JPS5352059A - Electrode production of semiconductor unit - Google Patents
Electrode production of semiconductor unitInfo
- Publication number
- JPS5352059A JPS5352059A JP12686476A JP12686476A JPS5352059A JP S5352059 A JPS5352059 A JP S5352059A JP 12686476 A JP12686476 A JP 12686476A JP 12686476 A JP12686476 A JP 12686476A JP S5352059 A JPS5352059 A JP S5352059A
- Authority
- JP
- Japan
- Prior art keywords
- source
- semiconductor unit
- electrode production
- gate
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To form electrode arrangement with a high accuracy by determining the relation of mutual positions of a gate, source and drain in an asymmetric Schottky barrier gate type FET on the basis of angle variation of an electrode metal evaporating source to the faces - where the gate, source and drain are caused to adhere.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12686476A JPS5352059A (en) | 1976-10-22 | 1976-10-22 | Electrode production of semiconductor unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12686476A JPS5352059A (en) | 1976-10-22 | 1976-10-22 | Electrode production of semiconductor unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5352059A true JPS5352059A (en) | 1978-05-12 |
JPS6124834B2 JPS6124834B2 (en) | 1986-06-12 |
Family
ID=14945719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12686476A Granted JPS5352059A (en) | 1976-10-22 | 1976-10-22 | Electrode production of semiconductor unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5352059A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56126976A (en) * | 1980-03-11 | 1981-10-05 | Matsushita Electronics Corp | Field effect transistor |
JP2012156516A (en) * | 2012-03-02 | 2012-08-16 | Toshiba Corp | Semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0528580Y2 (en) * | 1985-05-22 | 1993-07-22 |
-
1976
- 1976-10-22 JP JP12686476A patent/JPS5352059A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56126976A (en) * | 1980-03-11 | 1981-10-05 | Matsushita Electronics Corp | Field effect transistor |
JP2012156516A (en) * | 2012-03-02 | 2012-08-16 | Toshiba Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6124834B2 (en) | 1986-06-12 |
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