JPS53120282A - Electrode formation method for schottky barrier gate field effect transisto r - Google Patents

Electrode formation method for schottky barrier gate field effect transisto r

Info

Publication number
JPS53120282A
JPS53120282A JP3579577A JP3579577A JPS53120282A JP S53120282 A JPS53120282 A JP S53120282A JP 3579577 A JP3579577 A JP 3579577A JP 3579577 A JP3579577 A JP 3579577A JP S53120282 A JPS53120282 A JP S53120282A
Authority
JP
Japan
Prior art keywords
schottky barrier
field effect
barrier gate
formation method
electrode formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3579577A
Other languages
Japanese (ja)
Other versions
JPS6126236B2 (en
Inventor
Masaoki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3579577A priority Critical patent/JPS53120282A/en
Publication of JPS53120282A publication Critical patent/JPS53120282A/en
Publication of JPS6126236B2 publication Critical patent/JPS6126236B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a non-center gate SBC (Schottky barrier gate) FET in which the gates are countinued in parallel, by forming the mask dividing the source and drain regions into a triangle and evaporating the electrode metal with an angle of 30 degrees against the sample.
COPYRIGHT: (C)1978,JPO&Japio
JP3579577A 1977-03-29 1977-03-29 Electrode formation method for schottky barrier gate field effect transisto r Granted JPS53120282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3579577A JPS53120282A (en) 1977-03-29 1977-03-29 Electrode formation method for schottky barrier gate field effect transisto r

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3579577A JPS53120282A (en) 1977-03-29 1977-03-29 Electrode formation method for schottky barrier gate field effect transisto r

Publications (2)

Publication Number Publication Date
JPS53120282A true JPS53120282A (en) 1978-10-20
JPS6126236B2 JPS6126236B2 (en) 1986-06-19

Family

ID=12451847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3579577A Granted JPS53120282A (en) 1977-03-29 1977-03-29 Electrode formation method for schottky barrier gate field effect transisto r

Country Status (1)

Country Link
JP (1) JPS53120282A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS625670A (en) * 1985-07-02 1987-01-12 Sony Corp Field effect transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0388178U (en) * 1989-12-26 1991-09-09

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS625670A (en) * 1985-07-02 1987-01-12 Sony Corp Field effect transistor

Also Published As

Publication number Publication date
JPS6126236B2 (en) 1986-06-19

Similar Documents

Publication Publication Date Title
JPS5425171A (en) Manufacture of field effect semiconductor device
JPS5422781A (en) Insulator gate protective semiconductor device
JPS53980A (en) Field-effect transistor of high dielectric strength
JPS5267982A (en) Manufacture of schottky barrier type field effect transistor
JPS5365078A (en) Production of junction type field effect transistor
JPS53120282A (en) Electrode formation method for schottky barrier gate field effect transisto r
JPS53143177A (en) Production of field effect transistor
JPS5415681A (en) Manufacture of field effect transistor
JPS5384571A (en) Insulating gate type field effect transistor and its manufacture
JPS5352059A (en) Electrode production of semiconductor unit
JPS54884A (en) Manufacture of field effect transistor
JPS5257786A (en) Field effect transistor
JPS5245280A (en) Field effect transistor of schottky barrier type
JPS5364481A (en) Production of schottky type field effect transistor
JPS5718364A (en) Mis field-effect transistor
JPS5286779A (en) Semiconductor device
JPS53142881A (en) Manufacture for semiconductor device
JPS5426667A (en) Measuring method for various parameters of field effect transistor
JPS5212583A (en) Field effect transistor
JPS52100875A (en) Mos transistor
JPS5338272A (en) Production of schottky barrier gate type field effect transistor
JPS5310980A (en) Production of field effect transistor
JPS5279881A (en) Production of gaas schottky barrier gate type field effect transistor
JPS5369587A (en) Manufacture for semiconductor device
JPS5412566A (en) Production of semiconductor device