JPS53980A - Field-effect transistor of high dielectric strength - Google Patents

Field-effect transistor of high dielectric strength

Info

Publication number
JPS53980A
JPS53980A JP8296777A JP8296777A JPS53980A JP S53980 A JPS53980 A JP S53980A JP 8296777 A JP8296777 A JP 8296777A JP 8296777 A JP8296777 A JP 8296777A JP S53980 A JPS53980 A JP S53980A
Authority
JP
Japan
Prior art keywords
high dielectric
dielectric strength
field
effect transistor
electode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8296777A
Other languages
Japanese (ja)
Other versions
JPS5436465B2 (en
Inventor
Isao Yoshida
Seiji Kubo
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8296777A priority Critical patent/JPS53980A/en
Publication of JPS53980A publication Critical patent/JPS53980A/en
Publication of JPS5436465B2 publication Critical patent/JPS5436465B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To prepare the MOSFET of high dielectric strength by covering the upper portion of the surface of a substrate between a gate electrode and a drain layer with a shielded electode through a layer containing impurities at a low concentration.
COPYRIGHT: (C)1978,JPO&Japio
JP8296777A 1977-07-13 1977-07-13 Field-effect transistor of high dielectric strength Granted JPS53980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8296777A JPS53980A (en) 1977-07-13 1977-07-13 Field-effect transistor of high dielectric strength

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8296777A JPS53980A (en) 1977-07-13 1977-07-13 Field-effect transistor of high dielectric strength

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1761774A Division JPS5435757B2 (en) 1974-02-15 1974-02-15

Publications (2)

Publication Number Publication Date
JPS53980A true JPS53980A (en) 1978-01-07
JPS5436465B2 JPS5436465B2 (en) 1979-11-09

Family

ID=13788985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8296777A Granted JPS53980A (en) 1977-07-13 1977-07-13 Field-effect transistor of high dielectric strength

Country Status (1)

Country Link
JP (1) JPS53980A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583269A (en) * 1978-12-18 1980-06-23 Xerox Corp High voltage field effect transistor and method of fabricating same
JPS55158675A (en) * 1979-05-29 1980-12-10 Xerox Corp High piezooelectric mos field effect transistor
JPS5619674A (en) * 1979-05-30 1981-02-24 Xerox Corp High voltage metalloxideesemiconductor mos field effect transistor
JPS5683077A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS5683076A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS56160071A (en) * 1980-04-23 1981-12-09 Nec Corp Manufacture of insulated gate type field effect transistor
JPS56160070A (en) * 1980-04-23 1981-12-09 Nec Corp Manufacture of insulated gate type field effect transistor
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS582066A (en) * 1981-06-26 1983-01-07 Toshiba Corp High withstand-voltage mos transistor
JPS58180646U (en) * 1982-05-26 1983-12-02 シャープ株式会社 field effect transistor
US4959166A (en) * 1987-05-30 1990-09-25 Cosmo Oil Co., Ltd. Fluid composition for use in viscous coupling
AU622893B2 (en) * 1988-03-29 1992-04-30 Toray Silicone Co. Ltd. Transparent flame-retardant silicone rubber compositions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844056A (en) * 1971-10-08 1973-06-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844056A (en) * 1971-10-08 1973-06-25

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583269A (en) * 1978-12-18 1980-06-23 Xerox Corp High voltage field effect transistor and method of fabricating same
JPS55158675A (en) * 1979-05-29 1980-12-10 Xerox Corp High piezooelectric mos field effect transistor
JPS5619674A (en) * 1979-05-30 1981-02-24 Xerox Corp High voltage metalloxideesemiconductor mos field effect transistor
JPS6350872B2 (en) * 1979-12-10 1988-10-12 Sharp Kk
JPS5683076A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS6350871B2 (en) * 1979-12-10 1988-10-12 Sharp Kk
JPS5683077A (en) * 1979-12-10 1981-07-07 Sharp Corp High tension mos field-effect transistor
JPS56160071A (en) * 1980-04-23 1981-12-09 Nec Corp Manufacture of insulated gate type field effect transistor
JPS56160070A (en) * 1980-04-23 1981-12-09 Nec Corp Manufacture of insulated gate type field effect transistor
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPH0216021B2 (en) * 1980-05-30 1990-04-13 Sharp Kk
JPS582066A (en) * 1981-06-26 1983-01-07 Toshiba Corp High withstand-voltage mos transistor
JPS58180646U (en) * 1982-05-26 1983-12-02 シャープ株式会社 field effect transistor
US4959166A (en) * 1987-05-30 1990-09-25 Cosmo Oil Co., Ltd. Fluid composition for use in viscous coupling
AU622893B2 (en) * 1988-03-29 1992-04-30 Toray Silicone Co. Ltd. Transparent flame-retardant silicone rubber compositions

Also Published As

Publication number Publication date
JPS5436465B2 (en) 1979-11-09

Similar Documents

Publication Publication Date Title
JPS5368581A (en) Semiconductor device
JPS53980A (en) Field-effect transistor of high dielectric strength
JPS5422781A (en) Insulator gate protective semiconductor device
JPS5382179A (en) Field effect transistor
JPS53141585A (en) Manufacture of insulating gate field effect type semiconductor device
JPS53126875A (en) Gate protecting device
JPS5366179A (en) Semiconductor device
JPS5772386A (en) Junction type field-effect semiconductor device
JPS547881A (en) Mos field effect transistor
JPS5220769A (en) Longitudinal semi-conductor unit
JPS5286086A (en) Field effect transistor
JPS52108777A (en) Field-effect transistor for schottky barrier layer
JPS53125778A (en) Semiconductor device
JPS54121681A (en) Nis-type semiconductor device
JPS55108773A (en) Insulating gate type field effect transistor
JPS52136583A (en) Mos type semiconductor device
JPS5371573A (en) Field effect transistor of isolating gate type
JPS5367373A (en) Semiconductor device
JPS51116682A (en) Field effect transistor of high dielectric strength
JPS5424583A (en) Mos field effect transistor
JPS5421180A (en) Semiconductor device
JPS52100878A (en) Field effect transistor
JPS5364480A (en) Field effect semiconductor device
JPS5376770A (en) Production of insulated gate field effect transistor
JPS52141581A (en) Mos type semiconductor device 7 its manufacture