JPS53142881A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53142881A
JPS53142881A JP5828577A JP5828577A JPS53142881A JP S53142881 A JPS53142881 A JP S53142881A JP 5828577 A JP5828577 A JP 5828577A JP 5828577 A JP5828577 A JP 5828577A JP S53142881 A JPS53142881 A JP S53142881A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
drain
source
drawing electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5828577A
Other languages
Japanese (ja)
Other versions
JPS6013313B2 (en
Inventor
Kazuhiko Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP52058285A priority Critical patent/JPS6013313B2/en
Publication of JPS53142881A publication Critical patent/JPS53142881A/en
Publication of JPS6013313B2 publication Critical patent/JPS6013313B2/en
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain MOS type elements with high density, by shortening the distance between drawing electrodes and decreasing the areas of source and drain, through the formation of gate with self alignment method, after forming the source, drain and thier drawing electrodes.
COPYRIGHT: (C)1978,JPO&Japio
JP52058285A 1977-05-19 1977-05-19 Manufacturing method of semiconductor device Expired JPS6013313B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52058285A JPS6013313B2 (en) 1977-05-19 1977-05-19 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52058285A JPS6013313B2 (en) 1977-05-19 1977-05-19 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53142881A true JPS53142881A (en) 1978-12-12
JPS6013313B2 JPS6013313B2 (en) 1985-04-06

Family

ID=13079914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52058285A Expired JPS6013313B2 (en) 1977-05-19 1977-05-19 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6013313B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878425A (en) * 1981-11-04 1983-05-12 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor device
JPS58118158A (en) * 1981-12-30 1983-07-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming field effect transistor
JPS59148369A (en) * 1983-02-10 1984-08-25 シ−メンス，アクチエンゲゼルシヤフト Method of producing mos transistor
JPS6118177A (en) * 1984-07-04 1986-01-27 Matsushita Electronics Corp Mis-type semiconductor device and manufacture thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856381A (en) * 1971-11-18 1973-08-08
JPS4999281A (en) * 1973-01-25 1974-09-19
JPS5019379A (en) * 1973-05-16 1975-02-28
JPS5369587A (en) * 1976-12-03 1978-06-21 Fujitsu Ltd Manufacture for semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856381A (en) * 1971-11-18 1973-08-08
JPS4999281A (en) * 1973-01-25 1974-09-19
JPS5019379A (en) * 1973-05-16 1975-02-28
JPS5369587A (en) * 1976-12-03 1978-06-21 Fujitsu Ltd Manufacture for semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878425A (en) * 1981-11-04 1983-05-12 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor device
JPS58118158A (en) * 1981-12-30 1983-07-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming field effect transistor
JPH045265B2 (en) * 1981-12-30 1992-01-30
JPS59148369A (en) * 1983-02-10 1984-08-25 シ−メンス，アクチエンゲゼルシヤフト Method of producing mos transistor
JPS6118177A (en) * 1984-07-04 1986-01-27 Matsushita Electronics Corp Mis-type semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS6013313B2 (en) 1985-04-06

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