JPS5436465B2 - - Google Patents
Info
- Publication number
- JPS5436465B2 JPS5436465B2 JP8296777A JP8296777A JPS5436465B2 JP S5436465 B2 JPS5436465 B2 JP S5436465B2 JP 8296777 A JP8296777 A JP 8296777A JP 8296777 A JP8296777 A JP 8296777A JP S5436465 B2 JPS5436465 B2 JP S5436465B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8296777A JPS53980A (en) | 1977-07-13 | 1977-07-13 | Field-effect transistor of high dielectric strength |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8296777A JPS53980A (en) | 1977-07-13 | 1977-07-13 | Field-effect transistor of high dielectric strength |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1761774A Division JPS5435757B2 (en) | 1974-02-15 | 1974-02-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53980A JPS53980A (en) | 1978-01-07 |
| JPS5436465B2 true JPS5436465B2 (en) | 1979-11-09 |
Family
ID=13788985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8296777A Granted JPS53980A (en) | 1977-07-13 | 1977-07-13 | Field-effect transistor of high dielectric strength |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53980A (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4308549A (en) * | 1978-12-18 | 1981-12-29 | Xerox Corporation | High voltage field effect transistor |
| US4288806A (en) * | 1979-05-29 | 1981-09-08 | Xerox Corporation | High voltage MOSFET with overlapping electrode structure |
| US4288801A (en) * | 1979-05-30 | 1981-09-08 | Xerox Corporation | Monolithic HVMOSFET active switch array |
| JPS5683076A (en) * | 1979-12-10 | 1981-07-07 | Sharp Corp | High tension mos field-effect transistor |
| JPS5683077A (en) * | 1979-12-10 | 1981-07-07 | Sharp Corp | High tension mos field-effect transistor |
| JPS56160071A (en) * | 1980-04-23 | 1981-12-09 | Nec Corp | Manufacture of insulated gate type field effect transistor |
| JPS56160070A (en) * | 1980-04-23 | 1981-12-09 | Nec Corp | Manufacture of insulated gate type field effect transistor |
| JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
| JPS56169369A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
| JPS582066A (en) * | 1981-06-26 | 1983-01-07 | Toshiba Corp | High withstand-voltage mos transistor |
| JPS58180646U (en) * | 1982-05-26 | 1983-12-02 | シャープ株式会社 | field effect transistor |
| JPH0631389B2 (en) * | 1987-05-30 | 1994-04-27 | コスモ石油株式会社 | Fluid composition for viscous coupling |
| JP2838208B2 (en) * | 1988-03-29 | 1998-12-16 | 東レ・ダウコーニング・シリコーン株式会社 | Transparent flame-retardant silicone rubber composition |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4844056A (en) * | 1971-10-08 | 1973-06-25 |
-
1977
- 1977-07-13 JP JP8296777A patent/JPS53980A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4844056A (en) * | 1971-10-08 | 1973-06-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53980A (en) | 1978-01-07 |