JPS5352059A - Electrode production of semiconductor unit - Google Patents

Electrode production of semiconductor unit

Info

Publication number
JPS5352059A
JPS5352059A JP12686476A JP12686476A JPS5352059A JP S5352059 A JPS5352059 A JP S5352059A JP 12686476 A JP12686476 A JP 12686476A JP 12686476 A JP12686476 A JP 12686476A JP S5352059 A JPS5352059 A JP S5352059A
Authority
JP
Japan
Prior art keywords
source
semiconductor unit
electrode production
gate
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12686476A
Other languages
Japanese (ja)
Other versions
JPS6124834B2 (en
Inventor
Masaoki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12686476A priority Critical patent/JPS5352059A/en
Publication of JPS5352059A publication Critical patent/JPS5352059A/en
Publication of JPS6124834B2 publication Critical patent/JPS6124834B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To form electrode arrangement with a high accuracy by determining the relation of mutual positions of a gate, source and drain in an asymmetric Schottky barrier gate type FET on the basis of angle variation of an electrode metal evaporating source to the faces - where the gate, source and drain are caused to adhere.
COPYRIGHT: (C)1978,JPO&Japio
JP12686476A 1976-10-22 1976-10-22 Electrode production of semiconductor unit Granted JPS5352059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12686476A JPS5352059A (en) 1976-10-22 1976-10-22 Electrode production of semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12686476A JPS5352059A (en) 1976-10-22 1976-10-22 Electrode production of semiconductor unit

Publications (2)

Publication Number Publication Date
JPS5352059A true JPS5352059A (en) 1978-05-12
JPS6124834B2 JPS6124834B2 (en) 1986-06-12

Family

ID=14945719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12686476A Granted JPS5352059A (en) 1976-10-22 1976-10-22 Electrode production of semiconductor unit

Country Status (1)

Country Link
JP (1) JPS5352059A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126976A (en) * 1980-03-11 1981-10-05 Matsushita Electronics Corp Field effect transistor
JP2012156516A (en) * 2012-03-02 2012-08-16 Toshiba Corp Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0528580Y2 (en) * 1985-05-22 1993-07-22

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126976A (en) * 1980-03-11 1981-10-05 Matsushita Electronics Corp Field effect transistor
JP2012156516A (en) * 2012-03-02 2012-08-16 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6124834B2 (en) 1986-06-12

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