JPS53120282A - Electrode formation method for schottky barrier gate field effect transisto r - Google Patents
Electrode formation method for schottky barrier gate field effect transisto rInfo
- Publication number
- JPS53120282A JPS53120282A JP3579577A JP3579577A JPS53120282A JP S53120282 A JPS53120282 A JP S53120282A JP 3579577 A JP3579577 A JP 3579577A JP 3579577 A JP3579577 A JP 3579577A JP S53120282 A JPS53120282 A JP S53120282A
- Authority
- JP
- Japan
- Prior art keywords
- schottky barrier
- field effect
- barrier gate
- formation method
- electrode formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To obtain a non-center gate SBC (Schottky barrier gate) FET in which the gates are countinued in parallel, by forming the mask dividing the source and drain regions into a triangle and evaporating the electrode metal with an angle of 30 degrees against the sample.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3579577A JPS53120282A (en) | 1977-03-29 | 1977-03-29 | Electrode formation method for schottky barrier gate field effect transisto r |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3579577A JPS53120282A (en) | 1977-03-29 | 1977-03-29 | Electrode formation method for schottky barrier gate field effect transisto r |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53120282A true JPS53120282A (en) | 1978-10-20 |
JPS6126236B2 JPS6126236B2 (en) | 1986-06-19 |
Family
ID=12451847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3579577A Granted JPS53120282A (en) | 1977-03-29 | 1977-03-29 | Electrode formation method for schottky barrier gate field effect transisto r |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53120282A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS625670A (en) * | 1985-07-02 | 1987-01-12 | Sony Corp | Field effect transistor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0388178U (en) * | 1989-12-26 | 1991-09-09 |
-
1977
- 1977-03-29 JP JP3579577A patent/JPS53120282A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS625670A (en) * | 1985-07-02 | 1987-01-12 | Sony Corp | Field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS6126236B2 (en) | 1986-06-19 |
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