Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP15298275ApriorityCriticalpatent/JPS5275978A/en
Publication of JPS5275978ApublicationCriticalpatent/JPS5275978A/en
PURPOSE: To prevent the disconnection of source-drain electrode parts by performing impurity diffusion and softening treatment by the same heat treatment in an Si gate MOSFET.
COPYRIGHT: (C)1977,JPO&Japio
JP15298275A1975-12-221975-12-22Production of semiconductor device
PendingJPS5275978A
(en)