JPS5212583A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS5212583A JPS5212583A JP8897175A JP8897175A JPS5212583A JP S5212583 A JPS5212583 A JP S5212583A JP 8897175 A JP8897175 A JP 8897175A JP 8897175 A JP8897175 A JP 8897175A JP S5212583 A JPS5212583 A JP S5212583A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- fet
- shorten
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To provide the structure of FET, especially the shot key barrier gate FET, which is able to shorten the interval between source and drain.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50088971A JPS588590B2 (en) | 1975-07-18 | 1975-07-18 | Method for manufacturing Schottky barrier gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50088971A JPS588590B2 (en) | 1975-07-18 | 1975-07-18 | Method for manufacturing Schottky barrier gate field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5212583A true JPS5212583A (en) | 1977-01-31 |
JPS588590B2 JPS588590B2 (en) | 1983-02-16 |
Family
ID=13957688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50088971A Expired JPS588590B2 (en) | 1975-07-18 | 1975-07-18 | Method for manufacturing Schottky barrier gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS588590B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59194475A (en) * | 1983-04-18 | 1984-11-05 | Mitsubishi Electric Corp | Field effect transistor |
JPS59202670A (en) * | 1983-05-02 | 1984-11-16 | Toshiba Corp | Manufacture of semiconductor device |
JPH0249437A (en) * | 1989-03-18 | 1990-02-19 | Fujitsu Ltd | Manufacture of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4979183A (en) * | 1972-12-01 | 1974-07-31 | ||
JPS5012983A (en) * | 1973-05-28 | 1975-02-10 |
-
1975
- 1975-07-18 JP JP50088971A patent/JPS588590B2/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4979183A (en) * | 1972-12-01 | 1974-07-31 | ||
JPS5012983A (en) * | 1973-05-28 | 1975-02-10 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59194475A (en) * | 1983-04-18 | 1984-11-05 | Mitsubishi Electric Corp | Field effect transistor |
JPS59202670A (en) * | 1983-05-02 | 1984-11-16 | Toshiba Corp | Manufacture of semiconductor device |
JPH029451B2 (en) * | 1983-05-02 | 1990-03-02 | Tokyo Shibaura Electric Co | |
JPH0249437A (en) * | 1989-03-18 | 1990-02-19 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0515304B2 (en) * | 1989-03-18 | 1993-03-01 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS588590B2 (en) | 1983-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5222480A (en) | Insulating gate field effect transistor | |
JPS535581A (en) | Schottky gate type field effect transistor | |
JPS5425171A (en) | Manufacture of field effect semiconductor device | |
JPS5223277A (en) | Method of manufacteuring insulating gate type field effect transistor | |
JPS5267982A (en) | Manufacture of schottky barrier type field effect transistor | |
JPS5362985A (en) | Mis type field effect transistor and its production | |
JPS5212583A (en) | Field effect transistor | |
JPS5382179A (en) | Field effect transistor | |
JPS52137922A (en) | Solid photographing device | |
JPS51111042A (en) | Gate circuit | |
JPS5215274A (en) | Semiconductor device | |
JPS5223275A (en) | Field effect transistor and its manufacturing method | |
JPS5245280A (en) | Field effect transistor of schottky barrier type | |
JPS5384571A (en) | Insulating gate type field effect transistor and its manufacture | |
JPS53143177A (en) | Production of field effect transistor | |
JPS5263074A (en) | Insulated gate type field effect transistor and its production | |
JPS5439578A (en) | Field effect semiconductor device of isolation gate type | |
JPS5437584A (en) | Field effect semiconductor device of insulation gate type | |
JPS5230179A (en) | Junction-type electric field effective transistor | |
JPS5242080A (en) | Micro channel type insulated gate field effect transistor and process for productin thereof | |
JPS5410684A (en) | Using method of schottky gate type field effect transistors | |
JPS5296871A (en) | Manufacture of mos type transistor | |
JPS5282078A (en) | Production of mos transistor | |
JPS51147974A (en) | Method of manufacturing mos type semiconductor devices | |
JPS547881A (en) | Mos field effect transistor |