JPS5212583A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5212583A
JPS5212583A JP8897175A JP8897175A JPS5212583A JP S5212583 A JPS5212583 A JP S5212583A JP 8897175 A JP8897175 A JP 8897175A JP 8897175 A JP8897175 A JP 8897175A JP S5212583 A JPS5212583 A JP S5212583A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
fet
shorten
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8897175A
Other languages
Japanese (ja)
Other versions
JPS588590B2 (en
Inventor
Kiyoshi Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP50088971A priority Critical patent/JPS588590B2/en
Publication of JPS5212583A publication Critical patent/JPS5212583A/en
Publication of JPS588590B2 publication Critical patent/JPS588590B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To provide the structure of FET, especially the shot key barrier gate FET, which is able to shorten the interval between source and drain.
COPYRIGHT: (C)1977,JPO&Japio
JP50088971A 1975-07-18 1975-07-18 Method for manufacturing Schottky barrier gate field effect transistor Expired JPS588590B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50088971A JPS588590B2 (en) 1975-07-18 1975-07-18 Method for manufacturing Schottky barrier gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50088971A JPS588590B2 (en) 1975-07-18 1975-07-18 Method for manufacturing Schottky barrier gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS5212583A true JPS5212583A (en) 1977-01-31
JPS588590B2 JPS588590B2 (en) 1983-02-16

Family

ID=13957688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50088971A Expired JPS588590B2 (en) 1975-07-18 1975-07-18 Method for manufacturing Schottky barrier gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS588590B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194475A (en) * 1983-04-18 1984-11-05 Mitsubishi Electric Corp Field effect transistor
JPS59202670A (en) * 1983-05-02 1984-11-16 Toshiba Corp Manufacture of semiconductor device
JPH0249437A (en) * 1989-03-18 1990-02-19 Fujitsu Ltd Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979183A (en) * 1972-12-01 1974-07-31
JPS5012983A (en) * 1973-05-28 1975-02-10

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979183A (en) * 1972-12-01 1974-07-31
JPS5012983A (en) * 1973-05-28 1975-02-10

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194475A (en) * 1983-04-18 1984-11-05 Mitsubishi Electric Corp Field effect transistor
JPS59202670A (en) * 1983-05-02 1984-11-16 Toshiba Corp Manufacture of semiconductor device
JPH029451B2 (en) * 1983-05-02 1990-03-02 Tokyo Shibaura Electric Co
JPH0249437A (en) * 1989-03-18 1990-02-19 Fujitsu Ltd Manufacture of semiconductor device
JPH0515304B2 (en) * 1989-03-18 1993-03-01 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS588590B2 (en) 1983-02-16

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