JPS5230179A - Junction-type electric field effective transistor - Google Patents

Junction-type electric field effective transistor

Info

Publication number
JPS5230179A
JPS5230179A JP10626175A JP10626175A JPS5230179A JP S5230179 A JPS5230179 A JP S5230179A JP 10626175 A JP10626175 A JP 10626175A JP 10626175 A JP10626175 A JP 10626175A JP S5230179 A JPS5230179 A JP S5230179A
Authority
JP
Japan
Prior art keywords
junction
electric field
type electric
field effective
effective transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10626175A
Other languages
Japanese (ja)
Inventor
Satoru Shoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10626175A priority Critical patent/JPS5230179A/en
Publication of JPS5230179A publication Critical patent/JPS5230179A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: In JFET, to reduce low-frequency noise by providing a gate oarea of which surface has high impurity density and lower face has low impurity density.
COPYRIGHT: (C)1977,JPO&Japio
JP10626175A 1975-09-01 1975-09-01 Junction-type electric field effective transistor Pending JPS5230179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10626175A JPS5230179A (en) 1975-09-01 1975-09-01 Junction-type electric field effective transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10626175A JPS5230179A (en) 1975-09-01 1975-09-01 Junction-type electric field effective transistor

Publications (1)

Publication Number Publication Date
JPS5230179A true JPS5230179A (en) 1977-03-07

Family

ID=14429144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10626175A Pending JPS5230179A (en) 1975-09-01 1975-09-01 Junction-type electric field effective transistor

Country Status (1)

Country Link
JP (1) JPS5230179A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435686A (en) * 1977-08-25 1979-03-15 Matsushita Electric Ind Co Ltd Field effect semiconductor device of junction type
JPS5471583A (en) * 1977-11-17 1979-06-08 Matsushita Electric Ind Co Ltd Junction type field effect semiconductor device and production of the same
JPS54150092A (en) * 1978-05-17 1979-11-24 Matsushita Electric Ind Co Ltd Semiconductor device
WO2010071084A1 (en) * 2008-12-16 2010-06-24 住友電気工業株式会社 Semiconductor device and manufacturing method therefor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435686A (en) * 1977-08-25 1979-03-15 Matsushita Electric Ind Co Ltd Field effect semiconductor device of junction type
JPS5830742B2 (en) * 1977-08-25 1983-07-01 松下電器産業株式会社 Junction field effect semiconductor device
JPS5471583A (en) * 1977-11-17 1979-06-08 Matsushita Electric Ind Co Ltd Junction type field effect semiconductor device and production of the same
JPS54150092A (en) * 1978-05-17 1979-11-24 Matsushita Electric Ind Co Ltd Semiconductor device
JPS6222464B2 (en) * 1978-05-17 1987-05-18 Matsushita Electric Ind Co Ltd
WO2010071084A1 (en) * 2008-12-16 2010-06-24 住友電気工業株式会社 Semiconductor device and manufacturing method therefor
JP2010166024A (en) * 2008-12-16 2010-07-29 Sumitomo Electric Ind Ltd Semiconductor device, and method for manufacturing the same
US8643065B2 (en) 2008-12-16 2014-02-04 Sumitomo Electric Industries, Ltd. Semiconductor device and method for manufacturing the same

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