JPS53980A - Field-effect transistor of high dielectric strength - Google Patents
Field-effect transistor of high dielectric strengthInfo
- Publication number
- JPS53980A JPS53980A JP8296777A JP8296777A JPS53980A JP S53980 A JPS53980 A JP S53980A JP 8296777 A JP8296777 A JP 8296777A JP 8296777 A JP8296777 A JP 8296777A JP S53980 A JPS53980 A JP S53980A
- Authority
- JP
- Japan
- Prior art keywords
- high dielectric
- dielectric strength
- field
- effect transistor
- electode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To prepare the MOSFET of high dielectric strength by covering the upper portion of the surface of a substrate between a gate electrode and a drain layer with a shielded electode through a layer containing impurities at a low concentration.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8296777A JPS53980A (en) | 1977-07-13 | 1977-07-13 | Field-effect transistor of high dielectric strength |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8296777A JPS53980A (en) | 1977-07-13 | 1977-07-13 | Field-effect transistor of high dielectric strength |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1761774A Division JPS5435757B2 (en) | 1974-02-15 | 1974-02-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53980A true JPS53980A (en) | 1978-01-07 |
JPS5436465B2 JPS5436465B2 (en) | 1979-11-09 |
Family
ID=13788985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8296777A Granted JPS53980A (en) | 1977-07-13 | 1977-07-13 | Field-effect transistor of high dielectric strength |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53980A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5583269A (en) * | 1978-12-18 | 1980-06-23 | Xerox Corp | High voltage field effect transistor and method of fabricating same |
JPS55158675A (en) * | 1979-05-29 | 1980-12-10 | Xerox Corp | High piezooelectric mos field effect transistor |
JPS5619674A (en) * | 1979-05-30 | 1981-02-24 | Xerox Corp | High voltage metalloxideesemiconductor mos field effect transistor |
JPS5683077A (en) * | 1979-12-10 | 1981-07-07 | Sharp Corp | High tension mos field-effect transistor |
JPS5683076A (en) * | 1979-12-10 | 1981-07-07 | Sharp Corp | High tension mos field-effect transistor |
JPS56160071A (en) * | 1980-04-23 | 1981-12-09 | Nec Corp | Manufacture of insulated gate type field effect transistor |
JPS56160070A (en) * | 1980-04-23 | 1981-12-09 | Nec Corp | Manufacture of insulated gate type field effect transistor |
JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JPS56169369A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JPS582066A (en) * | 1981-06-26 | 1983-01-07 | Toshiba Corp | High withstand-voltage mos transistor |
JPS58180646U (en) * | 1982-05-26 | 1983-12-02 | シャープ株式会社 | field effect transistor |
US4959166A (en) * | 1987-05-30 | 1990-09-25 | Cosmo Oil Co., Ltd. | Fluid composition for use in viscous coupling |
AU622893B2 (en) * | 1988-03-29 | 1992-04-30 | Toray Silicone Co. Ltd. | Transparent flame-retardant silicone rubber compositions |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4844056A (en) * | 1971-10-08 | 1973-06-25 |
-
1977
- 1977-07-13 JP JP8296777A patent/JPS53980A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4844056A (en) * | 1971-10-08 | 1973-06-25 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5583269A (en) * | 1978-12-18 | 1980-06-23 | Xerox Corp | High voltage field effect transistor and method of fabricating same |
JPS55158675A (en) * | 1979-05-29 | 1980-12-10 | Xerox Corp | High piezooelectric mos field effect transistor |
JPS5619674A (en) * | 1979-05-30 | 1981-02-24 | Xerox Corp | High voltage metalloxideesemiconductor mos field effect transistor |
JPS6350872B2 (en) * | 1979-12-10 | 1988-10-12 | Sharp Kk | |
JPS5683076A (en) * | 1979-12-10 | 1981-07-07 | Sharp Corp | High tension mos field-effect transistor |
JPS6350871B2 (en) * | 1979-12-10 | 1988-10-12 | Sharp Kk | |
JPS5683077A (en) * | 1979-12-10 | 1981-07-07 | Sharp Corp | High tension mos field-effect transistor |
JPS56160071A (en) * | 1980-04-23 | 1981-12-09 | Nec Corp | Manufacture of insulated gate type field effect transistor |
JPS56160070A (en) * | 1980-04-23 | 1981-12-09 | Nec Corp | Manufacture of insulated gate type field effect transistor |
JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JPS56169369A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JPH0216021B2 (en) * | 1980-05-30 | 1990-04-13 | Sharp Kk | |
JPS582066A (en) * | 1981-06-26 | 1983-01-07 | Toshiba Corp | High withstand-voltage mos transistor |
JPS58180646U (en) * | 1982-05-26 | 1983-12-02 | シャープ株式会社 | field effect transistor |
US4959166A (en) * | 1987-05-30 | 1990-09-25 | Cosmo Oil Co., Ltd. | Fluid composition for use in viscous coupling |
AU622893B2 (en) * | 1988-03-29 | 1992-04-30 | Toray Silicone Co. Ltd. | Transparent flame-retardant silicone rubber compositions |
Also Published As
Publication number | Publication date |
---|---|
JPS5436465B2 (en) | 1979-11-09 |
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