication Critical patent/JPS5329081A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To produce the device for UHF by forming semiconductor elements on a semiinsulation type substrate , sealing the junction parts with a metal without increas ing parasitic reactance factors and using the semi-insulation type substrate as an interelectrode insulator for the elements.
COPYRIGHT: (C)1978,JPO&Japio
JP10330276A 1976-08-30 1976-08-30 Superhigh frequency semiconductor diode device Pending JPS5329081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10330276A JPS5329081A (en) 1976-08-30 1976-08-30 Superhigh frequency semiconductor diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10330276A JPS5329081A (en) 1976-08-30 1976-08-30 Superhigh frequency semiconductor diode device

Publications (1)

Publication Number Publication Date
JPS5329081A true JPS5329081A (en) 1978-03-17

Family

ID=14350439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10330276A Pending JPS5329081A (en) 1976-08-30 1976-08-30 Superhigh frequency semiconductor diode device

Country Status (1)

Country Link
JP (1) JPS5329081A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584993A (en) * 1981-06-25 1983-01-12 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド Millimeter wave integrated circuit and method of producing same
JP2001094122A (en) * 1999-09-20 2001-04-06 Oki Electric Ind Co Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584993A (en) * 1981-06-25 1983-01-12 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド Millimeter wave integrated circuit and method of producing same
JP2001094122A (en) * 1999-09-20 2001-04-06 Oki Electric Ind Co Ltd Semiconductor device
JP4587192B2 (en) * 1999-09-20 2010-11-24 Ｏｋｉセミコンダクタ株式会社 Semiconductor device

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