JPS53142881A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS53142881A JPS53142881A JP5828577A JP5828577A JPS53142881A JP S53142881 A JPS53142881 A JP S53142881A JP 5828577 A JP5828577 A JP 5828577A JP 5828577 A JP5828577 A JP 5828577A JP S53142881 A JPS53142881 A JP S53142881A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- drain
- source
- drawing electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain MOS type elements with high density, by shortening the distance between drawing electrodes and decreasing the areas of source and drain, through the formation of gate with self alignment method, after forming the source, drain and thier drawing electrodes.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52058285A JPS6013313B2 (en) | 1977-05-19 | 1977-05-19 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52058285A JPS6013313B2 (en) | 1977-05-19 | 1977-05-19 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53142881A true JPS53142881A (en) | 1978-12-12 |
JPS6013313B2 JPS6013313B2 (en) | 1985-04-06 |
Family
ID=13079914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52058285A Expired JPS6013313B2 (en) | 1977-05-19 | 1977-05-19 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6013313B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5878425A (en) * | 1981-11-04 | 1983-05-12 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of semiconductor device |
JPS58118158A (en) * | 1981-12-30 | 1983-07-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of forming field effect transistor |
JPS59148369A (en) * | 1983-02-10 | 1984-08-25 | シ−メンス,アクチエンゲゼルシヤフト | Method of producing mos transistor |
JPS6118177A (en) * | 1984-07-04 | 1986-01-27 | Matsushita Electronics Corp | Mis-type semiconductor device and manufacture thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4856381A (en) * | 1971-11-18 | 1973-08-08 | ||
JPS4999281A (en) * | 1973-01-25 | 1974-09-19 | ||
JPS5019379A (en) * | 1973-05-16 | 1975-02-28 | ||
JPS5369587A (en) * | 1976-12-03 | 1978-06-21 | Fujitsu Ltd | Manufacture for semiconductor device |
-
1977
- 1977-05-19 JP JP52058285A patent/JPS6013313B2/en not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4856381A (en) * | 1971-11-18 | 1973-08-08 | ||
JPS4999281A (en) * | 1973-01-25 | 1974-09-19 | ||
JPS5019379A (en) * | 1973-05-16 | 1975-02-28 | ||
JPS5369587A (en) * | 1976-12-03 | 1978-06-21 | Fujitsu Ltd | Manufacture for semiconductor device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5878425A (en) * | 1981-11-04 | 1983-05-12 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of semiconductor device |
JPS58118158A (en) * | 1981-12-30 | 1983-07-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of forming field effect transistor |
JPH045265B2 (en) * | 1981-12-30 | 1992-01-30 | ||
JPS59148369A (en) * | 1983-02-10 | 1984-08-25 | シ−メンス,アクチエンゲゼルシヤフト | Method of producing mos transistor |
JPS6118177A (en) * | 1984-07-04 | 1986-01-27 | Matsushita Electronics Corp | Mis-type semiconductor device and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS6013313B2 (en) | 1985-04-06 |
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