JPS546777A - Field effect type transistor - Google Patents
Field effect type transistorInfo
- Publication number
- JPS546777A JPS546777A JP7244677A JP7244677A JPS546777A JP S546777 A JPS546777 A JP S546777A JP 7244677 A JP7244677 A JP 7244677A JP 7244677 A JP7244677 A JP 7244677A JP S546777 A JPS546777 A JP S546777A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- type transistor
- effect type
- alloyed
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To obtain a high-performance FET by forming the alloyed part which has an ohmic contact on n-type substrate and then producing the drain electrode containing a metal film part forming the Schottky barrier SB junction with the substrate on the alloyed part as well as on the substrate surface between the alloyed part and the gate electrode.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7244677A JPS546777A (en) | 1977-06-17 | 1977-06-17 | Field effect type transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7244677A JPS546777A (en) | 1977-06-17 | 1977-06-17 | Field effect type transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS546777A true JPS546777A (en) | 1979-01-19 |
Family
ID=13489515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7244677A Pending JPS546777A (en) | 1977-06-17 | 1977-06-17 | Field effect type transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS546777A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4532532A (en) * | 1982-12-30 | 1985-07-30 | International Business Machines Corporation | Submicron conductor manufacturing |
US4586071A (en) * | 1984-05-11 | 1986-04-29 | International Business Machines Corporation | Heterostructure bipolar transistor |
JPS61154080A (en) * | 1984-07-06 | 1986-07-12 | テキサス インスツルメンツ インコ−ポレイテツド | Source structure of field effect transistor |
JPS63173375A (en) * | 1987-01-13 | 1988-07-16 | Nec Corp | Schottky junction type field-effect transistor |
JPH03238831A (en) * | 1990-02-15 | 1991-10-24 | Nec Corp | Compound semiconductor field effect transistor |
JPH0549600U (en) * | 1991-12-16 | 1993-06-29 | 川崎重工業株式会社 | Shallow water double ender ship |
JP2010278137A (en) * | 2009-05-27 | 2010-12-09 | Sharp Corp | Semiconductor device |
EP3201949A1 (en) * | 2014-10-03 | 2017-08-09 | Thales | Field-effect transistor with optimised mixed drain contact and manufacturing method |
-
1977
- 1977-06-17 JP JP7244677A patent/JPS546777A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4532532A (en) * | 1982-12-30 | 1985-07-30 | International Business Machines Corporation | Submicron conductor manufacturing |
US4586071A (en) * | 1984-05-11 | 1986-04-29 | International Business Machines Corporation | Heterostructure bipolar transistor |
JPS61154080A (en) * | 1984-07-06 | 1986-07-12 | テキサス インスツルメンツ インコ−ポレイテツド | Source structure of field effect transistor |
US5321284A (en) * | 1984-07-06 | 1994-06-14 | Texas Instruments Incorporated | High frequency FET structure |
JPS63173375A (en) * | 1987-01-13 | 1988-07-16 | Nec Corp | Schottky junction type field-effect transistor |
JPH03238831A (en) * | 1990-02-15 | 1991-10-24 | Nec Corp | Compound semiconductor field effect transistor |
JPH0549600U (en) * | 1991-12-16 | 1993-06-29 | 川崎重工業株式会社 | Shallow water double ender ship |
JP2010278137A (en) * | 2009-05-27 | 2010-12-09 | Sharp Corp | Semiconductor device |
EP3201949A1 (en) * | 2014-10-03 | 2017-08-09 | Thales | Field-effect transistor with optimised mixed drain contact and manufacturing method |
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