JPS5230179A - Junction-type electric field effective transistor - Google Patents
Junction-type electric field effective transistorInfo
- Publication number
- JPS5230179A JPS5230179A JP10626175A JP10626175A JPS5230179A JP S5230179 A JPS5230179 A JP S5230179A JP 10626175 A JP10626175 A JP 10626175A JP 10626175 A JP10626175 A JP 10626175A JP S5230179 A JPS5230179 A JP S5230179A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- electric field
- type electric
- field effective
- effective transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: In JFET, to reduce low-frequency noise by providing a gate oarea of which surface has high impurity density and lower face has low impurity density.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10626175A JPS5230179A (en) | 1975-09-01 | 1975-09-01 | Junction-type electric field effective transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10626175A JPS5230179A (en) | 1975-09-01 | 1975-09-01 | Junction-type electric field effective transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5230179A true JPS5230179A (en) | 1977-03-07 |
Family
ID=14429144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10626175A Pending JPS5230179A (en) | 1975-09-01 | 1975-09-01 | Junction-type electric field effective transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5230179A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5435686A (en) * | 1977-08-25 | 1979-03-15 | Matsushita Electric Ind Co Ltd | Field effect semiconductor device of junction type |
JPS5471583A (en) * | 1977-11-17 | 1979-06-08 | Matsushita Electric Ind Co Ltd | Junction type field effect semiconductor device and production of the same |
JPS54150092A (en) * | 1978-05-17 | 1979-11-24 | Matsushita Electric Ind Co Ltd | Semiconductor device |
WO2010071084A1 (en) * | 2008-12-16 | 2010-06-24 | 住友電気工業株式会社 | Semiconductor device and manufacturing method therefor |
-
1975
- 1975-09-01 JP JP10626175A patent/JPS5230179A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5435686A (en) * | 1977-08-25 | 1979-03-15 | Matsushita Electric Ind Co Ltd | Field effect semiconductor device of junction type |
JPS5830742B2 (en) * | 1977-08-25 | 1983-07-01 | 松下電器産業株式会社 | Junction field effect semiconductor device |
JPS5471583A (en) * | 1977-11-17 | 1979-06-08 | Matsushita Electric Ind Co Ltd | Junction type field effect semiconductor device and production of the same |
JPS54150092A (en) * | 1978-05-17 | 1979-11-24 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JPS6222464B2 (en) * | 1978-05-17 | 1987-05-18 | Matsushita Electric Ind Co Ltd | |
WO2010071084A1 (en) * | 2008-12-16 | 2010-06-24 | 住友電気工業株式会社 | Semiconductor device and manufacturing method therefor |
JP2010166024A (en) * | 2008-12-16 | 2010-07-29 | Sumitomo Electric Ind Ltd | Semiconductor device, and method for manufacturing the same |
US8643065B2 (en) | 2008-12-16 | 2014-02-04 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for manufacturing the same |
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