JPS51147974A - Method of manufacturing mos type semiconductor devices - Google Patents

Method of manufacturing mos type semiconductor devices

Info

Publication number
JPS51147974A
JPS51147974A JP7176975A JP7176975A JPS51147974A JP S51147974 A JPS51147974 A JP S51147974A JP 7176975 A JP7176975 A JP 7176975A JP 7176975 A JP7176975 A JP 7176975A JP S51147974 A JPS51147974 A JP S51147974A
Authority
JP
Japan
Prior art keywords
type semiconductor
semiconductor devices
mos type
manufacturing mos
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7176975A
Other languages
Japanese (ja)
Other versions
JPS6040194B2 (en
Inventor
Yoshiharu Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7176975A priority Critical patent/JPS6040194B2/en
Publication of JPS51147974A publication Critical patent/JPS51147974A/en
Publication of JPS6040194B2 publication Critical patent/JPS6040194B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: In MOSFET, self-matching the gate electrode with the source, drain and the guardling by the use of heat resistant metal to thereby eliminate the need of all of the joining clearance to reduce the size of the device and improve the integrating density.
COPYRIGHT: (C)1976,JPO&Japio
JP7176975A 1975-06-13 1975-06-13 Manufacturing method of semiconductor device Expired JPS6040194B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7176975A JPS6040194B2 (en) 1975-06-13 1975-06-13 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7176975A JPS6040194B2 (en) 1975-06-13 1975-06-13 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS51147974A true JPS51147974A (en) 1976-12-18
JPS6040194B2 JPS6040194B2 (en) 1985-09-10

Family

ID=13470079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7176975A Expired JPS6040194B2 (en) 1975-06-13 1975-06-13 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6040194B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360352A (en) * 1976-11-10 1978-05-30 Nippon Steel Corp Steel gas cutting method and device
JPS5529130A (en) * 1978-08-22 1980-03-01 Seiko Instr & Electronics Ltd Manufacturing of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360352A (en) * 1976-11-10 1978-05-30 Nippon Steel Corp Steel gas cutting method and device
JPS5752148B2 (en) * 1976-11-10 1982-11-05
JPS5529130A (en) * 1978-08-22 1980-03-01 Seiko Instr & Electronics Ltd Manufacturing of semiconductor device

Also Published As

Publication number Publication date
JPS6040194B2 (en) 1985-09-10

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