JPS546777A - Field effect type transistor - Google Patents

Field effect type transistor

Info

Publication number
JPS546777A
JPS546777A JP7244677A JP7244677A JPS546777A JP S546777 A JPS546777 A JP S546777A JP 7244677 A JP7244677 A JP 7244677A JP 7244677 A JP7244677 A JP 7244677A JP S546777 A JPS546777 A JP S546777A
Authority
JP
Japan
Prior art keywords
field effect
type transistor
effect type
alloyed
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7244677A
Other languages
Japanese (ja)
Inventor
Masaki Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7244677A priority Critical patent/JPS546777A/en
Publication of JPS546777A publication Critical patent/JPS546777A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a high-performance FET by forming the alloyed part which has an ohmic contact on n-type substrate and then producing the drain electrode containing a metal film part forming the Schottky barrier SB junction with the substrate on the alloyed part as well as on the substrate surface between the alloyed part and the gate electrode.
COPYRIGHT: (C)1979,JPO&Japio
JP7244677A 1977-06-17 1977-06-17 Field effect type transistor Pending JPS546777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7244677A JPS546777A (en) 1977-06-17 1977-06-17 Field effect type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7244677A JPS546777A (en) 1977-06-17 1977-06-17 Field effect type transistor

Publications (1)

Publication Number Publication Date
JPS546777A true JPS546777A (en) 1979-01-19

Family

ID=13489515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7244677A Pending JPS546777A (en) 1977-06-17 1977-06-17 Field effect type transistor

Country Status (1)

Country Link
JP (1) JPS546777A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532532A (en) * 1982-12-30 1985-07-30 International Business Machines Corporation Submicron conductor manufacturing
US4586071A (en) * 1984-05-11 1986-04-29 International Business Machines Corporation Heterostructure bipolar transistor
JPS61154080A (en) * 1984-07-06 1986-07-12 テキサス　インスツルメンツ　インコ−ポレイテツド Source structure of field effect transistor
JPS63173375A (en) * 1987-01-13 1988-07-16 Nec Corp Schottky junction type field-effect transistor
JPH03238831A (en) * 1990-02-15 1991-10-24 Nec Corp Compound semiconductor field effect transistor
JPH0549600U (en) * 1991-12-16 1993-06-29 川崎重工業株式会社 Shallow water double ender ship
JP2010278137A (en) * 2009-05-27 2010-12-09 Sharp Corp Semiconductor device
EP3201949A1 (en) * 2014-10-03 2017-08-09 Thales Field-effect transistor with optimised mixed drain contact and manufacturing method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532532A (en) * 1982-12-30 1985-07-30 International Business Machines Corporation Submicron conductor manufacturing
US4586071A (en) * 1984-05-11 1986-04-29 International Business Machines Corporation Heterostructure bipolar transistor
JPS61154080A (en) * 1984-07-06 1986-07-12 テキサス　インスツルメンツ　インコ−ポレイテツド Source structure of field effect transistor
US5321284A (en) * 1984-07-06 1994-06-14 Texas Instruments Incorporated High frequency FET structure
JPS63173375A (en) * 1987-01-13 1988-07-16 Nec Corp Schottky junction type field-effect transistor
JPH03238831A (en) * 1990-02-15 1991-10-24 Nec Corp Compound semiconductor field effect transistor
JPH0549600U (en) * 1991-12-16 1993-06-29 川崎重工業株式会社 Shallow water double ender ship
JP2010278137A (en) * 2009-05-27 2010-12-09 Sharp Corp Semiconductor device
EP3201949A1 (en) * 2014-10-03 2017-08-09 Thales Field-effect transistor with optimised mixed drain contact and manufacturing method

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